Patents by Inventor Teruhiro KOSHIBA

Teruhiro KOSHIBA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Diode including a Zener diode region
    Patent number: 10629594
    Abstract: A diode according to the present invention includes a semiconductor layer of a first conductivity type having an impurity concentration of 1×1016 cm?3 to 2.4×1017 cm?3, a Zener diode region of a second conductivity type formed selectively in the semiconductor layer and forming a pn junction with the semiconductor layer, a Schottky metal disposed on the semiconductor layer, forming a Schottky junction with the semiconductor layer, and having a work function of 3 eV to 6 eV, and a JBS (junction barrier Schottky) structure including a plurality of second conductivity type regions formed selectively in the Schottky junction region of the semiconductor layer.
    Type: Grant
    Filed: November 17, 2017
    Date of Patent: April 21, 2020
    Assignee: ROHM CO., LTD.
    Inventors: Kohei Makita, Teruhiro Koshiba
  • DIODE
    Publication number: 20180076196
    Abstract: A diode according to the present invention includes a semiconductor layer of a first conductivity type having an impurity concentration of 1×1016 cm?3 to 2.4×1017 cm?3, a Zener diode region of a second conductivity type formed selectively in the semiconductor layer and forming a pn junction with the semiconductor layer, a Schottky metal disposed on the semiconductor layer, forming a Schottky junction with the semiconductor layer, and having a work function of 3 eV to 6 eV, and a JBS (junction barrier Schottky) structure including a plurality of second conductivity type regions formed selectively in the Schottky junction region of the semiconductor layer.
    Type: Application
    Filed: November 17, 2017
    Publication date: March 15, 2018
    Applicant: ROHM CO., LTD.
    Inventors: Kohei MAKITA, Teruhiro KOSHIBA
  • Diode
    Patent number: 9842836
    Abstract: A diode according to the present invention includes a semiconductor layer of a first conductivity type having an impurity concentration of 1×1016 cm?3 to 2.4×1017 cm?3, a Zener diode region of a second conductivity type formed selectively in the semiconductor layer and forming a pn junction with the semiconductor layer, a Schottky metal disposed on the semiconductor layer, forming a Schottky junction with the semiconductor layer, and having a work function of 3 eV to 6 eV, and a JBS (junction barrier Schottky) structure including a plurality of second conductivity type regions formed selectively in the Schottky junction region of the semiconductor layer.
    Type: Grant
    Filed: April 13, 2016
    Date of Patent: December 12, 2017
    Assignee: ROHM CO., LTD.
    Inventors: Kohei Makita, Teruhiro Koshiba
  • DIODE
    Publication number: 20160307893
    Abstract: A diode according to the present invention includes a semiconductor layer of a first conductivity type having an impurity concentration of 1×1016 cm?3 to 2.4×1017 cm?3, a Zener diode region of a second conductivity type formed selectively in the semiconductor layer and forming a pn junction with the semiconductor layer, a Schottky metal disposed on the semiconductor layer, forming a Schottky junction with the semiconductor layer, and having a work function of 3 eV to 6 eV, and a JBS (junction barrier Schottky) structure including a plurality of second conductivity type regions formed selectively in the Schottky junction region of the semiconductor layer.
    Type: Application
    Filed: April 13, 2016
    Publication date: October 20, 2016
    Applicant: ROHM CO., LTD.
    Inventors: Kohei MAKITA, Teruhiro KOSHIBA