Abstract: An MTJ MRAM cell is formed by using a reactive ion etch (RIE) to pattern an MTJ stack on which there has been formed a bilayer Ta/TaN hard mask. The hard mask is formed by patterning a masking layer that has been formed by depositing a layer of TaN over a layer of Ta on the MTJ stack. After the stack is patterned, the TaN layer serves at least two advantageous purposes: 1) it protects the Ta layer from oxidation during the etching of the stack and 2) it serves as a surface having excellent adhesion properties for a subsequently deposited dielectric layer.

Abstract: An MTJ MRAM cell is formed by using a reactive ion etch (RIE) to pattern an MTJ stack on which there has been formed a bilayer Ta/TaN hard mask. The hard mask is formed by patterning a masking layer that has been formed by depositing a layer of TaN over a layer of Ta on the MTJ stack. After the stack is patterned, the TaN layer serves at least two advantageous purposes: 1) it protects the Ta layer from oxidation during the etching of the stack and 2) it serves as a surface having excellent adhesion properties for a subsequently deposited dielectric layer.

Abstract: A method for delivering a polishing fluid to a chemical mechanical polishing surface is provided. In one embodiment, a method for delivering a polishing fluid to a polishing surface of a chemical mechanical polisher includes flowing polishing fluid to a first portion of the polishing surface through a first outlet while a second portion of the polishing surface adjacent a second outlet receives no flow of polishing fluid, and flowing polishing fluid through the second outlet to the second portion of the polishing surface.

Abstract: A cleaning apparatus is provided for brush cleaning a surface of a substrate. The apparatus comprises a first brush having a first surface geometry adapted to scrub a major surface of the substrate, and a second brush having a second surface geometry different from the first surface geometry and adapted to scrub the major surface of the substrate. In one aspect the cleaning apparatus comprises a first scrubbing apparatus having at least one brush with a profiled surface geometry, adapted to scrub a major surface of a substrate, and a second scrubbing apparatus having at least one brush with a smooth surface geometry, adapted to scrub a major surface of a substrate. Numerous other aspects are provided.

Abstract: An RIE method and apparatus provides uniform and selective etching through silicon nitride material of a supplied workpiece such as a silicon wafer having silicon oxide adjacent to the SiN. A plasma-maintaining gas that includes N.sub.2 having an inflow rate of at least 10 sccm is used to provide etch-depth uniformity across the workpiece. The plasma-maintaining gas further includes HBr and one or both of NF.sub.3 and SF.sub.6.