Patents by Inventor Teruaki Katsube

Teruaki Katsube has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040014240
    Abstract: To improve photocurrent characteristics of a molecule detecting sensor, the molecule detecting sensor is formed in the steps of: depositing a first silicon layer (12) on a R-plane sapphire substrate (11); turning the first silicon layer (12) amorphous by implanting silicon ions thereinto in the vicinity of the silicon layer-sapphire substrate interface; recrystallizing an amorphous silicon layer by heat treatment; oxidizing part of the first silicon layer (12) by introducing a recrystallized silicon layer into an oxidation furnace; removing a silicon oxide film (13) formed by an oxidation; depositing a second silicon layer (15) on a seed silicon layer (14) which is a first silicon layer left after removing the steps of forming an insulator layer (3) on a single crystal silicon layer (2) which is a laminated structure made up of the seed silicon layer (14) and the second silicon layer (15); and placing an electrolyte (4) on the insulator layer.
    Type: Application
    Filed: January 3, 2003
    Publication date: January 22, 2004
    Inventors: Keigo Takeguchi, Tsuneo Sato, Teruaki Katsube, Hidekazu Uchida
  • Patent number: 5296122
    Abstract: In the manufacture of a substrate with a hydrophobic film used for a reference electrode of an ion sensor or the like, a hydrophobic film is formed on a substrate by irradiating a target consisting of a hydrophobic compound with a neutral atom beam and thereby effecting sputtering. The apparatus for effecting the sputtering comprises a target base disposed in a vacuum chamber, an atom beam gun for irradiating a target on the target base with a neutral beam, a substrate base and a shutter for controlling the passage of sputtered particles. A thin film that is manufactured is suitable for an ion sensor, such as an ISFET or the like or an enzyme sensor.
    Type: Grant
    Filed: February 18, 1992
    Date of Patent: March 22, 1994
    Assignees: Teruaki Katsube, Terumo Kabushiki Kaisha
    Inventors: Teruaki Katsube, Shuichiro Yamaguchi, Naoto Uchida, Takeshi Shimomura
  • Patent number: 5213675
    Abstract: A reference electrode for generating a reference potential on an ion sensor is disclosed. The reference electrode has a lamination film covering a surface of an electrically conductive substrate and formed by alternately laminating silver halide thin films and hydrophobic resin thin films.
    Type: Grant
    Filed: June 19, 1991
    Date of Patent: May 25, 1993
    Assignee: Terumo Kabushiki Kaisha
    Inventors: Shuichiro Yamaguchi, Takeshi Shimomura, Naoto Uchida, Teruaki Katsube, Noboru Oyama
  • Patent number: 5200053
    Abstract: A reference electrode according to the present invention includes a silver layer (2) and an insulating hydrophobic material layer (5) which is formed by atomic beam sputtering and containing silver halide dispersed therein, on the surface of a conductive substrate (1).The resulting reference electrode is of a solid type, is almost free from outflow of silver halide, can be miniaturized easily, is not affected by ion concentration, provides a stable potential and has high durability.The conductive substrate (1) may be a field effect transistor having a gate insulator film and the layer (5) may be a laminate film obtained by laminating alternately a thin layer or layers of silver halide and a thin layer or layers of insulating hydrophobic material.
    Type: Grant
    Filed: May 24, 1990
    Date of Patent: April 6, 1993
    Assignee: Terumo Kabushiki Kaisha
    Inventors: Takeshi Shimomura, Shuichiro Yamaguchi, Naoto Uchida, Takehisa Mori, Teruaki Katsube
  • Patent number: 5066383
    Abstract: A reference electrode for generating a reference potential on an ion sensor is disclosed. The reference electrode has a lamination film covering a surface of an electrically conductive substrate and formed by alternately laminating silver halide thin films and hydrophobic resin thin films.
    Type: Grant
    Filed: October 26, 1989
    Date of Patent: November 19, 1991
    Assignee: Terumo Kabushiki Kaisha
    Inventors: Shuichiro Yamaguchi, Takeshi Shimomura, Naoto Uchida, Teruaki Katsube, Noboru Oyama
  • Patent number: 4715691
    Abstract: An electrochromic display composed of a transparent electroconductive membrane, an electrochromic membrane, an ion-exchange membrane and a counter electrode in a laminated structure. The ion-exchange membrane is a bipolar ion-exchange membrane composed of at least one cation-exchange membrane layer having cation-exchange groups and at least one anion-exchange membrane layer containing anion-exchange groups in a laminated structure. The electrochromic display has a superior response speed, contrast and resolving power as well as a long service life.
    Type: Grant
    Filed: December 10, 1985
    Date of Patent: December 29, 1987
    Assignee: Tokuyama Soda Kabushiki Kaisha
    Inventors: Toshikatsu Sata, Teruaki Katsube, Yoshiya Iida