Abstract: A bumper absorber (9) has a squared U-shaped cross section formed of: a vertical face (11) extending in a top-bottom direction and a vehicle width direction, and a top face (12) and a bottom face (13) respectively extending rearward from a top end and a bottom end of the vertical face (11). The bumper absorber (9) is configured such that the top face (12) and the bottom face (13) thereof are supported by the bumper reinforcement (10) via multiple attachment members (23 to 27), and an interval between the attachment members adjacent to each other in the vehicle width direction is set to decrease from end portions (9b) in the vehicle width direction toward a central portion (9a) in the vehicle width direction.

Abstract: A bumper absorber (9) has a squared U-shaped cross section formed of: a vertical face (11) extending in a top-bottom direction and a vehicle width direction, and a top face (12) and a bottom face (13) respectively extending rearward from a top end and a bottom end of the vertical face (11). The bumper absorber (9) is configured such that the top face (12) and the bottom face (13) thereof are supported by the bumper reinforcement (10) via multiple attachment members (23 to 27), and an interval between the attachment members adjacent to each other in the vehicle width direction is set to decrease from end portions (9b) in the vehicle width direction toward a central portion (9a) in the vehicle width direction.

Abstract: A gastric access device having an external bolster and a tubular body. The tubular body has an integral bolster portion at one end and an integral dilator portion at an opposite end. An incision extending from an external body surface to an internal body cavity is formed and the gastric access device is inserted through the incision such that the bolster portion is in contact with an inner body surface surrounding the internal body cavity, the tubular body lies within and projects outwardly from the incision, and the dilator portion is on the outside or exterior of the body. The external bolster is slid or pushed down over the dilator portion and the projecting portion of the tubular body and into contact with the external surface of the body. The projecting portion of the tubular body is clamped and subsequently severed to disconnect the dilator portion from the tubular body.

Abstract: A duplexed bus type network in which a main transmission line and a stand-by transmission line are interconnected by a repeater (30), a changeover switch (40) or a two-way amplifier, a modem at each station is duplexed and connected to the main transmission line and the stand-by transmission line, and, upon trouble in one modem (11A), only the relevant station is switched over to the modem (21A) belonging to the stand-by transmission line. When the main transmission line is broken, all the stations are simultaneously switched over to the stand-by transmission line.

Abstract: A polycrystalline layer is formed as a passivation layer on a monocrystalline semiconductor substrate, the polycrystalline layer containing oxygen in the range between 2 to 45 atomic percent. The density of surface states between the surface of said substrate and the polycrystalline silicon layer is less than 10.sup.10 /cm.sup.2 .multidot.eV at the middle portion of a forbidden band, and the interface density of fixed charge in the polycrystalline layer is less than 10.sup.10 /cm.sup.2.

Abstract: A semiconductor device and method of making the same is disclosed having a surface passivation film of a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms.The polycrystalline silicon layer is locally electrically insulated by oxidizing throughout the thickness of the layer.The local oxidizing treatment causes the polycrystalline or silicon layer to pattern.

Abstract: An oxygen or nitrogen ion beam is implanted into a polycrystalline silicon or in an amorphous silicon layer, or a single crystal device body or layer, on a semiconductor substrate to an extent sufficient to convert the polycrystalline silicon layer, the amorphous layer or the single crystal device body or layer into a semi-insulating layer having a resistivity of 10.sup.7 to 10.sup.11 ohm-cm, which has improved passivation property.

Abstract: Silicon ions are implanted in a silicon dioxide layer on a silicon substrate so that the dioxide layer is converted into a semi-insulating layer having an improved passivation property.

Abstract: A method of making a semiconductor device which has sharp corners on an upper surface and wherein a passivation layer is formed over said surface and windows are formed in the passivation layer for the attaching and formation of electrodes in which a photoresist material is placed over the passivation layer and selectively removed so as to leave areas of photoresist at locations over said passivation layer wherein electrodes are to be formed after which a layer of metal is formed over the surface and the metal and photoresist is removed at those portions where the photoresist layer remained after which passivation the area is etched through the windows in the metal layer and the metal layer is then removed and the electrodes are formed in the windows.

Abstract: A semiconductive device is provided which includes a single crystal substrate. A first insulating layer arranged on one surface of the substrate is of polycrystalline silicon containing oxygen. A second insulating layer formed on the first insulating layer is of polycrystalline silicon containing one of a group consisting of nitrogen, Si.sub.3 N.sub.4, Al.sub.2 O.sub.3 and silicone resin. The substrate includes at least one PN junction which extends to the said surface of the substrate. A novel method of making is also disclosed.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a first polycrystalline silicon layer containing oxygen atoms on a semiconductor layer, of forming a second polycrystalline silicon layer containing nitrogen atoms on the first polycrystalline silicon layer, of removing a predetermined part of the first and second polycrystalline silicon layers to form an opening therein, and of diffusing impurity material into the semiconductor layer through the opening in order to form a diffused region. The fabricating process can be remarkably simplified.

Abstract: A polycrystalline silicon layer as a passivation layer formed on a semiconductor single crystal layer in a semiconductor device and in which polycrystalline silicon layer contains 2 to 45 atomic percent of oxygen. This layer can be formed under accurate control by utilizing a mixed gas of nitrogen oxide as an oxygen supply source and a silicon compound as a silicon supply source is thermally decomposed. The polycrystalline silicon is constituted of grains comprising single crystals of silicon. Oxygen atoms are uniformly distributed in the grains. Substantially no SiO.sub.2 layer exists between the grains and the semiconductor single crystal layer.

Abstract: A Metal Insulator Semiconductor (MIS) field effect device has an oxygen-doped polycrystalline silicon layer on the field portion in order to prevent an unwanted parasitic inversion layer. The oxygen-doped polycrystalline silicon layer contains oxygen in the range of 2 to 40 atomic percent.

Abstract: A thin film resistor is formed of polycrystalline silicon which contains 2 to 45 atomic percent of oxygen and wherein the resistivity of the polycrystalline silicon film varies as a function of the amount of oxygen contained in the film and wherein the resistivity is substantially higher than polycrystalline silicon not containing oxygen.