Abstract: Memory devices, such as DRAM memory devices, may include one or more metal layers above a local interconnect of the DRAM memory that make contact to lower gate regions of the memory device. As the size of semiconductor components decreases and circuit densities increase, the density of the metal routing in these upper metal layers becomes increasingly difficult to fabricate. By providing additional metal routing in the lower gate regions that may be coupled to the upper metal layers, the spacing requirements of the upper metal layers may be eased, while maintaining the size of the semiconductor device. In addition, the additional metal routing formed in the gate regions of the memory devices may be disposed parallel to other metal contacts in a strapping configuration, thus reducing a resistance of the metal contacts, such as buried digit lines of a DRAM memory cell.

Abstract: Memory devices, such as DRAM memory devices, may include one or more metal layers above a local interconnect of the DRAM memory that make contact to lower gate regions of the memory device. As the size of semiconductor components decreases and circuit densities increase, the density of the metal routing in these upper metal layers becomes increasingly difficult to fabricate. By providing additional metal routing in the lower gate regions that may be coupled to the upper metal layers, the spacing requirements of the upper metal layers may be eased, while maintaining the size of the semiconductor device. In addition, the additional metal routing formed in the gate regions of the memory devices may be disposed parallel to other metal contacts in a strapping configuration, thus reducing a resistance of the metal contacts, such as buried digit lines of a DRAM memory cell.

Abstract: Memory devices, such as DRAM memory devices, may include one or more metal layers above a local interconnect of the DRAM memory that make contact to lower gate regions of the memory device. As the size of semiconductor components decreases and circuit densities increase, the density of the metal routing in these upper metal layers becomes increasingly difficult to fabricate. By providing additional metal routing in the lower gate regions that may be coupled to the upper metal layers, the spacing requirements of the upper metal layers may be eased, while maintaining the size of the semiconductor device. In addition, the additional metal routing formed in the gate regions of the memory devices may be disposed parallel to other metal contacts in a strapping configuration, thus reducing a resistance of the metal contacts, such as buried digit lines of a DRAM memory cell.

Abstract: A process and apparatus directed to forming a terraced film stack of a semiconductor device, for example, a DRAM memory device, is disclosed. The present invention addresses etch undercut resulting from materials of different etch selectivity used in the film stack, which if not addressed can cause device failure.

Abstract: The present invention provides for the enhancement of the storage capacity of a data disk drive while reducing optical path optics, electronics and/or the mass and complexity of associated read/write heads. The system utilizes light transmitted by optical elements to servo track a data disk and to heat the data disk during reading and writing of data, and magnetic elements for actual reading and writing.

Abstract: A process and apparatus directed to forming a terraced film stack of a semiconductor device, for example, a DRAM memory device, is disclosed. The present invention addresses etch undercut resulting from materials of different etch selectivity used in the film stack, which if not addressed can cause device failure.

Abstract: A process directed to forming a terraced film stack of a semiconductor device, for example, a DRAM memory device, is disclosed. The present invention addresses etch undercut resulting from materials of different etch selectivity used in the film stack, which if not addressed can cause device failure.

Abstract: A process and apparatus directed to forming a terraced film stack of a semiconductor device, for example, a DRAM memory device, is disclosed. The present invention addresses etch undercut resulting from materials of different etch selectivity used in the film stack, which if not addressed can cause device failure.

Abstract: A process directed to forming a terraced film stack of a semiconductor device, for example, a DRAM memory device, is disclosed. The present invention addresses etch undercut resulting from materials of different etch selectivity used in the film stack, which if not addressed can cause device failure.

Abstract: An apparatus comprises a storage medium, a recording head, a source of electromagnetic radiation, and a control circuit for modulating the source of electromagnetic radiation in response to a static deviation of a spacing between the recording head and the storage medium. A method of compensating a static deviation of a spacing between a recording head and a storage medium performed by the apparatus, and a method of precompensating for nonlinear transition shifts in a heat assisted magnetic recording system, are also provided.

