Abstract: A cellulose based substrate (20) generally includes a cellulose based sheet having a corrugated medium (48) spanning between first and second linerboards (44 and 46), wherein the corrugated medium includes at least one sizing agent for moisture wicking resistance. The cellulose based substrate further includes a polymeric film (43) encapsulating at least a portion of the cellulose based sheet.

Abstract: A sheet of cellulose based material having enhanced strength, particularly the dry strength, substantially unaffected repulpability is disclosed. The sheet of cellulose based materials generally includes a first cellulose based material connected with a second cellulose base material element. The first cellulose based material is formed by separating a portion of the fiber from a furnish, treating the separated portion with a cationic wet strength resin which is allowed to bond to the fiber. The treated fiber is them mixed with the untreated balance of the fiber at some point before the paper machine. The fiber that is separated may be secondary fiber, virgin fiber or combinations thereof. The second cellulose base material element is substantially free from any treatment. The second cellulose base material element may be include substantially all untreated fibers.

Abstract: The present invention provides an absorbent composite having improved surface dryness. The composite has three strata with adjacent strata separated by a transition zone. The composite's first stratum includes synthetic fibers and provides the composite with improved surface dryness. Methods for forming the composite and absorbent articles that incorporated the composite are also provided.

Abstract: A fibrous layer that includes a refined blend of crosslinked cellulosic fibers and noncrosslinked cellulosic fibers. In one embodiment, the layer includes about 85 percent by weight crosslinked fibers and about 15 percent by weight noncrosslinked fibers. An absorbent construct that includes the fibrous layer and a liquid storage layer. Personal care absorbent products that include the distribution layer.

Abstract: In one embodiment, a first dielectric film (24), and a second dielectric film (32) are formed over a substrate (10). The substrate is cured to at least partially change a property of the second dielectric film thereby forming an intermediate etch stop (46). A third dielectric film (42) is formed over the substrate (10). The substrate (10) is then etched to remove portions of the first dielectric film (24) and portions of the third dielectric film (42) using the intermediate etch stop (46) to form a portion of an interconnect opening (103). In an alternative embodiment, a resist layer (92), and portions of an interlevel dielectric layer (50) are etched. Upon completion of the step of etching, the photoresist layer (92) and portions of the interlevel dielectric layer (50) are completely removed.

Abstract: In accordance with embodiments of the present invention a trench-level dielectric film (26) and a via-level dielectric film (24) are formed overlying a semiconductor device substrate (10). A via opening (42) is etched in the trench-level dielectric film with a first etch chemistry that has a higher etch selectivity to the trench-level dielectric film (26) than to the via-level dielectric film (24). A trench opening (54) is patterned in a photoresist layer (52) overlying the trench-level dielectric film (26). The via-level dielectric film (24) is etched with a second etch chemistry to extend the via opening (42) into the via-level dielectric film (24). The trench-level dielectric film (26) is etched to form a trench opening.

Abstract: In one embodiment, a first dielectric film (24), and a second dielectric film (32) are formed over a substrate (10). The substrate is cured to at least partially change a property of the second dielectric film thereby forming an intermediate etch stop (46). A third dielectric film (42) is formed over the substrate (10). The substrate (10) is then etched to remove portions of the first dielectric film (24) and portions of the third dielectric film (42) using the intermediate etch stop (46) to form a portion of an interconnect opening (103). In an alternative embodiment, a resist layer (92), and portions of an interlevel dielectric layer (50) are etched. Upon completion of the step of etching, the photoresist layer (92) and portions of the interlevel dielectric layer (50) are completely removed.

Abstract: In accordance with embodiments of the present invention a trench-level dielectric film (26) and a via-level dielectric film (24) are formed overlying a semiconductor device substrate (10). A via opening (42) is etched in the trench-level dielectric film with a first etch chemistry that has a higher etch selectivity to the trench-level dielectric film (26) than to the via-level dielectric film (24). A trench opening (54) is patterned in a photoresist layer (52) overlying the trench-level dielectric film (26). The via-level dielectric film (24) is etched with a second etch chemistry to extend the via opening (42) into the via-level dielectric film (24). The trench-level dielectric film (26) is etched to form a trench opening.

Abstract: An interconnect structure having a dielectric layer with low dielectric constant is formed within an integrated circuit. In one embodiment of the invention, portions of a silicon dioxide layer (18) lying adjacent to a conductive interconnect (21) are removed to expose portions of a silicon nitride etch stop layer (16). A dielectric layer (22) having a low dielectric constant is then formed overlying the conductive interconnect (21) and the exposed portions of the silicon nitride etch stop layer (16). A portion of the dielectric layer (22) is then removed to expose the top surface of the conductive interconnect (21) to leave portions of the dielectric layer (22) between adjacent conductive interconnects (21). The resulting interconnect structure has reduced cross-talk between conductive interconnects (21) while avoiding prior art disadvantages of reduced thermal dissipation and increased mechanical stress.