Abstract: The present invention relates to a raw material of an organoruthenium compound for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method. This organoruthenium compound is an organoruthenium compound represented by the following Formula 1 and including a trimethylenemethane-based ligand (L1) and three carbonyl ligands coordinated to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand L1 is represented by the following Formula 2: wherein a substituent R of the ligand L1 is hydrogen, or any one of an alkyl group, a cyclic alkyl group, an alkenyl group, an alkynyl group, and an amino group having a predetermined number of carbon atoms.

Abstract: The present invention relates to a raw material of an organoruthenium compound for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method. This organoruthenium compound is an organoruthenium compound represented by the following Formula 1 and including a trimethylenemethane-based ligand (L1) and three carbonyl ligands coordinated to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand L1 is represented by the following Formula 2: wherein a substituent R of the ligand L1 is hydrogen, or any one of an alkyl group, a cyclic alkyl group, an alkenyl group, an alkynyl group, and an amino group having a predetermined number of carbon atoms.

Abstract: The present invention relates to a raw material for chemical deposition for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, containing a ruthenium complex represented by the following Chemical Formula 1. In Chemical Formula 1, ligands L1 and L2 coordinated to ruthenium are represented by the following Chemical Formula 2. The raw material for chemical deposition according to the present invention can be formed into a high quality thin film even if a reaction gas containing an oxygen atom is not used. wherein R1 to R12, which are substituents of the ligands L1 and L2, are each independently any one of a hydrogen atom, and a linear or branched alkyl group having a carbon number of 1 or more and 4 or less.

Abstract: The present invention relates to a raw material for chemical deposition for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, containing a ruthenium complex represented by the following Chemical Formula 1. In Chemical Formula 1, ligands L1 and L2 coordinated to ruthenium are represented by the following Chemical Formula 2. The raw material for chemical deposition according to the present invention can be formed into a high quality thin film even if a reaction gas containing an oxygen atom is not used. wherein R1 to R12, which are substituents of the ligands L1 and L2, are each independently any one of a hydrogen atom, and a linear or branched alkyl group having a carbon number of 1 or more and 4 or less.

Abstract: A metal ink containing metal particles including silver, a protective agent A including an amine compound, and a protective agent B including a fatty acid. The metal ink is configured such that the protective agent A includes at least one C4-12 amine compound, and the protective agent B includes at least one C22-26 fatty acid. It is preferable that the amine compound content is 0.2 mmol/g or more and 1.5 mmol/g or less on a silver particle mass basis. In addition, it is preferable that the fatty acid content is 0.01 mmol/g or more and 0.06 mmol/g or less on a silver particle mass basis.

Abstract: A metal paste formed by kneading a solid content including silver particles and a solvent, in which the solid content includes silver particles containing silver particles having a particle size of 100 to 200 nm by 30% or more based on the number of particles, the silver particles have an average particle size of 60 to 800 nm as a whole, the silver particles constituting the solid content are bound with an amine compound having 4 to 8 carbon atoms in total as a protective agent, and the metal paste contains as an additive a high-molecular-weight ethyl cellulose having a number average molecular weight of 40000 to 90000. Since the metal paste contains a high-molecular-weight ethyl cellulose, a sintered body having a low resistance can be maintained while printability is improved. The metal paste has favorable printability, and can form a sintered body having a low resistance even in a low temperature region of 150° C. or lower.

Abstract: A metal ink containing metal particles including silver, a protective agent A including an amine compound, and a protective agent B including a fatty acid. The metal ink is configured such that the protective agent A includes at least one C4-12 amine compound, and the protective agent B includes at least one C22-26 fatty acid. It is preferable that the amine compound content is 0.2 mmol/g or more and 1.5 mmol/g or less on a silver particle mass basis. In addition, it is preferable that the fatty acid content is 0.01 mmol/g or more and 0.06 mmol/g or less on a silver particle mass basis.

Abstract: A metal paste formed by kneading a solid content including silver particles and a solvent, in which the solid content includes silver particles containing silver particles having a particle size of 100 to 200 nm by 30% or more based on the number of particles, the silver particles have an average particle size of 60 to 800 nm as a whole, the silver particles constituting the solid content are bound with an amine compound having 4 to 8 carbon atoms in total as a protective agent, and the metal paste contains as an additive a high-molecular-weight ethyl cellulose having a number average molecular weight of 40000 to 90000. Since the metal paste contains a high-molecular-weight ethyl cellulose, a sintered body having a low resistance can be maintained while printability is improved. The metal paste has favorable printability, and can form a sintered body having a low resistance even in a low temperature region of 150° C. or lower.