Patents by Inventor Teruaki Higo
Teruaki Higo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11515439Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.Type: GrantFiled: December 11, 2020Date of Patent: November 29, 2022Assignee: SHARP KABUSHIKI KAISHAInventors: Teruaki Higo, Chikao Okamoto, Naoki Asano, Masamichi Kobayashi, Natsuko Fujiwara, Rihito Suganuma, Toshihiko Sakai, Kazuya Tsujino, Liumin Zou
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Patent number: 11515436Abstract: A photovoltaic device includes: a p- or n-type semiconductor substrate; a p-type amorphous semiconductor film and an n-type amorphous semiconductor film on a first-face side; p-electrodes on the p-type amorphous semiconductor film; and n-electrodes on the n-type amorphous semiconductor film, wherein: the p-electrodes and the n-electrodes are arranged at intervals; the p-type amorphous semiconductor film surrounds the n-type amorphous semiconductor film in an in-plane direction of the semiconductor substrate; the n-type amorphous semiconductor film has an edge portion providing an overlapping region where the n-type amorphous semiconductor film overlaps the p-type amorphous semiconductor film; and the n-electrodes are disposed in areas of the n-type amorphous semiconductor film that are surrounded by the overlapping region.Type: GrantFiled: February 9, 2022Date of Patent: November 29, 2022Assignee: SHARP KABUSHIKI KAISHAInventors: Teruaki Higo, Chikao Okamoto, Masamichi Kobayashi, Masahito Ishii, Takeshi Mori, Yuta Matsumoto
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Publication number: 20220271178Abstract: A photovoltaic device includes: a p- or n-type semiconductor substrate; a p-type amorphous semiconductor film and an n-type amorphous semiconductor film on a first-face side; p-electrodes on the p-type amorphous semiconductor film; and n-electrodes on the n-type amorphous semiconductor film, wherein: the p-electrodes and the n-electrodes are arranged at intervals; the p-type amorphous semiconductor film surrounds the n-type amorphous semiconductor film in an in-plane direction of the semiconductor substrate; the n-type amorphous semiconductor film has an edge portion providing an overlapping region where the n-type amorphous semiconductor film overlaps the p-type amorphous semiconductor film; and the n-electrodes are disposed in areas of the n-type amorphous semiconductor film that are surrounded by the overlapping region.Type: ApplicationFiled: February 9, 2022Publication date: August 25, 2022Inventors: TERUAKI HIGO, CHIKAO OKAMOTO, MASAMICHI KOBAYASHI, MASAHITO ISHII, TAKESHI MORI, YUTA MATSUMOTO
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Patent number: 11107937Abstract: The n-type amorphous semiconductor layers 4 are on parts of that one of the faces of the semiconductor substrate 1, there being provided no p-type amorphous semiconductor layers 5 in the parts. The electrodes 6 are disposed on the n-type amorphous semiconductor layers 4. The electrodes 7 are disposed on the p-type amorphous semiconductor layers 5. The p-type amorphous semiconductor layers 5 between those n-type amorphous semiconductor layers 4 which are adjacent along an in-plane direction of the semiconductor substrate 1 include, arranged along a first direction that points from the n-type amorphous semiconductor layers 4 toward the adjacent n-type amorphous semiconductor layers 4: first and second electrode-provided regions where the electrodes 7 are disposed; and a no-electrode-provided region, between the first and second electrode-provided regions, where there are provided no electrodes 7.Type: GrantFiled: March 26, 2019Date of Patent: August 31, 2021Assignee: SHARP KABUSHIKI KAISHAInventors: Teruaki Higo, Takeshi Mori, Makoto Higashikawa
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Patent number: 11049981Abstract: A photovoltaic device (10) includes: a p-type diffusion region (11) and an n-type diffusion region (12) on the backside of a semiconductor substrate (1); electrodes (4, 5); and a wiring board (8). The electrodes (4) are disposed on the p-type diffusion region (11), and the electrodes (5) are disposed on the n-type diffusion region (12). The wiring board (8) includes a wire group (82) connected to the electrodes (4, 6) by conductive adhesion layers (7) and a wire group (83) connected to the electrodes (5) by conductive adhesion layers (7). The photovoltaic device (10) includes at least one of a first structure in which a plurality of electrodes (50) includes at least a pair of adjacent electrodes connected to a single wire and a second structure in which a plurality of electrodes (40) includes at least a pair of adjacent electrodes connected to a single wire.Type: GrantFiled: November 14, 2018Date of Patent: June 29, 2021Assignee: SHARP KABUSHIKI KAISHAInventors: Makoto Higashikawa, Teruaki Higo
