Abstract: Novel tools and techniques are provided for implementing item or luggage loss prevention, which, in some cases, is based on weight measurement. In some embodiments, a device with a processor can be placed under a bag's handle, within an interior compartment of the bag, below or in the feet or wheels of the bag, and/or the like. The device can allow a user to lock in a weight of the bag. If any item is subsequently removed from (and not returned to) the bag, the device will notify the user, using one or more of audio notification, visual notification, and/or mobile device notification (e.g., via e-mail, text message, SMS, MMS, chat message, and/or the like) that the weight of the bag has changed. In some cases, location detection devices may be implemented to allow the user to backtrack where the missing item might have been left behind.

Abstract: Novel tools and techniques are provided for implementing item or luggage loss prevention, which, in some cases, is based on weight measurement. In some embodiments, a device with a processor can be placed under a bag's handle, within an interior compartment of the bag, below or in the feet or wheels of the bag, and/or the like. The device can allow a user to lock in a weight of the bag. If any item is subsequently removed from (and not returned to) the bag, the device will notify the user, using one or more of audio notification, visual notification, and/or mobile device notification (e.g., via e-mail, text message, SMS, MMS, chat message, and/or the like) that the weight of the bag has changed. In some cases, location detection devices may be implemented to allow the user to backtrack where the missing item might have been left behind.

Abstract: Novel tools and techniques are provided for implementing item or luggage loss prevention, which, in some cases, is based on weight measurement. In some embodiments, a device with a processor can be placed under a bag's handle, within an interior compartment of the bag, below or in the feet or wheels of the bag, and/or the like. The device can allow a user to lock in a weight of the bag. If any item is subsequently removed from (and not returned to) the bag, the device will notify the user, using one or more of audio notification, visual notification, and/or mobile device notification (e.g., via e-mail, text message, SMS, MMS, chat message, and/or the like) that the weight of the bag has changed. In some cases, location detection devices may be implemented to allow the user to backtrack where the missing item might have been left behind.

Abstract: Novel tools and techniques are provided for implementing item or luggage loss prevention, which, in some cases, is based on weight measurement. In some embodiments, a device with a processor can be placed under a bag's handle, within an interior compartment of the bag, below or in the feet or wheels of the bag, and/or the like. The device can allow a user to lock in a weight of the bag. If any item is subsequently removed from (and not returned to) the bag, the device will notify the user, using one or more of audio notification, visual notification, and/or mobile device notification (e.g., via e-mail, text message, SMS, MMS, chat message, and/or the like) that the weight of the bag has changed. In some cases, location detection devices may be implemented to allow the user to backtrack where the missing item might have been left behind.

Abstract: A semiconductor magnetic memory device has a magnetic tunneling junction formed over a memory cell. The memory cell has a control gate surrounded by a floating gate. The floating gate is coupled to the magnetic tunneling junction through a pinning layer that maintains the magnetic orientation of the lower magnetic layer of the junction. A current through a selected word line, coupled to the control gate, generates a first magnetic field. A current through a cell select line generates a second magnetic field that is orthogonal to the first magnetic field. This changes the magnetic orientation of the upper magnetic layer of the junction to lower its resistance, thus allowing a write/erase voltage on a program/erase line to program/erase the floating gate.

Abstract: A semiconductor magnetic memory device has a magnetic tunneling junction formed over a memory cell. The memory cell has a control gate surrounded by a floating gate. The floating gate is coupled to the magnetic tunneling junction through a pinning layer that maintains the magnetic orientation of the lower magnetic layer of the junction. A current through a selected word line, coupled to the control gate, generates a first magnetic field. A current through a cell select line generates a second magnetic field that is orthogonal to the first magnetic field. This changes the magnetic orientation of the upper magnetic layer of the junction to lower its resistance, thus allowing a write/erase voltage on a program/erase line to program/erase the floating gate.

Abstract: A semiconductor magnetic memory device has a magnetic tunneling junction formed over a memory cell. The memory cell has a control gate surrounded by a floating gate. The floating gate is coupled to the magnetic tunneling junction through a pinning layer that maintains the magnetic orientation of the lower magnetic layer of the junction. A current through a selected word line, coupled to the control gate, generates a first magnetic field. A current through a cell select line generates a second magnetic field that is orthogonal to the first magnetic field. This changes the magnetic orientation of the upper magnetic layer of the junction to lower its resistance, thus allowing a write/erase voltage on a program/erase line to program/erase the floating gate.

