Abstract: A suspender for suspending polycrystalline rods steadfastly and easily in a furnace for single-crystal fabrication by the recharge or additionally charged method is disclosed. The suspender includes a plate which is made of molybdenum or SiC-coated graphite and a stick perpendicularly connected to the center of the plate. Both sides of the openings are arms for supporting the polycrystalline rods, thereby suspending the polycrystalline rods vertically in the opening. Means for preventing the polycrystalline rods from slipping out of the suspender are provided at ends of the arms. Therefore, the polycrystalline rods will not slip from the opening even though the plate is inclined. The suspender is suspended in the furnace by a stick. The polycrystalline rods require few tasks to form grooves and install on the suspender, thus decreasing the process time and manufacturing cost.

Abstract: Regulating cylinder unit is divided into three parts, a third regulating cylinder shaped essentially like a cylinder and installed on the protection cylinder; a first regulating cylinder and a second regulating cylinder which are shaped like reversed truncated cones with different diameters and are capable of engaging with the third regulating cylinder. In addition, the second and third regulating cylinders are brought together in a preset ordering, that is, a flange formed at the outer peripheral rim of the upper end of the second regulating cylinder is engaged with a stepped portion of the third regulating cylinder, and a flange formed at the outer peripheral rim of the upper end of the first regulating cylinder is engaged with a flange formed at the inner peripheral rim of the lower end of the second regulating cylinder.

Abstract: This invention provides a method for pulling a single crystal silicon whose diameter is more than 200 mm. The single crystal silicon pulled by the method of this invention has a desired oxygen concentration and a uniform oxygen concentration distribution along its longitudinal axis. In the process of this invention, the single crystal silicon and the quartz crucible are driven to rotate in reverse directions, and the rotation speed of the single crystal silicon is set within the range of 8 to 16 rpm and to be more than twice the rotating speed of the crucible. The rotation speed of the crucible is set to be at its minimum value during pulling a body portion which begins from the beginning end of the single-crystal body and terminates at a location apart from the beginning end within a distance of 10% of the total length of the single-crystal body. Subsequently, the rotation speed of the crucible is gradually raised and is set to no more than a maximum value of 8 rpm.

Abstract: A semiconductor single crystal lift device which comprises a crucible for melting materials for forming semiconductor single crystals and a radiation screen disposed at an upper portion of the crucible and formed of a reversed-cone-shaped adiabatic tube surrounding a lift zone, the apparatus being adopted for lifting up the semiconductor single crystal from a melt in the crucible, in which the radiation screen is divided into more than three adiabatic members, at least part of the adiabatic members being configured in a detachable fashion so that an adiabatic nature of the radiation screen can be partly altered.