Abstract: A plasma processing control method for detecting an endpoint and controlling plasma processing is disclosed. The plasma processing control method includes tracking one or more harmonics that are produced due to nonlinearity of an impedance of a plasma environment. The one or more harmonics are associated with voltage, current, or a combination thereof. The plasma processing control method further includes analyzing the tracked one or more harmonics and detecting an endpoint of plasma processing based on the analysis of the tracked one or more harmonics. Thereafter, the plasma processing control method includes stopping the plasma processing based on the detected endpoint.

Abstract: An method for detecting excursion in plasma processing and controlling plasma processing is disclosed. The method includes the steps of tracking harmonics that are produced due to nonlinearity of an impedance of a plasma environment. The method includes the steps of creating a fingerprint of energy distribution in frequency space based on the tracked harmonics and comparing the created fingerprint with reference spectra of an ideal plasma processing to detect deviation of the fingerprint with the reference spectra. The method includes the steps of detecting an excursion in the plasma processing based on the detected deviation. The method includes the steps of generating recommendations to control the detected excursion. Such recommendations are generated based on the detected deviation and the associated historical data related to corrective action stored in a corrective action database.

Abstract: A system to measure an impedance of an effluent associated with a foreline (effluent line or exhaust) is provided. This system includes a remote plasma source, a process chamber, an effluent line, an electrode assembly, an RF driver, and a detector. The remote plasma source couples to the process chambers and is operable to supply chamber-cleaning gas to the process chamber. The effluent line also couples to the process chamber where chamber-cleaning effluent exhausts the process chamber via the effluent line. The electrode assembly, located in the effluent line, is exposed to the effluent exhausting from the process chamber. The electrode assembly, coupled to the RF driver, receives an RF signal from the RF driver. The RF signal applied to the electrode assembly induces a plasma discharge within the electrode assembly and effluent line. A detector coupled to the electrode assembly detects an end point of a chamber clean of the process chamber.

Abstract: An RF power delivery diagnostic system is provided herein. The system comprises an RF power source (303), an impedance matching network (305), a plasma reactor (307) in electrical contact with the RF power source by way of the impedance matching network, a first RF sensor (309) adapted to measure at least one attribute of the RF power input to the impedance matching network, and a second RF sensor (311) adapted to measure at least one attribute of the RF power output by the impedance matching network.

Abstract: A clamp assembly for bringing an RF sensor into electrical contact with an RF current carrier is provided herein. The clamp assembly (101) comprises a first wedge-shaped element (103), and a second wedge-shaped element (105) which is slidingly engaged with said first wedge-shaped element. Preferably, the clamp assembly also comprises a collar (113) within which the first and second wedge-shaped elements are disposed. The clamp assembly preferably further comprises a fastener (111), such as a screw, which adjoins the first and second elements, in which case the clamp assembly is adapted such that, as the screw is rotated in a first direction, at least one of the first and second elements expands against the collar and/or the RF current carrier.

Abstract: A system to measure an impedance of an effluent associated with a foreline (effluent line or exhaust) is provided. This system includes a remote plasma source, a process chamber, an effluent line, an electrode assembly, an RF driver, and a detector. The remote plasma source couples to the process chambers and is operable to supply chamber-cleaning gas to the process chamber. The effluent line also couples to the process chamber where chamber-cleaning effluent exhausts the process chamber via the effluent line. The electrode assembly, located in the effluent line, is exposed to the effluent exhausting from the process chamber. The electrode assembly, coupled to the RF driver, receives an RF signal from the RF driver. The RF signal applied to the electrode assembly induces a plasma discharge within the electrode assembly and effluent line. A detector coupled to the electrode assembly detects an end point of a chamber clean of the process chamber.

Abstract: An RF power delivery diagnostic system is provided herein. The system comprises an RF power source (303), an impedance matching network (305), a plasma reactor (307) in electrical contact with the RF power source by way of the impedance matching network, a first RF sensor (309) adapted to measure at least one attribute of the RF power input to the impedance matching network, and a second RF sensor (311) adapted to measure at least one attribute of the RF power output by the impedance matching network.

Abstract: An RF power delivery diagnostic system is provided herein. The system comprises an RF power source (303), an impedance matching network (305), a plasma reactor (307) in electrical contact with the RF power source by way of the impedance matching network, a first RF sensor (309) adapted to measure at least one attribute of the RF power input to the impedance matching network, and a second RF sensor (311) adapted to measure at least one attribute of the RF power output by the impedance matching network.

