Abstract: A charged particle beam transfer method is disclosed for use in lithography processes, particularly in processes for the manufacture of semiconductor integrated circuits. A mask pattern is divided into multiple mask subfields separated from one another by a grid of boundary fields. The multiple mask subfields are preferably arrayed in a matrix of rows and columns, which are irradiated with a charged particle beam. Irradiation of the mask subfields transfers the image of each mask subfield to a transfer field on a sensitive substrate, such as the surface of a silicon wafer used in the manufacture of integrated circuits. The position of the transfer fields are adjusted so that the transfer subfields touch each other on the substrate, without being separated by the border fields. Irradiation of the multiple mask subfields is performed in the direction of the columns, in the direction of the rows, or a combination thereof.

Abstract: By causing a mask and a wafer to continuously move once or more and irradiating a plurality of small areas contained within a specific range of the mask in time sequence with a charged particle beam during each such continuous movement, the pattern in each small area is selectively projected onto a projection target area contained within a specific range of the wafer. The pattern to be projected onto one projection target area is divided and formed on a plurality of specific small areas contained within a specific range of the mask, and when the reduction ratio of the pattern projected from the mask onto the wafer is at 1/M, the continuous movement speed of the mask is set to be (N.times.

Abstract: By causing a mask and a wafer to continuously move once or more and irradiating a plurality of small areas contained within a specific range of the mask in time sequence with a charged particle beam during each such continuous movement, the pattern in each small area is selectively projected onto a projection target area contained within a specific range of the wafer. The pattern to be projected onto one projection target area is divided and formed on a plurality of specific small areas contained within a specific range of the mask, and when the reduction ratio of the pattern projected from the mask onto the wafer is at 1/M, the continuous movement speed of the mask is set to be (N.times.

Abstract: A pattern transfer method in which a part or all of a plurality of small areas on a mask are sequentially irradiated with a charged particle beam to transfer an image of a pattern provided in each of the irradiated small areas onto a radiation-sensitive substrate, e.g., a wafer. A pattern distribution condition is evaluated for each small area, and an image-formation condition of the pattern image with respect to the radiation-sensitive substrate is adjusted for each small area on the basis of predetermined information including a result of the evaluation.

Abstract: A charged particle-beam transfer mask includes a first area having a low degree of scattering or absorbing of charged particle beams, a second area higher in degree of scattering or absorbing of the charged particle beams than the first area, and dose correction member. This correction member is provided in order that when the charge particle-beams are applied to a sensitive substrate through the first and second areas, a distribution of dose in the sensitive substrate is different from that obtained without the dose correction member. Typically, the dose correction member is constituted by a film which is formed on the first area, and is higher in degree of scattering or absorbing the charged particle-beams than the first area but lower than the second area, and this film is disposed adjacent to the second area in a manner to partly cover the first area.

Abstract: A charged particle beam exposure method capable of suppressing the degradation of dimensional accuracy of exposed pattern elements due to the proximity effect and Coulomb effect defocusing. The charged particle beam exposure method is a method in which a charged particle beam is irradiated to a mask to transfer an image of a pattern formed on the mask onto a radiation-sensitive substrate.

Abstract: A pattern to be transferred onto a predetermined area on a beam-sensitive substrate is divided into a plurality of small regions on a mask, projection of a charged particle beam covering each small region is repeated for all of the small regions, and pattern transfer positions are adjusted so that transfer areas corresponding to the small regions are contacted with each other on the beam-sensitive substrate. When the pattern to be transferred to the predetermined area on the beam-sensitive substrate is divided into the plurality of small regions, the small regions having the same pattern portion after division are represented by a common small region, and, upon transferring, the pattern of the common small region is transferred onto a plurality of positions on the beam-sensitive substrate.

Abstract: An electron beam transfer apparatus in which an electron beam emitted from an electron gun (10) is led to a mask (M), and the electron beam having passed through the mask (M) is made incident on a wafer (W) at an intensity correlating with the degree of scattering of the electron beam. The potential difference between the electron gun (10) and the mask (M) is set larger than the potential difference between the electron gun (10) and the wafer (W) so that the electron beam passing through the mask (M) is incident on the wafer (W) at a lower speed than that of the electron beam at the time passing through the mask (M). Thus, it is possible to suppress the reduction of the sensitivity of a resist coated on the wafer (W) and the heat generation at the wafer (W) while satisfactorily obtaining the desired effect of the scattering mask and conditions advantageous to the electron beam as a charged particle beam.