Patents by Inventor Terry Jeng

Terry Jeng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Synchronous semiconductor memory device
    Patent number: 5995438
    Abstract: A synchronous dynamic RAM capable of segmentally precharging each memory bank. In this SDRAM, each memory bank is divided into multiple memory blocks. Each of these memory blocks internally has its own row access circuitry, but performs independent precharging operation. Access to the memory bank can be cooperative externally, and precharge operation can be separately applied to these memory blocks while allowing utilization of row cache that is available on other blocks. The SDRAM further includes a control device for generating a dedicated precharge signal to each memory block according to a precharge signal for each memory bank. Each dedicated precharge signal independently precharges the corresponding memory block regardless of the access operations executed by other memory blocks.
    Type: Grant
    Filed: August 7, 1998
    Date of Patent: November 30, 1999
    Assignee: Powerchip Semiconductor Corp.
    Inventors: Terry Jeng, Chuan-Yu Wu, Jason Hou
  • Synchronous semiconductor memory device
    Patent number: 5936903
    Abstract: A synchronous dynamic RAM capable of segmentally precharging each memory bank. In this SDRAM, each memory bank is divided into multiple memory blocks. Each of these memory blocks internally has its own row access circuitry, but performs independent precharging operation. Access to the memory bank can be cooperative externally, and precharge operation can be separately applied to these memory blocks while allowing utilization of row cache that is available on other blocks. The SDRAM further includes a control device for generating a dedicated precharge signal to each memory block according to a precharge signal for each memory bank. Each dedicated precharge signal independently precharges the corresponding memory block regardless of the access operations executed by other memory blocks.
    Type: Grant
    Filed: August 7, 1998
    Date of Patent: August 10, 1999
    Assignee: Powerchip Semiconductor Corp.
    Inventors: Terry Jeng, Chuan-Yu Wu, Jason Hou
  • Synchronous semiconductor memory device
    Patent number: 5825710
    Abstract: A synchronous dynamic RAM capable of segmentally precharging each memory bank. In this SDRAM, each memory bank is divided into multiple memory blocks. Each of these memory blocks internally has its own row access circuitry, but performs independent precharging operation. Access to the memory bank can be cooperative externally, and precharge operation can be separately applied to these memory blocks while allowing utilization of row cache that is available on other blocks. The SDRAM further includes a control device for generating a dedicated precharge signal to each memory block according to a precharge signal for each memory bank. Each dedicated precharge signal independently precharges the corresponding memory block regardless of the access operations executed by other memory blocks.
    Type: Grant
    Filed: February 26, 1997
    Date of Patent: October 20, 1998
    Assignee: Powerchip Semiconductor Corp.
    Inventors: Terry Jeng, Chuan-Yu Wu, Jason Hou