Patents by Inventor Teruhiko Hirasawa

Teruhiko Hirasawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11260480
    Abstract: A fastening apparatus includes a fastening device (1, 3) that heats in a non-contacting state, and then applies pressure to, a shaft part (11b) or shaft body (111) while it is inserted through the through holes (W10, W20) of workpieces (W1, W2), thereby forming at least a second head part (11c) of a fastener (11). The fastening device (1, 3) includes: a fastening die (15) that forms the second head part (11c); and a shaft-part pressure-applying device (9) that applies the pressure to the fastening die (15). A determining device (5) determines whether the fastener (11) is defective or not by calculating a load curve defined by the time and the load during which the pressure was applied and then determining whether an amount of change per unit of time in the load curve after a reference load has been exceeded is within a range of a predetermined reference value.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: March 1, 2022
    Assignee: DAI-ICHI DENTSU LTD.
    Inventors: Takeshi Eguchi, Takayuki Kitou, Teruhiko Hirasawa, Hidenori Sato
  • Publication number: 20210046593
    Abstract: A fastening apparatus includes a fastening device (1, 3) that heats in a non-contacting state, and then applies pressure to, a shaft part (11b) or shaft body (111) while it is inserted through the through holes (W10, W20) of workpieces (W1, W2), thereby forming at least a second head part (11c) of a fastener (11). The fastening device (1, 3) includes: a fastening die (15) that forms the second head part (11c); and a shaft-part pressure-applying device (9) that applies the pressure to the fastening die (15). A determining device (5) determines whether the fastener (11) is defective or not by calculating a load curve defined by the time and the load during which the pressure was applied and then determining whether an amount of change per unit of time in the load curve after a reference load has been exceeded is within a range of a predetermined reference value.
    Type: Application
    Filed: June 28, 2018
    Publication date: February 18, 2021
    Inventors: Takeshi EGUCHI, Takayuki KITOU, Teruhiko HIRASAWA, Hidenori SATO
  • Patent number: 6815605
    Abstract: There can be provided according to the present invention a silicon single crystal produced according to Czochralski method to which Ga (gallium) is added as a dopant characterized in that a resistivity is 5&OHgr;.cm to 0.1&OHgr;.cm and a method for producing a silicon single crystal to which Ga (gallium) is added as a dopant according to Czochralski method characterized in that Ga is added in a silicon melt in a crucible, a seed crystal is brought into contact with the silicon melt and is pulled with rotating to grow a silicon single crystal ingot. Thereby, a silicon single crystal and silicon single crystal wafer and a method for producing them that can produce a solar cell characterized in that photo-degradation is not caused even in the single crystal having high oxygen concentration and a conversion efficiency of optical energy is very high.
    Type: Grant
    Filed: January 18, 2001
    Date of Patent: November 9, 2004
    Assignees: Shin-Etsu Handotai Co., Ltd., Shin-Etsu Chemical Co., Ltd.
    Inventors: Takao Abe, Teruhiko Hirasawa, Katsushi Tokunaga, Tetsuya Igarashi, Masafumi Yamaguchi
  • Patent number: 6313398
    Abstract: There are disclosed multi-crystalline silicon which is added with Ga (gallium) as a dopant and a method for producing Ga-doped multi-crystalline silicon, which comprises adding Ga to silicon melt in a crucible, which is melted by heating, and cooling the silicon melt to allow growth of multi-crystalline silicon. According to the present invention, there are provided multi-crystalline silicon and a multi-crystalline silicon wafer for producing solar cells showing stable conversion efficiency for light energy without causing photodegradation as well as methods for producing them.
    Type: Grant
    Filed: June 15, 2000
    Date of Patent: November 6, 2001
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Toru Yamada, Katsushi Tokunaga, Teruhiko Hirasawa
  • Patent number: 5667585
    Abstract: Proposed is a low-cost method for the preparation of a wire-formed crystal of silicon having a diameter of 1 mm or smaller, in which a vertically held starting rod of silicon is melted at one end portion by high-frequency induction heating, a seed crystal is brought into contact with the molten portion and then the seed crystal and the starting silicon rod are pulled apart in the vertical direction at a controlled velocity with a controlled high-frequency power input so that the melt of silicon drawn by the seed crystal is solidified and crystallized into the form of a wire.
    Type: Grant
    Filed: December 27, 1995
    Date of Patent: September 16, 1997
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsuguo Fukuda, Susumu Sakaguchi, Tadashi Kamioka, Toru Yamada, Teruhiko Hirasawa
  • Patent number: 5431741
    Abstract: A novel structure of a silicon solar cell is disclosed, which can be prepared at an outstandingly low cost but can still exhibit good efficiency for the conversion of solar energy to electricity. The silicon solar cell comprises, as an integral body:(a) an electrically insulating substrate plate of, e.g., glass or a ceramic;(b1) a first group of metal contact lines formed in parallel with each other on the substrate surface to jointly serve as an electrode; (b2) a second group of metal contact lines formed in parallel with each other on the substrate surface to jointly serve as a counterelectrode, each of the metal contact lines of the second group being disposed between two metal contact lines of the first group, maintaining electric insulation therebetween; and(c) a plural number of wires of silicon semiconductor, each of which perpendicularly crosses each of the metal contact lines of the first and second groups in direct contact therewith.
    Type: Grant
    Filed: December 13, 1993
    Date of Patent: July 11, 1995
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Susumu Sakaguchi, Toru Yamada, Tadashi Kamioka, Teruhiko Hirasawa