Abstract: In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm and whose life is 5500 hours or more, optical components whose organic volatile gas generation measured by GC/MS is 10 ?g/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 300 ?g/g or less at 15° C.

Abstract: A fiber module includes: a package having a structure which allows sealing of the inside of the package; and an optical fiber having a predetermined length and being fixed to the package in such a manner that the first end of the optical fiber appears inside the package. The cladding is exposed (bare) in a vicinity of the second end, and the optical fiber other than a portion of the cladding in the vicinity of the second end is coated with at least one of a metal and an inorganic material.

Abstract: In a method for producing a laser element, a brazing material is placed between a nitride-based semiconductor laser bar and a fixation surface of a heat sink, where the brazing material contains gold and one of tin and silicon as main components, the nitride-based semiconductor laser bar has at least three light-emission points formed on a substrate, the heat sink is made of copper or copper alloy, and the fixation surface has a predetermined shape. Then, the nitride-based semiconductor laser bar is fixed to the fixation surface of the heat sink by melting and solidifying the brazing material while pressing the nitride-based semiconductor laser bar toward the heat sink with a tool having a shape corresponding to the predetermined shape of the fixation surface.

Abstract: A laser apparatus includes: a block having a stepped shape formed with a plurality of mount portions which have different heights and are arranged in a first direction parallel to an optical axis in order of height; and a plurality of a collimator-lens array and a plurality of laser diodes, where the collimator-lens array in each of the plurality of sets is constituted by a plurality of collimator lenses which are arranged along a second direction and collimate laser beams emitted from the plurality of laser diodes in the set. The plurality of laser diodes and the collimator-lens array in each of the plurality of sets are fixed to one of the plurality of mount portions so that light-emission points of the plurality of laser diodes in the set are aligned in a third direction.

Abstract: In a laser apparatus, a plurality of semiconductor laser elements respectively emit laser beams; a multimode optical fiber has a light-entrance end and a light-emission end; an optical condensing system collects the laser beams emitted from the plurality of semiconductor laser elements, and couples the collected laser beams to the light-entrance end of the multimode optical fiber; and a protection member is arranged at the light-emission end of the multimode optical fiber, protects the light-emission end from the atmosphere, and has a light-emission window located at at least a predetermined distance from the light-emission end.

Abstract: A laser apparatus includes: a plurality of laser diodes respectively having light-emission points and being fixed to a block so that the light-emission points are aligned along a direction; and a collimator-lens array integrally formed to contain a plurality of collimator lenses which are arranged along a direction and respectively collimate laser beams emitted from the plurality of laser diodes. The block has a lens-setting surface which is flat, perpendicular to optical axes of the plurality of laser diodes, and located on the forward side of the plurality of laser diodes at a predetermined distance from the light-emission points, and the collimator-lens array is fixed to the block so that an end surface of the collimator-lens array is in contact with the lens-setting surface.

Abstract: In a laser-light source: submounts each being made of a material having a thermal expansion coefficient of 3.5 to 6.0×10−6/° C. and having a thickness of 200 to 400 micrometers are separately formed on a heat-dissipation block made of copper or copper alloy; a single-cavity nitride-based semiconductor laser chips are respectively mounted junction-side-down on the corresponding submounts; an optical condenser system collects laser beams emitted from the semiconductor laser chips, and couples the collected laser beams to a multimode optical fiber. A bonding surface of each semiconductor laser chip is bonded to a bonding surface of a corresponding submount through a metalization layer and an Au—Sn eutectic solder layer each of which is divided into areas.

Abstract: In a disclosed laser module, a usage amount of organic adhesive is set to no more than 1.0 g/ml. Thus, an equilibrium density of outgas components from the adhesive after an air removal treatment is less than 1000 ppm. In another laser module, a heat sink at which a semiconductor laser element is adhered on a submount, an electrode terminal wire-connected with the laser element, a photodiode wire-connected with the electrode terminal, and a zeolite adsorbent are fixedly provided on a stem. These are ring-welded in a container in a dry air atmosphere (80% nitrogen, 20% oxygen). In still another laser module, sixteen multiplexed lasers are disposed in a container. The container is connected with an air circulation apparatus, which is provided with a filter for removing contaminants, a rotary pump for circulating inert gas, and a valve for controlling replenishment of the gas.

Abstract: On a heat sink having a low thermal resistance, an Ni thin film layer is formed at a film thickness of 2 &mgr;m to 6 &mgr;m. On the face to which a semiconductor light emitting element is to be bonded and the face on the side from which light is to be emitted, a barrier metallic layer is formed at a film thickness of 50 nm to 150 nm in the region as wide as four times the area of the bonding face of the semiconductor light emitting element. A wettability improving metallic layer is formed at a film thickness of 50 nm to 150 nm. The semiconductor light emitting element stacks layers of AlGaAs, GaAs, GaAsP, and InGaAs, all on a GaAs substrate. An N electrode includes AuGe/Ni/Au , and a P electrode includes Au/Pt/Ti/Pt/Ti and is pressed and soldered against the bonding face of the heat sink.

Abstract: A plurality of multi-cavity laser diode chips, each having a plurality of light emitting points, are fixed side by side and form a laser diode array.

Abstract: A package base for a semiconductor element is made of a carbon composite material. The mounting surface of the package base includes a first area on which at least one first element including at least one semiconductor element is to be mounted, and a second area on which at least one second element including at least a terminal for electrode wiring is to be mounted. Preferably, the carbon composite material is a high-density, isotropic carbon-fiber composite material. In addition, the mounting surface may have a step change in surface elevation for alignment of either of the at least one first element and the at least one second element.

Abstract: Disclosed herein is a semiconductor laser having a first transparent dielectric film formed on at least either a front or rear facet through which oscillating light passes, a second transparent dielectric film formed on the first transparent dielectric film, and a third transparent dielectric film formed on the second transparent dielectric film. The first transparent dielectric film consists of aluminum dioxide (Al2O3). The second transparent dielectric film consists of titanium oxide (TiO2) or tantalum pentoxide (Ta2O5), and the third transparent dielectric film consists of silicon dioxide (SiO2). In this semiconductor laser, the following relationships are satisfied: 0.09&lgr;≦n1d1≦0.15&lgr; 0.20&lgr;≦n2d2≦0.22&lgr; 0.225&lgr;≦n3d3≦0.