Abstract: A light-emitting module includes a carrier circuit board, a light-blocking wall, a light conversion medium layer, and multiple light-emitting chips. The multiple light-emitting chips are packaged on the carrier circuit board, and each light-emitting chip is configured to emit first color light. The light-blocking wall is on the carrier circuit board and surrounds the multiple light-emitting chips. The light conversion medium layer covers the multiple light-emitting chips and part of the carrier circuit board in a space enclosed by the light-blocking wall. The light conversion medium layer is configured to convert the first color light emitted by the light-emitting chips into second color light.

Abstract: Embodiments described in this disclosure relate to formation of a gate structure of a device, such as in a replacement gate process, and the device formed thereby. In some examples, after an interfacial layer and a gate dielectric layer are deposited, a rapid anneal process, such as laser anneal or flash lamp anneal process, is performed in a controlled ambient nitrogen-containing environment to form a nitrided portion in the gate dielectric layer. The nitrided portion passivates the defects at the surface of the gate dielectric layer and can serve as a barrier to prevent etchant chemistry and defects/dopants from the subsequent gate stack layers from affecting or diffusing through the gate dielectric layer. Particularly, the rapid anneal process is performed on a millisecond scale to confine nitrogen atoms in the gate dielectric layer without diffusing into the underlying interfacial dielectric and/or any neighboring structure such as fin.

Abstract: Embodiments described in this disclosure relate to formation of a gate structure of a device, such as in a replacement gate process, and the device formed thereby. In some examples, after an interfacial layer and a gate dielectric layer are deposited, a rapid anneal process, such as laser anneal or flash lamp anneal process, is performed in a controlled ambient nitrogen-containing environment to form a nitrided portion in the gate dielectric layer. The nitrided portion passivates the defects at the surface of the gate dielectric layer and can serve as a barrier to prevent etchant chemistry and defects/dopants from the subsequent gate stack layers from affecting or diffusing through the gate dielectric layer. Particularly, the rapid anneal process is performed on a millisecond scale to confine nitrogen atoms in the gate dielectric layer without diffusing into the underlying interfacial dielectric and/or any neighboring structure such as fin.

Abstract: A pumping system for positive displacement, volumetric liquid control includes a pump having a pumping chamber with a pumping chamber inlet and a pumping chamber outlet. The pumping system further includes a liquid supply inlet for receiving liquid from a liquid supply, and an detector for detecting air in liquid flowing through the liquid path. A liquid valve actuator regulates liquid flow through the liquid supply inlet and a second valve actuator regulates liquid flow through the pumping system outlet. A controller is responsive to an output from the detector to control the pump, the first valve actuator and the second valve actuator such that liquid is directed through the liquid supply inlet and the pumping system outlet during an initial priming sequence until the quantity of air in liquid at the pumping system outlet corresponds to a predetermined value.

Abstract: A drug identification and security apparatus usable in conjunction with an electronic drug delivery system having at least one drug channel therein, the apparatus providing a first interlock mechanism between a locking member of the apparatus and the drug delivery system to lock the upper and lower doors of the drug channel and to disengage the drug delivery system and prevent removal of a drug container/cassette assembly when the locking member is in a locked position.