Abstract: A system (10) is provided herein for monitoring the harmonic content of the RF signal delivered to an RF powered device (13). The system comprises (a) a voltage transducer (16) adapted to sample the voltage of the RF signal and to output a first signal representative thereof, (b) a current transducer (17) adapted to sample the current of the RF signal and to output a second signal representative thereof, and (c) a memory device (67) in communication with at least one, and preferably both, of the aforementioned transducers 16 and 17 and which contains calibration information specific to the transducers.

Abstract: A method for manufacturing integrated circuits uses an atmospheric magnetic mirror plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segregate, the wafer may be partially diced. Then, the wafer may be tape laminated. Next, the backside of the wafer may be etched. As the backside material is removed, the partial dicing and through-die vias may be exposed. As such, the method reduced handling steps and increases yield. Furthermore, the method may be used in association with wafer level processing and flip chip with bump manufacturing.

Abstract: A system (10) is provided herein for monitoring the harmonic content of the RF signal delivered to an RF powered device (13). The system comprises (a) a voltage transducer (16) adapted to sample the voltage of the RF signal and to output a first signal representative thereof, (b) a current transducer (17) adapted to sample the current of the RF signal and to output a second signal representative thereof, and (c) a memory device (67) in communication with at least one, and preferably both, of the aforementioned transducers 16 and 17 and which contains calibration information specific to the transducers.

Abstract: A method for manufacturing integrated circuits uses an atmospheric magnetic mirror plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segregate, the wafer may be partially diced. Then, the wafer may be tape laminated. Next, the backside of the wafer may be etched. As the backside material is removed, the partial dicing and through-die vias may be exposed. As such, the method reduced handling steps and increases yield. Furthermore, the method may be used in association with wafer level processing and flip chip with bump manufacturing.

Abstract: A method for manufacturing integrated circuits uses an atmospheric magnetic mirror plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segregate, the wafer may be partially diced. Then, the wafer may be tape laminated. Next, the backside of the wafer may be etched. As the backside material is removed, the partial dicing and through-die vias may be exposed. As such, the method reduced handling steps and increases yield. Furthermore, the method may be used in association with wafer level processing and flip chip with bump manufacturing.

Abstract: The invention is directed to a method for manufacturing integrated circuits. In one exemplary embodiment, the method uses an atmospheric plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segregate, the wafer may be partially diced. Then, the wafer may be tape laminated. Next, the backside of the wafer may be etched. As the backside material is removed, the partial dicing and through-die vias may be exposed. As such, the method reduced handling steps and increases yield. Furthermore, the method may be used in association with wafer level processing and flip chip with bump manufacturing.

Abstract: A retractable probe system (12) senses in situ a plurality of predetermined process parameters of a wafer (24) fabrication environment (16) and includes a sensing device (47) for sensing the predetermined process parameters, a probe arm (46) for holding sensing device (47) and having sufficient length to extend sensing device (47) into a predetermined location of the fabrication environment (16). A housing (36) receives the sensing device (47) and probe arm (46). A locator mechanism (52, 42, and 44) controllably locates sensing device 47) and probe arm (46) within fabrication environment (16) and within housing (36). An isolator mechanism (34) isolates sensing device (47) and probe arm (46) within housing (36) and essentially out of gases communication with fabrication environment (16). Cleaning mechanism (54) cleanses sensing device (47) within housing (36) and permits sensing device (47) to be immediately thereafter located in fabrication environment (16).

Abstract: A retractable probe system (12) senses in situ a plurality of predetermined process parameters of a wafer (24) fabrication environment (16) and includes a sensing device (47) for sensing the predetermined process parameters, a probe arm (46) for holding sensing device (47) and having sufficient length to extend sensing device (47) into a predetermined location of the fabrication environment (16). A housing (36) receives the sensing device (47) and probe arm (46). A locator mechanism (52, 42, and 44) controllably locates sensing device 47) and probe arm (46) within fabrication environment (16) and within housing (36). An isolator mechanism (34) isolates sensing device (47) and probe arm (46) within housing (36) and essentially out of gases communication with fabrication environment (16). Cleaning mechanism (54) cleanses sensing device (47) within housing (36) and permits sensing device (47) to be immediately thereafter located in fabrication environment (16).

Abstract: A plasma monitoring and control method and system monitor and control plasma in an electronic device fabrication reactor by sensing the voltage of the radio frequency power that is directed into the plasma producing gas at the input to the plasma producing environment of the electronic device fabrication reactor. The method and system further senses the current and phase angle of the radio frequency power directed to the plasma producing gas at the input to the plasma producing environment. Full load impedance is measured and used in determining characteristics of the plasma environment, including not only discharge and sheath impedances, but also chuck and wafer impedances, primary ground path impedance, and a secondary ground path impedance associated with the plasma environment. This permits end point detection of both deposition and etch processes, as well as advanced process control for electronic device fabrication.