Abstract: A semiconductor magnetic memory device has a magnetic tunneling junction formed over a memory cell. The memory cell has a control gate surrounded by a floating gate. The floating gate is coupled to the magnetic tunneling junction through a pinning layer that maintains the magnetic orientation of the lower magnetic layer of the junction. A current through a selected word line, coupled to the control gate, generates a first magnetic field. A current through a cell select line generates a second magnetic field that is orthogonal to the first magnetic field. This changes the magnetic orientation of the upper magnetic layer of the junction to lower its resistance, thus allowing a write/erase voltage on a program/erase line to program/erase the floating gate.

Abstract: A semiconductor magnetic memory device has a magnetic tunneling junction formed over a memory cell. The memory cell has a control gate surrounded by a floating gate. The floating gate is coupled to the magnetic tunneling junction through a pinning layer that maintains the magnetic orientation of the lower magnetic layer of the junction. A current through a selected word line, coupled to the control gate, generates a first magnetic field. A current through a cell select line generates a second magnetic field that is orthogonal to the first magnetic field. This changes the magnetic orientation of the upper magnetic layer of the junction to lower its resistance, thus allowing a write/erase voltage on a program/erase line to program/erase the floating gate.

Abstract: A semiconductor magnetic memory device has a magnetic tunneling junction formed over a memory cell. The memory cell has a control gate surrounded by a floating gate. The floating gate is coupled to the magnetic tunneling junction through a pinning layer that maintains the magnetic orientation of the lower magnetic layer of the junction. A current through a selected word line, coupled to the control gate, generates a first magnetic field. A current through a cell select line generates a second magnetic field that is orthogonal to the first magnetic field. This changes the magnetic orientation of the upper magnetic layer of the junction to lower its resistance, thus allowing a write/erase voltage on a program/erase line to program/erase the floating gate.

Abstract: A method and apparatus are disclosed for inhibiting diffusion of mobile atoms from an antiferromagnetic layer toward a tunnel oxide layer and through a ferromagnetic layer which is pinned by the antiferromagnetic layer. Diffusion of the mobile atoms is inhibited by an oxide layer provided between the anti-ferromagnetic layer and the ferromagnetic layer. Alternatively, the ferromagnetic layer can have boron atoms located on or in the layer to fill interstices.

Abstract: A semiconductor magnetic memory device has a magnetic tunneling junction formed over a memory cell. The memory cell has a control gate surrounded by a floating gate. The floating gate is coupled to the magnetic tunneling junction through a pinning layer that maintains the magnetic orientation of the lower magnetic layer of the junction. A current through a selected word line, coupled to the control gate, generates a first magnetic field. A current through a cell select line generates a second magnetic field that is orthogonal to the first magnetic field. This changes the magnetic orientation of the upper magnetic layer of the junction to lower its resistance, thus allowing a write/erase voltage on a program/erase line to program/erase the floating gate.

Abstract: A method and apparatus are disclosed for inhibiting diffusion of mobile atoms from an antiferromagnetic layer toward a tunnel oxide layer and through a ferromagnetic layer which is pinned by the antiferromagnetic layer. Diffusion of the mobile atoms is inhibited by an oxide layer provided between the anti-ferromagnetic layer and the ferromagnetic layer. Alternatively, the ferromagnetic layer can have boron atoms located on or in the layer to fill interstices.

Abstract: A method and apparatus are disclosed for inhibiting diffusion of mobile atoms from an antiferromagnetic layer toward a tunnel oxide layer and through a ferromagnetic layer which is pinned by the antiferromagnetic layer. Diffusion of the mobile atoms is inhibited by an oxide layer provided between the anti-ferromagnetic layer and the ferromagnetic layer. Alternatively, the ferromagnetic layer can have boron atoms located on or in the layer to fill interstices.

Abstract: A method and apparatus are disclosed for inhibiting diffusion of mobile atoms from an antiferromagnetic layer toward a tunnel oxide layer and through a ferromagnetic layer which is pinned by the antiferromagnetic layer. Diffusion of the mobile atoms is inhibited by an oxide layer provided between the anti-ferromagnetic layer and the ferromagnetic layer. Alternatively, the ferromagnetic layer can have boron atoms located on or in the layer to fill interstices.