Patents by Inventor Terry G. Athanas

Terry G. Athanas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making a semiconductor device
    Patent number: 4219379
    Abstract: A method for making a semiconductor device is described in which polycrystalline silicon is vacuum deposited and then converted to silicon dioxide thereby providing a number of advantages over direct deposition of silicon dioxide. The method has particular applicability to isoplanar MOSFET integrated circuit manufacturing.
    Type: Grant
    Filed: September 25, 1978
    Date of Patent: August 26, 1980
    Assignee: Mostek Corporation
    Inventor: Terry G. Athanas
  • Method of stabilizing semiconductor device by converting doped poly-Si to polyoxides
    Patent number: 4179311
    Abstract: A method for making a semiconductor device is described in which polycrystalline silicon is vacuum deposited and then converted to silicon dioxide thereby providing a number of advantages over direct deposition of silicon dioxide. The method has particular applicability to isoplanar MOSFET integrated circuit manufacturing.
    Type: Grant
    Filed: September 25, 1978
    Date of Patent: December 18, 1979
    Assignee: Mostek Corporation
    Inventor: Terry G. Athanas