Abstract: A process and apparatus directed to forming a terraced film stack of a semiconductor device, for example, a DRAM memory device, is disclosed. The present invention addresses etch undercut resulting from materials of different etch selectivity used in the film stack, which if not addressed can cause device failure.

Abstract: A process and apparatus directed to forming a terraced film stack of a semiconductor device, for example, a DRAM memory device, is disclosed. The present invention addresses etch undercut resulting from materials of different etch selectivity used in the film stack, which if not addressed can cause device failure.

Abstract: Memory devices, such as DRAM memory devices, may include one or more metal layers above a local interconnect of the DRAM memory that make contact to lower gate regions of the memory device. As the size of semiconductor components decreases and circuit densities increase, the density of the metal routing in these upper metal layers becomes increasingly difficult to fabricate. By providing additional metal routing in the lower gate regions that may be coupled to the upper metal layers, the spacing requirements of the upper metal layers may be eased, while maintaining the size of the semiconductor device. In addition, the additional metal routing formed in the gate regions of the memory devices may be disposed parallel to other metal contacts in a strapping configuration, thus reducing a resistance of the metal contacts, such as buried digit lines of a DRAM memory cell.

Abstract: A process and apparatus directed to forming a terraced film stack of a semiconductor device, for example, a DRAM memory device, is disclosed. The present invention addresses etch undercut resulting from materials of different etch selectivity used in the film stack, which if not addressed can cause device failure.

Abstract: A magnetic recording medium comprises a magnetically soft underlayer having a plurality of cavities in a surface thereof, and a magnetic recording material in the cavities, wherein a surface of the magnetic recording material in the cavities is substantially coplanar with the surface of the soft underlayer. A recording system that includes the recording medium is also included.

Abstract: Embodiments of a data storage system having thermally activated readout are provided, in one embodiment, a data storage system includes a source of heat, a substrate, a write layer disposed above the substrate, a copy layer disposed above the write layer, a flying head disposed above the layers and carrying the source of heat for heating a selected spot on the copy and write layers, wherein the write layer comprises a ferromagnetic material selected to have an extremely high coercivity at room temperature and a very high write temperature Twrite, and the copy layer comprises a ferromagnetic material selected to have a coercivity always less than coercivity of the write layer at the same temperature and a copy temperature Tcopy substantially less than the write temperature of the write layer.

Abstract: An optical head utilizes a micro-machined element in combination with a light source and a lens to write and read data onto a storage disk. The micro-machined element may include a steerable micro-machined mirror or a micro-actuator. A beam of laser light transmitted from the light source to the optical head and a reflected light from the storage disk is altered by a movement of the micro-machined element. In this manner a focused optical spot is scanned back and forth in a direction which is approximately parallel to the radial direction of the storage disk.

Abstract: A process and apparatus directed to forming metal plugs in a peripheral logic circuitry area of a semiconductor device to contact both N+ and P+ doped regions of transistors in the peripheral logic circuitry area. The metal plugs are formed after all high temperature processing used in wafer fabrication is completed. The metal plugs are formed without metal diffusing into the active areas of the substrate. The metal plugs may form an oval slot as seen from a top down view of the semiconductor device.

Abstract: A process and apparatus directed to forming metal plugs in a peripheral logic circuitry area of a semiconductor device to contact both N+ and P+ doped regions of transistors in the peripheral logic circuitry area. The metal plugs are formed after all high temperature processing used in wafer fabrication is completed. The metal plugs are formed without metal diffusing into the active areas of the substrate. The metal plugs may form an oval slot as seen from a top down view of the semiconductor device.

Abstract: The present invention provides for the enhancement of the storage capacity of a data disk drive while reducing optical path optics, electronics and/or the mass and complexity of associated read/write heads. The system utilizes light transmitted by optical elements to servo track a data disk and to heat the data disk during reading and writing of data, and magnetic elements for actual reading and writing.