Abstract: An object to provide an insulating film for a semiconductor device, which has characteristics of low permittivity, a low leak current, and high mechanical strength, undergoes small time-dependent change of these characteristics, and has excellent water resistance, and to provide a manufacturing apparatus of the same, and a manufacturing method of the semiconductor device using the insulating film.

Abstract: A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.

Abstract: There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.

Abstract: A coating composition including ultrafine silica particles having an average particle diameter of 15 nm or less and fluororesin particles, in which ultrafine silica particle content is 0.1 to 5 mass %, and the mass ratio of the ultrafine silica particles to the fluororesin particles is 70:30 to 95:5. According to the coating composition, there is provided a coating film which makes it possible to readily coat the surfaces of various articles without impairing the color tone and the texture and which is excellent in antisoiling performance and durability.

Abstract: There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.

Abstract: A low dielectric constant material having an excellent water resistance obtained by heat-treating a borazine compound of the formula (1-2): or an inorganic or organic compound having a group derived from the borazine compound (1-2) to undergo a condensation reaction, thereby producing an oligomer or polymer, wherein R1 to R6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group, or a group of the formula: Si(OR7)(OR8)(OR9), and at least one of R1 to R6 is not hydrogen atom.

Abstract: A coating composition according to the present invention includes silica microparticles and fluorine resin particles. The coating film formed on a surface of an article includes a silica film composed of the silica microparticles, in which the fluorine resin particles are dotted so as to partially expose from a surface of the silica film, an exposed area of the silica film is larger than an exposed area of the fluorine resin particles, and amount of natrium contained in the coating composition is made equal to or less than 0.5% in a ratio by weight to contained amount of the silica microparticles.

Abstract: The present invention provides a composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, R1 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is hydrogen atom; R2 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is alkyl group, alkenyl group or alkynyl group. By using the composition, physical properties such as low dielectric constant property and mechanical strength of the thin film produced from a borazine-ring-containing compound can be improved.

Abstract: The present invention relates to a radome which has excellent transmission loss of radio waves and structural strength, which can be easily produced, and which has favorable workability, and a method of producing the same. The radome includes an olefin woven material and a glass cloth, in which the olefin woven material and the glass cloth are impregnated with a matrix resin to be integrated with each other, and the glass cloth is disposed closer to an inner side of the radome than the olefin woven material. As the olefin woven material, a woven material formed of an ultrahigh molecular weight polyethylene fiber can be used. As the matrix resin, an epoxy resin, a vinyl ester resin, an unsaturated polyester resin, or a silicone resin can be used.

Abstract: A CFRP core including a CFRP layer has a primary through hole. An adhesive member coats a wall surface of the primary through hole, and has a secondary through hole extending within the primary through hole. An electrically conductive layer is formed on a wall surface of the secondary through hole for electrically connecting upper and lower signal interconnections via the secondary through hole. A coating layer coats an outer peripheral edge of the CFRP core as seen in a plan view. Thereby, a printed interconnection board with low thermal expansivity and high thermal conductivity capable of preventing exfoliation of a CFRP layer on a side surface of a substrate using CFRP as a core, as well as preventing falling-off of carbon powders from the CFRP layer, and a method of manufacturing the same can be obtained.

Abstract: A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600° C. In the following formula, Ra and Rc independently represent alkyl group or acyl group; Rb represents hydrogen atom or alkyl group; and n represents an integer of 1 to 5.

Abstract: An object of the invention is to provide a printed circuit board that has an excellent heat dissipation performance and excellent reliability, and its manufacturing method. The printed circuit board includes: prepregs (2a) and (2b) being cured after each covering the surfaces of a metal plate (1) provided with first throughholes (1a) therein and the inner walls of the first throughholes (1a); prepregs (4a) and (4b) being cured after glass clothes (3a) and (3b) are sandwiched between the prepregs (2a) and (2b), and the prepregs (4a) and (4b), respectively; and second throughholes (8) that connect wiring layers (7a) and (7c), and (7b) and (7d) provided on both surfaces of prepregs (6a) and (6b), respectively. The prepregs (2a) and (2b) and the prepregs (4a) and (4b) are characterized in that they contain inorganic filler. Furthermore, the prepregs (2a) and (2b) and the prepregs (4a) and (4b) may contain elastomer.

Abstract: The present invention provides a method of manufacturing a film including the steps of using a compound with borazine skeleton (preferably a compound expressed by a chemical formula (1) below (where R1-R6 may be identical with or different from each other, and are each independently selected from a group consisting of a hydrogen atom, and an alkyl group, an alkenyl group and an alkynyl group each having a carbon number of 1-4, on condition that at least one of R1-R6 is not the hydrogen atom)) as a raw material, and forming the film on a substrate by using a chemical vapor deposition method, characterized in that a negative charge is applied to a site for placing the substrate, and a semiconductor device utilizing a film manufactured by the method.

Abstract: The present invention provides a plasma CVD device including means for supplying a compound with borazine skeleton, a plasma generator for generating a plasma, and means for applying a negative charge to an electrode for placing a substrate. According to the present invention, it is possible to provide a plasma CVD device which stably provides a low dielectric constant and a high mechanical strength over a long period of time, reducing the amount of a gas component (outgas) emitted in heating the film, and causing no trouble in a device manufacturing process.

Abstract: A raw material of a cover layer as a material for forming a fine pattern is applied as to cover a resist pattern. Then, a component in the cover layer permeates into the resist pattern. Thereby, a mixed layer having a lower softening point than that of the resist pattern is formed. Then, a heat treatment is performed at a temperature lower than the softening point of the resist pattern and higher than that of the mixed layer. Thereby, the mixed layer is softened and a width of the mixed layer becomes large. As a result, a space of the resist pattern is narrowed. Therefore, a fine pattern is formed having a smaller size than the size limit due to the exposure wavelength.

Abstract: There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.

Abstract: A via-filling material includes a polymer containing a repeating unit represented by wherein R1 one of hydrogen, fluorine, chlorine, bromine, and methyl group; R2 is one of hydrogen, a C1-3 alkyl group, and a C1-4 alkyl group in which the hydrogen is replaced by at least one of fluorine, chlorine, and bromine; and X is —C(?O)O— or —S(?O)2O—. This via-filling material does not generate deposits around an opening of a via hole during plasma etching and provides a semiconductor integrated circuit with high reliability, even when a trench wider than the via hole is formed by plasma etching around the via hole filled with the via-filling material.

Abstract: A light-block film is formed on a substrate, and a chemically amplified resist film is then formed on the light-block film. The chemically amplified resist film includes a photosensitive acid generator which generates an acid upon irradiation with activating light or radiation, and mainly contains a first resin that becomes soluble in bases by action of the acid. Next, a protective film is formed on the chemically amplified resist film and thereby yields a mask blank. The protective film is formed by dissolving a second resin and the photosensitive acid generator in a solvent that does not substantially dissolve the chemically amplified resist film to prepare a solution, and applying the solution to the chemically amplified resist film.

Abstract: A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600° C. In the following formula, Ra and Rc independently represent alkyl group or acyl group; Rb represents hydrogen atom or alkyl group; and n represents an integer of 1 to 5.

Abstract: A process for preparing a low dielectric constant material comprising heat-treating a compound containing a borazine skeleton structure of the formula: wherein at least one of R1 to R6 is a bond which binds said borazine skeleton structure to a molecule of a inorganic or organic compound, and/or R1 to R6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group or a group of the formula: Si(OR7)(OR8)(OR9), and at least one of R1 to R6 is not a hydrogen atom.