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Publication number: 20210098638Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.Type: ApplicationFiled: December 11, 2020Publication date: April 1, 2021Inventors: TERUAKI HIGO, CHIKAO OKAMOTO, NAOKI ASANO, MASAMICHI KOBAYASHI, NATSUKO FUJIWARA, RIHITO SUGANUMA, TOSHIHIKO SAKAI, KAZUYA TSUJINO, LIUMIN ZOU
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Patent number: 10903379Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction. Therefore, the photovoltaic device has an improved heat resistance.Type: GrantFiled: March 7, 2016Date of Patent: January 26, 2021Assignee: SHARP KABUSHIKI KAISHAInventors: Teruaki Higo, Chikao Okamoto, Naoki Asano, Masamichi Kobayashi, Natsuko Fujiwara, Rihito Suganuma, Toshihiko Sakai, Kazuya Tsujino, Liumin Zou
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Patent number: 10516066Abstract: A photovoltaic conversion device (10) includes a semiconductor substrate (1), a passivation film (3), n-type amorphous semiconductor strips, p-type amorphous semiconductor strips (5p), and electrodes (7). The passivation film (3) is formed on one of the surfaces of the semiconductor substrate (1). The n- and p-type amorphous semiconductor strips are arranged alternately as viewed along an in-plane direction of the semiconductor substrate (1) (Y-axis direction). The p-type amorphous semiconductor strips (5p) have reduced-thickness regions (51) at some intervals as viewed along the length direction of the p-type amorphous semiconductor strips (5p) (X-axis direction). The n-type amorphous semiconductor strips have a similar structure. The electrodes (7) are provided on the p-type amorphous semiconductor strips (5p), but not in areas where the reduced-thickness regions (51) have a positive curvature r with respect to the length direction of the reduced-thickness regions (51).Type: GrantFiled: March 17, 2017Date of Patent: December 24, 2019Assignee: SHARP KABUSHIKI KAISHAInventors: Makoto Higashikawa, Toshihiko Sakai, Kazuya Tsujino, Liumin Zou, Teruaki Higo, Yuta Matsumoto
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Publication number: 20190296164Abstract: The n-type amorphous semiconductor layers 4 are on parts of that one of the faces of the semiconductor substrate 1, there being provided no p-type amorphous semiconductor layers 5 in the parts. The electrodes 6 are disposed on the n-type amorphous semiconductor layers 4. The electrodes 7 are disposed on the p-type amorphous semiconductor layers 5. The p-type amorphous semiconductor layers 5 between those n-type amorphous semiconductor layers 4 which are adjacent along an in-plane direction of the semiconductor substrate 1 include, arranged along a first direction that points from the n-type amorphous semiconductor layers 4 toward the adjacent n-type amorphous semiconductor layers 4: first and second electrode-provided regions where the electrodes 7 are disposed; and a no-electrode-provided region, between the first and second electrode-provided regions, where there are provided no electrodes 7.Type: ApplicationFiled: March 26, 2019Publication date: September 26, 2019Inventors: TERUAKI HIGO, TAKESHI MORI, MAKOTO HIGASHIKAWA
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Publication number: 20190189811Abstract: A photovoltaic device includes: a p- or n-type semiconductor substrate; a p-type amorphous semiconductor film and an n-type amorphous semiconductor film on a first-face side; p-electrodes on the p-type amorphous semiconductor film; and n-electrodes on the n-type amorphous semiconductor film, wherein: the p-electrodes and the n-electrodes are arranged at intervals; the p-type amorphous semiconductor film surrounds the n-type amorphous semiconductor film in an in-plane direction of the semiconductor substrate; the n-type amorphous semiconductor film has an edge portion providing an overlapping region where the n-type amorphous semiconductor film overlaps the p-type amorphous semiconductor film; and the n-electrodes are disposed in areas of the n-type amorphous semiconductor film that are surrounded by the overlapping region.Type: ApplicationFiled: August 14, 2017Publication date: June 20, 2019Inventors: TERUAKI HIGO, CHIKAO OKAMOTO, MASAMICHI KOBAYASHI, MASAHITO ISHII, TAKESHI MORI, YUTA MATSUMOTO
