Abstract: An apparatus and method for hydrogenating a sample, such as a semiconductor wafer. The invention utilizes a top electrode comprising a UV-transparent dielectric and a metal contact to provide an electric field to the sample while the sample is irradiated with UV light and hydrogenated with a hydrogenating gas or gasses. The field may be applied to the sample at a number of different pressures, temperatures and concentrations of gas to manipulate the rate and type of hydrogenation. Further, the method of hydrogenating the sample may be used in conjunction with masking and etching techniques.

Abstract: An apparatus and method for hydrogenating a sample, such as a semiconductor wafer. The invention utilizes a top electrode comprising a UV-transparent dielectric and a metal contact to provide an electric field to the sample while the sample is irradiated with UV light and hydrogenated with a hydrogenating gas or gasses. The field may be applied to the sample at a number of different pressures, temperatures and concentrations of gas to manipulate the rate and type of hydrogenation. Further, the method of hydrogenating the sample may be used in conjunction with masking and etching techniques.

Abstract: An apparatus and method for improving the electrical conductivity of a thermoelectric material, particularly a material comprising polysilicon nanowires. The method comprises hydrogenation of the device to improve the electrical conductivity of the device with negligible change to the thermal conductivity. Hydrogenation of the thermoelectric device may be accomplished using several techniques, including UV-assisted hydrogenation in a vacuum chamber.

Abstract: Apparatus and method are provided for hydrogenating semiconductor or other materials by ultraviolet (UV) radiation in the presence of hydrogen. Hydrogen uptake may be optimized by selection of temperature and wavelength of the UV radiation. Patterned areas may be selectively hydrogenated, such as mesas in Avalanche Photodiode Arrays.

Abstract: Apparatus and method to improve the operating parameters of HgCdTe-based optoelectric devices by the addition of hydrogen to passivate dislocation defects. A chamber and a UV light source are provided. The UV light source is configured to provide UV radiation within the chamber. The optoelectric device, which may comprise a HgCdTe semiconductor, is placed into the chamber and may be held in position by a sample holder. Hydrogen gas is introduced into the chamber. The material is irradiated within the chamber by the UV light source with the device and hydrogen gas present within the chamber to cause absorption of the hydrogen into the material.

Abstract: A method is provided for measuring defects in semiconductor materials. In one embodiment the method includes placing deuterium in the material and directing an ion beam onto the material to cause a nuclear reaction with the deuterium. Products of the nuclear reaction are analyzed (NRA) to measure the concentration of defects. In other embodiments, a spectroscopic technique is used to detect the deuterium taggant. Lattice defect or total defect occurrences can be selected by selecting the method of placing deuterium in the sample. Defect concentration vs. depth below the surface of material can be determined by varying the energy of the ion beam or by measuring energy profiles of products of the nuclear reaction. The method may be applied to wafers, pixels or other forms of semiconductor materials and may be combined with X-ray analysis of elements on the material.

Abstract: Apparatus and method are provided for hydrogenating semiconductor or other materials by ultraviolet (UV) radiation in the presence of hydrogen. Hydrogen uptake may be optimized by selection of temperature and wavelength of the UV radiation. Patterned areas may be selectively hydrogenated, such as mesas in Avalanche Photodiode Arrays.

Abstract: The present invention provides for the fabrication of single layer semimetal/semiconductor heterostructures and multilayer semimetal/semiconductor structures. Each semimetal/semiconductor layer fabricated in accordance with the present invention has compatible crystal symmetry across the heterojunction between a semimetal and a semiconductor. A single layer semimetal/semiconductor structure is fabricated by growing a rhombohedral semimetal in a ?111! direction on a substrate material having a (111) orientation, and then growing a zincblende semiconductor in a ?111! direction on the semimetal. A multilayer semimetal/semiconductor structure may be grown from the single layer semimetal/semiconductor structure by growing an additional rhombohedral semimetal layer in a ?111! direction on the preceding semiconductor grown, then growing an additional zincblende semiconductor layer in a ?111!direction on the additional semimetal layer, and then repeating this process as many times as desired.

Abstract: The present invention relates to novel optical devices operating in the infrared, based on indirect narrow-gap superlattices (INGS) as the active optical materials. The novel optical devices include (1) wideband all-optical switches, which combine small insertion loss at low light intensities with efficient optical switching and optical limiting at high intensities, and (2) wideband infrared detectors with high collection efficiency and low tunneling noise currents, suitable for use in longwave infrared focal plane arrays. INGS comprise multiple semimetal/semiconductor layers having compatible crystal symmetry across each heterojunction between a given semimetal and the adjoining semiconductor, wherein each semimetal layer sandwiched between semiconductor layers is grown thin enough that each semimetal layer becomes a semiconductor, and wherein each semiconductor layer is thin enough that there is coupling between adjacent semiconductor layers.

Abstract: The present invention provides for the fabrication of single layer semimetal/semiconductor heterostructures and multilayer semimetal/semiconductor structures. Each semimetal/semiconductor layer fabricated in accordance with the present invention has compatible crystal symmetry across the heterojunction between a semimetal and a semiconductor. A single layer semimetal/semiconductor structure is fabricated by growing a rhombohedral semimetal in a [111] direction on a substrate material having a (111) orientation, and then growing a zincblende semiconductor in a [111] direction on the semimetal. A multilayer semimetal/semiconductor structure may be grown from the single layer semimetal/semiconductor structure by growing an additional rhombohedral semimetal layer in a [111] direction on the preceding semiconductor grown, then growing an additional zincblende semiconductor layer in a [111] direction on the additional semimetal layer, and then repeating this process as many times as desired.

Abstract: A physical configuration for a parallel multi-junction superconducting quantum interference device that can be used for a variety of applications involving the detection of magnetic flux, including applications where it is desired to measure the absolute magnitude of the flux. The device of this invention features a novel geometry for a multi-junction interference device which significantly enhances the flux-to-voltage transfer function, thereby yielding a significant improvement in the device sensitivity in its use in a magnetometer, gradiometer, or other applications.