Abstract: A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure of a structural unit (u21) represented by general formula (u2-1) shown below, and the volume ratio of the first block, based on all blocks constituting the block copolymer being 42 to 44 vol %: In which RP211 represents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and RP212 is a group derived from a compound represented by formula SHRt1, wherein Rt1 represents a hydrocarbon group having 1 to 5 carbon atoms optionally having a substituent.

Abstract: A resin composition for forming a phase-separated structure containing a block copolymer having a first block and a second block, in which the first block is formed of a constituent unit represented by Formula (b1), the second block is formed of a constituent unit represented by Formula (b2m) and a random copolymer having a constituent unit represented by Formula (b2g), and a ratio of a volume of the first block is 20% to 80% by volume.

Abstract: A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure represented by general formula (u2-1), and a block (b22) consisting of a polymer having a repeating structure of a structural unit (u22) containing a silicon atom, and the block (b22) is positioned between the first block and the block (b21) (wherein RP211 represents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and RP212 represents an organic group having a polar group).

Abstract: A resin composition for forming a phase-separated structure containing a block copolymer having a first block and a second block, in which the first block is formed of a constituent unit represented by Formula (b1), the second block is formed of a constituent unit represented by Formula (b2m) and a random copolymer having a constituent unit represented by Formula (b2g), and a ratio of a volume of the first block is 20% to 80% by volume.

Abstract: A block copolymer including a first block and a second block, the first block consisting of a polymer (P1) having a repeating structure of a structural unit (u1) containing in a side chain thereof a hyperbranched structure containing a silicon atom.

Abstract: A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure of a structural unit (u21) represented by general formula (u2-1) shown below, and the volume ratio of the first block, based on all blocks constituting the block copolymer being 42 to 44 vol %: In which RP211 represents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and RP212 is a group derived from a compound represented by formula SHRt1, wherein Rt1 represents a hydrocarbon group having 1 to 5 carbon atoms optionally having a substituent.

Abstract: A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure represented by general formula (u2-1), and a block (b22) consisting of a polymer having a repeating structure of a structural unit (u22) containing a silicon atom, and the block (b22) is positioned between the first block and the block (b21) (wherein RP211 represents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and RP212 represents an organic group having a polar group).

Abstract: A block copolymer including a first block and a second block, the first block consisting of a polymer (P1) having a repeating structure of a structural unit (u1) containing in a side chain thereof a hyperbranched structure containing a silicon atom.

Abstract: A block copolymer containing a first block having a structure represented by general formula (1) shown below (Rs01 and Rs02 each independently represents an organic group, provided that at least one of Rs01 and Rs02 has a polar group; and * represents a valence bond).

Abstract: The present invention provides a thermoelectric conversion material having a low thermal conductivity and having an improved figure of merit, and a method for producing it. The thermoelectric conversion material has, as formed on a substrate having a nano-level microporous nanostructure, a thermoelectric semiconductor layer prepared by forming a thermoelectric semiconductor material into a film, wherein the substrate is a block copolymer substrate formed of a block copolymer that comprises a polymethyl methacrylate unit and a polyhedral oligomeric silsesquioxane-containing polymethacrylate unit, and the thermoelectric semiconductor material is a p-type bismuth telluride or an n-type bismuth telluride. The production method comprises a substrate formation step of forming the nanostructure-having block copolymer substrate, and a film formation step of forming a p-type bismuth telluride or an n-type bismuth telluride into a film to thereby provide a thermoelectric semiconductor layer.

Abstract: Block copolymers and methods of making patterns of organic thin films using the block copolymers. The block copolymers comprise a fluorinated block. Thin films of the block copolymers have microdomains that can be aligned. As a result the patterns of organic thin films having smaller dimensions than the pattern of incident deep-UV or e-beam radiation can be formed. For example, the block copolymers can be used in lithography, filtration, and templating applications.

Abstract: A block copolymer containing a first block having a structure represented by general formula (1) shown below (Rs01 and Rs02 each independently represents an organic group, provided that at least one of Rs01 and Rs02 has a polar group; and * represents a valence bond).

Abstract: A method of producing a structure containing a phase-separated structure, including forming, on a substrate, a layer containing a block copolymer having a block of a polyhedral oligomeric silsesquioxane structure-containing structural unit; forming a top coat film by applying, to the layer containing the block copolymer, a top coat material which undergoes a change in polarity upon heating, and controls a surface energy of the layer containing the block copolymer; and subjecting the layer containing the block copolymer on which the top coat film is formed to phase separation by thermal annealing.

Abstract: The present invention provides a thermoelectric conversion material having a low thermal conductivity and having an improved figure of merit, and a method for producing it. The thermoelectric conversion material has, as formed on a substrate having a nano-level microporous nanostructure, a thermoelectric semiconductor layer prepared by forming a thermoelectric semiconductor material into a film, wherein the substrate is a block copolymer substrate formed of a block copolymer that comprises a polymethyl methacrylate unit and a polyhedral oligomeric silsesquioxane-containing polymethacrylate unit, and the thermoelectric semiconductor material is a p-type bismuth telluride or an n-type bismuth telluride. The production method comprises a substrate formation step of forming the nanostructure-having block copolymer substrate, and a film formation step of forming a p-type bismuth telluride or an n-type bismuth telluride into a film to thereby provide a thermoelectric semiconductor layer.

Abstract: Block copolymers and methods of making patterns of organic thin films using the block copolymers. The block copolymers comprise a fluorinated block. Thin films of the block copolymers have microdomains that can be aligned. As a result the patterns of organic thin films having smaller dimensions than the pattern of incident deep-UV or e-beam radiation can be formed. For example, the block copolymers can be used in lithography, filtration, and templating applications.

Abstract: A method of producing a structure containing a phase-separated structure, including forming, on a substrate, a layer containing a block copolymer having a block of a polyhedral oligomeric silsesquioxane structure-containing structural unit; forming a top coat film by applying, to the layer containing the block copolymer, a top coat material which undergoes a change in polarity upon heating, and controls a surface energy of the layer containing the block copolymer; and subjecting the layer containing the block copolymer on which the top coat film is formed to phase separation by thermal annealing.

Abstract: The objects of the present invention are to provide a polymer thin film having finer structure than the conventional product, excellent regularity over a wide range and only limited defects, patterned media, methods for producing the thin film and patterned media, and surface modifying agent used in these production methods. The method of the present invention is for producing a polymer thin film with a plurality of microdomains regularly arranged in a continuous phase by microphase separation on a substrate, comprising steps for forming a grafted silsesquioxane film on the substrate, and for forming a pattern different in chemical properties from the grafted silsesquioxane film in such a way that the pattern corresponds to the microdomain arrangement.

Abstract: The present invention is a process for producing a polyester from a dicarboxylic acid and a diol, which comprises polycondensing the dicarboxylic acid and the diol under the presence of a distannoxane catalyst. Also, the present invention is a process for producing a polyester which comprises melt polycondensing the dicarboxylic acid and the diol under normal pressure in the presence of the distannoxane catalyst, wherein an organic solvent which dose not dissolved any of the dicarboxylic acid, the diol and the polyester produced from the dicarboxylic acid the diol is present and, whereby, two phases are mainly present.