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Publication number: 20190148565Abstract: A photovoltaic device (10) includes: a p-type diffusion region (11) and an n-type diffusion region (12) on the backside of a semiconductor substrate (1); electrodes (4, 5); and a wiring board (8). The electrodes (4) are disposed on the p-type diffusion region (11), and the electrodes (5) are disposed on the n-type diffusion region (12). The wiring board (8) includes a wire group (82) connected to the electrodes (4, 6) by conductive adhesion layers (7) and a wire group (83) connected to the electrodes (5) by conductive adhesion layers (7). The photovoltaic device (10) includes at least one of a first structure in which a plurality of electrodes (50) includes at least a pair of adjacent electrodes connected to a single wire and a second structure in which a plurality of electrodes (40) includes at least a pair of adjacent electrodes connected to a single wire.Type: ApplicationFiled: November 14, 2018Publication date: May 16, 2019Inventors: MAKOTO HIGASHIKAWA, TERUAKI HIGO
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Publication number: 20190103499Abstract: A photovoltaic conversion device (10) includes a semiconductor substrate (1), a passivation film (3), n-type amorphous semiconductor strips, p-type amorphous semiconductor strips (5p), and electrodes (7). The passivation film (3) is formed on one of the surfaces of the semiconductor substrate (1). The n- and p-type amorphous semiconductor strips are arranged alternately as viewed along an in-plane direction of the semiconductor substrate (1) (Y-axis direction). The p-type amorphous semiconductor strips (5p) have reduced-thickness regions (51) at some intervals as viewed along the length direction of the p-type amorphous semiconductor strips (5p) (X-axis direction). The n-type amorphous semiconductor strips have a similar structure. The electrodes (7) are provided on the p-type amorphous semiconductor strips (5p), but not in areas where the reduced-thickness regions (51) have a positive curvature r with respect to the length direction of the reduced-thickness regions (51).Type: ApplicationFiled: March 17, 2017Publication date: April 4, 2019Inventors: MAKOTO HIGASHIKAWA, TOSHIHIKO SAKAI, KAZUYA TSUJINO, LIUMIN ZOU, TERUAKI HIGO, YUTA MATSUMOTO
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Publication number: 20180069139Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction. Therefore, the photovoltaic device has an improved heat resistance.Type: ApplicationFiled: March 7, 2016Publication date: March 8, 2018Inventors: TERUAKI HIGO, CHIKAO OKAMOTO, NAOKI ASANO, MASAMICHI KOBAYASHI, NATSUKO FUJIWARA, RIHITO SUGANUMA, TOSHIHIKO SAKAI, KAZUYA TSUJINO, LIUMIN ZOU
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Publication number: 20120103020Abstract: The present invention is a silicon refining apparatus including, in a reduced pressure vessel: a crucible capable of holding molten silicon; a heat-retaining lid capable of being placed over the crucible; and a heating device. The crucible has a lateral outer-circumferential portion provided with a first thermal-insulation material. The heat-retaining lid is a plate-like member made of carbon felt and provided with a carbon composite material at least on opposed main surfaces. The heat-retaining lid has opposed main surfaces with an opening formed to extend therethrough. The carbon composite material on the main surface of the heat-retaining lid on the crucible side is so placed as to cover an upper surface of the first thermal-insulation material when the heat-retaining lid is placed at an upper surface of the crucible.Type: ApplicationFiled: July 8, 2010Publication date: May 3, 2012Inventors: Masayuki Matsumoto, Ryuji Nouno, Ryoichi Sugioka, Miho Hojo, Satoshi Yamane, Teruaki Higo