Abstract: A method, apparatus and computer program product are provided for implementing application specific integrated circuit (ASIC) designs having high performance and reduced leakage current. Standard voltage threshold (SVT) circuits in a SVT circuit library are identified. For each SVT circuit, each SVT PFET is replaced with a low voltage threshold (LVT) PFET to provide a hybrid alternate voltage threshold (AVT) circuit. Then the AVT circuits are saved in an alternate voltage threshold circuit library. The AVT circuit library provides enhanced performance as compared to the SVT circuit library without the high leakage current resulting from a LVT circuit library.

Abstract: A decoupling capacitor includes a fixed resistance in series with the capacitor, the resistance formed by contacts connecting a polysilicon layer to metal and a diffusion layer to metal; the contacts being of location and quantity sufficient for limiting defect current while allowing the capacitor to function at high frequency. N pairs of contacts in at least two sets of contacts are separated by a distance K sufficient to achieve a leakage limiting resistance of R and a bandwidth limiting resistance of R/2.

Abstract: A method for reducing the amount of mercury affixed to a sorbent and/or fly ash is disclosed. The method includes the steps of providing an amount of sorbent and/or fly ash wherein at least a portion of the amount of sorbent and/or fly ash has particulates having mercury compounds affixed to the particulates; and exposing the amount of sorbent and/or fly ash to heated flowing air until mercury compounds are liberated from at least some of the particulates. Preferably, the amount of sorbent and/or fly ash is maintained in the heated flowing air until the sorbent reaches a temperature of at least 700° F. (372° C.). When the sorbent is activated carbon, it is preferred that the amount of sorbent and/or fly ash is maintained in the heated flowing air until the activated carbon reaches a temperature in the range of 700° F. (372° C.) to 1000° F. (538° C.).