Patents by Inventor Terry Lee Lines

Terry Lee Lines has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SYSTEM AND METHOD FOR INCREASING BREAKDOWN VOLTAGE OF LOCOS ISOLATED DEVICES
    Publication number: 20110065256
    Abstract: An efficient method is disclosed for increasing the breakdown voltage of an integrated circuit device that is isolated by a local oxidation of silicon (LOCOS) process. The method comprises forming a portion of a field oxide in an integrated circuit so that the field oxide has a gradual profile. The gradual profile of the field oxide reduces impact ionization in the field oxide by creating a reduced value of electric field for a given value of applied voltage. The reduction in impact ionization increases the breakdown voltage of the integrated circuit. The gradual profile is formed by using an increased thickness of pad oxide and a reduced thickness of silicon nitride during a field oxide oxidation process.
    Type: Application
    Filed: November 29, 2010
    Publication date: March 17, 2011
    Applicant: National Semiconductor Corporation
    Inventors: Richard W. Foote, JR., Terry Lee Lines, Alexei Sadovnikov, Andy Strachan
  • System and method for increasing breakdown voltage of LOCOS isolated devices
    Patent number: 7867871
    Abstract: An efficient method is disclosed for increasing the breakdown voltage of an integrated circuit device that is isolated by a local oxidation of silicon (LOCOS) process. The method comprises forming a portion of a field oxide in an integrated circuit so that the field oxide has a gradual profile. The gradual profile of the field oxide reduces impact ionization in the field oxide by creating a reduced value of electric field for a given value of applied voltage. The reduction in impact ionization increases the breakdown voltage of the integrated circuit. The gradual profile is formed by using an increased thickness of pad oxide and a reduced thickness of silicon nitride during a field oxide oxidation process.
    Type: Grant
    Filed: July 13, 2006
    Date of Patent: January 11, 2011
    Assignee: National Semiconductor Corporation
    Inventors: Richard W. Foote, Terry Lee Lines, Alexei Sadovnikov, Andy Strachan