Abstract: The disclosure is directed to an electronic device with a lid to manage radiation feedback. The electronic device includes a lid having at least one sidewall and a top wall, as well as a semiconductor positioned within a cavity of the lid. In certain embodiments, the lid includes at least one dielectric material and at least one internal conductive layer at least partially embedded within the at least one dielectric material. In certain embodiments, the lid includes dielectric material, as well as an internal wall extending from the top wall and positioned between an input port and an output port of the semiconductor. Such configurations may suppress any undesirable feedback through the lid between the input port and the output port of the semiconductor.

Abstract: Semiconductor devices, and more particularly arrangements of fluorinated polymers with low dielectric loss for environmental protection in semiconductor devices are disclosed. Arrangements include conformal coatings or layers of fluorinated polymers that cover a semiconductor die on a package substrate of a semiconductor device. Such fluorinated polymer arrangements may also conformally coat various electrical connections for the semiconductor die, including wire bonds. Fluorinated polymers with low dielectric constants and low moisture permeability may thereby provide reduced moisture ingress in semiconductor devices while also reducing the impact of associated dielectric loss.

Abstract: The disclosure is directed to an electronic device with a lid to manage radiation feedback. The electronic device includes a lid having at least one sidewall and a top wall, as well as a semiconductor positioned within a cavity of the lid. In certain embodiments, the lid includes at least one dielectric material and at least one internal conductive layer at least partially embedded within the at least one dielectric material. In certain embodiments, the lid includes dielectric material, as well as an internal wall extending from the top wall and positioned between an input port and an output port of the semiconductor. Such configurations may suppress any undesirable feedback through the lid between the input port and the output port of the semiconductor.

Abstract: A module package in which electronic components are packaged. The package module may comprise a base, at least one component, a housing, and a coaxial lead assembly. The component is over the base. The housing is over the base and encompasses the component. The coaxial lead assembly extends out of the housing and facilitates electrical connections with the component. The at least one coaxial lead assembly comprises a dielectric structure, a central conductor, and an outer conductor formed by a top wall extending between two side walls. The central conductor may be between the two side walls. The dielectric structure may reside between the central conductor and the outer conductor, such that the central conductor and outer conductor are isolated from one another.

Abstract: Semiconductor devices, and more particularly arrangements of fluorinated polymers with low dielectric loss for environmental protection in semiconductor devices are disclosed. Arrangements include conformal coatings or layers of fluorinated polymers that cover a semiconductor die on a package substrate of a semiconductor device. Such fluorinated polymer arrangements may also conformally coat various electrical connections for the semiconductor die, including wire bonds. Fluorinated polymers with low dielectric constants and low moisture permeability may thereby provide reduced moisture ingress in semiconductor devices while also reducing the impact of associated dielectric loss.

Abstract: There is disclosed, for use in an RF amplifier, a biasing circuit for maintaining the quiescent current of an output power transistor at a selected bias level. The biasing circuit comprises a temperature sensor circuit for generating a temperature-sensitive control voltage that varies according to changes in temperature of the output power transistor and a bias voltage generating circuit capable of detecting a variation in the temperature-sensitive control voltage. In response to a detected change in the temperature-sensitive control voltage, the bias circuit adjusts a bias voltage applied to the output power transistor by an amount suitable to offset a change in the selected bias current level caused by a temperature change related to the variation in the temperature-sensitive voltage.