Abstract: A spin coatable, photosensitive black matrix coating having high surface resistivity and exhibiting an optical density greater than 3 at film thicknesses of ≦1 micron has been developed for flat panel display applications where a chrome/chrome oxide black matrix is usually employed. It possesses excellent thermal, light, and chemical stability and good shelf life. It is deposited and patterned by a simple photolithographic processes excellent thermal, light, and chemical stability and good shelf life. It is deposited and patterned by a simple photolithographic process, thereby reducing the cost of processing in relation to chrome/chrome oxide black matrix fabrication processes.

Abstract: A spin coatable, photosensitive black matrix coating having high surface resistivity and exhibiting an optical density greater than 3 at film thicknesses of ≦1 micron has been developed for flat panel display applications where a chrome/chrome oxide black matrix is usually employed. It possesses excellent thermal, light, and chemical stability and good shelf life. It is deposited and patterned by a simple photolithographic processes excellent thermal, light, and chemical stability and good shelf life. It is deposited and patterned by a simple photolithographic process, thereby reducing the cost of processing in relation to chrome/chrome oxide black matrix fabrication processes.

Abstract: A spin coatable, photosensitive black matrix coating having high surface resistivity and exhibiting an optical density greater than 3 at film thicknesses of ≦1 micron has been developed for flat panel display applications where a chrome/chrome oxide black matrix is usually employed. It possesses excellent thermal, light, and chemical stability and good shelf life. It is deposited and patterned by a simple photolithographic processes excellent thermal, light, and chemical stability and good shelf life. It is deposited and patterned by a simple photolithographic process, thereby reducing the cost of processing in relation to chrome/chrome oxide black matrix fabrication processes.

Abstract: A high optical density, i.e., .gtoreq.3.0, at 1 micron or less film thickness, black matrix is disclosed having improved stability and shelf life as a consequence of admixing Pigment Black 7 and organic dye or dye mixtures on a polyimide polymer vehicle.

Abstract: An organic black matrix having high resistivity (.gtoreq.10.sup.11 ohm/square), high optical density (.gtoreq.2.0) at ultra thin film thicknesses (.ltoreq.1.0 microns) for improved STN and TFT pixel display applications is made possible by combining polyimide/dye solutions and mixed metal oxide pigment dispersions at a weight/weight ratio of dye to pigment of 1:15 to 3:15. The need for low resistivity carbon black, as a replacement for sputtered chrome, is negated.

Abstract: A light absorbing medium to be interposed under photosensitive layers, such as a photo-resist for integrated circuit "chips" to eliminate defects caused by reflected light, has a polymer vehicle which can penetrate into small depressions of a substrate and form a thin, smooth and uniform coating. The coating includes a light absorbing dye. This light absorbing layer is imageable in the process. The light absorbing material eliminates many of the defects caused by reflected light resulting in increased sharpness of the images in the photo-resist. The material reduces the losses due to defects and increases the yield of useable product.

Abstract: The invention is a method and apparatus for a pirani pressure sensor. The apparatus consists of a current supply and current receiving means affixed to a substrate. Bridging the current supply means and current receiving means is an electrically conductive polymer. The pirani pressure sensor may be made using conventional photolithographic techniques.

Abstract: The invention is an apparatus and method for making a polymer bolometer. The apparatus consists of a current supply and current receiving paths affixed to a substrate. Bridging the current supply paths and current receiving paths is an electrically conductive polymer. The polymer bolometer may be fabricated using conventional photolithographic techniques.

Abstract: An electrical type strain gauge for measuring both micro and macro deformations. The gauge may be constructed from thin films of homogeneously conductive polymers, including soluble polyaniline-based conducting polymers and ion-implanted organic polymers. The gauges are characterized by unexpected piezoresistivity from materials having high bulk resistivity, thermal stability, good flexibility, photoimageability and without adding carbon or metal particulate material to the polymer.

Abstract: Soluble conducting polymers from substituted polyanilines and large organic counterions are disclosed and used directly from solution in the manufacture of electronic devices.

Abstract: A light absorbing medium to be interposed under photosensitive layers, such as a photo-resist for integrated circuit "chips" to eliminate defects caused by reflected light, has a polymer vehicle which can penetrate into small depressions of a substrate and form a thin, smooth and uniform coating. The coating includes a light absorbing dye. This light absorbing layer is imageable in the process. The light absorbing material eliminates many of the defects caused by reflected light resulting in increased sharpness of the images in the photo-resist. The material reduces the losses due to defects and increases the yield of useable product.

Abstract: Filters suitable for microelectronic uses and the like may be prepared directly on substrates either as monolithically integrated filters or as hybrid filters using a soluble dye material in a resin. The resin may be applied to microelectronic substrates and patterned by conventional microphotolithographic processes.

Abstract: A broad spectrum light absorbing medium to be coated over photosensitive layers, such as a photoresist for integrated circuit "chips" to act as a true surface for autofocus of the camera used to expose the photoresist. The product may also be used where a light impermeable, high contrast or black coating is needed, such as, in liquid crystal displays and light emitting diodes, photodiodes, solid state lasers, or patterning apertures on light-wave modulators. The coating absorbs light from 200 to 1000 nanometers. The coating has a polymer vehicle which can form a tightly adhering, thin, smooth and uniform coating. The coating includes a light absorbing dye. This light absorbing layer may be imageable.

Abstract: A boron doped, silicon oxide-forming film is produced on a semiconductor wafer by coating the wafer with a solution of a silicon compound and a boron compound, in a blend of two polar organic solvents, one of which has a low boiling point, and the other has a high boiling point, between 185.degree. and 300.degree. C. During a subsequent heating step, the high boiling point solvent redissolves any crystalline precipitate that forms during spin-on, giving a more uniform film for diffusion, and consequently a damage-free wafer surface.

Abstract: Disclosed is a method of forming patterned electron beam resists from polymers that undergo energy intensity or electron dosage dependent reactions. Upon the introduction of sufficient energy, the polymer generates two reactive species that react with each other. However, with a lower amount of energy, the polymer generates only one reactive species. A thin film of the dosage dependent polymer is applied to a support and is subjected to a programmed electron beam scan. The electron beam irradiates a portion of the polymer film according to the programmed pattern and furnishes enough energy in the path of the beam to cause the polymer to cross link where directly irradiated, thus causing the polymer to become insoluble in certain solvents. The portion of the polymer adjacent the directly irradiated portion is subjected to electrons back-scattering from the surface of the support, which electrons are a small percentage of the total beamed at the polymer.

Abstract: Disclosed is a method of forming patterned electron beam resists from styrene-diene block copolymers and the resists formed thereby. A thin film of a styrene-diene block copolymer is applied to a support and is subjected to an electron beam scan. An electron beam irradiates a portion of the copolymer film according to a programmed pattern; the copolymer cross links where irradiated, thus causing the irradiated portion of the copolymer to become insoluble in a solvent. The balance of the copolymer remains soluble in the solvent, dissolves and is removed, resulting in the desired pattern of openings.