Abstract: A detector includes an active layer containing a quantum well or quantum dots and the detector can shift a detection wavelength by applying a voltage to the active layer. The detector has a reference wavelength to be referred to as a criterion for calibration or correction of the detection wavelength within a range in which the detection wavelength is shifted. A method of calibrating or correcting with the detector, a detection wavelength with the reference wavelength being defined as the criterion is provided.

Abstract: A quantum cascade laser includes a semiconductor substrate and an active layer having a cascade structure, in which unit layered bodies, each composed of a quantum well light emitting layer and an injection layer, are stacked, wherein the unit layered body has a subband level structure having an upper laser level, a lower laser level, and a relaxation miniband composed of at least two energy levels with an energy spacing smaller than the energy difference (EUL) between the upper laser level and the lower laser level, the energy width of the relaxation miniband is smaller than the energy (ELO?EUL) obtained by subtracting the energy difference (EUL) from the energy (ELO) of longitudinal optical phonons, and electrons subjected to the intersubband transition are relaxed in the relaxation miniband and are injected into a quantum well light emitting layer in a subsequent unit layered body.

Abstract: A QCL (10) includes a first electrode (15), a first contact layer (11) that is in contact with the first electrode (15) and is made of a first compound semiconductor, a second electrode (14) having a polarity opposite to that of the first electrode (15), a second contact layer (13) that is in contact with the second electrode (14) and is made of a second compound semiconductor, and an active layer (12) disposed between the first contact layer (11) and the second contact layer (13) and including two or more active layer units. Each of the active layer units includes one or more quantum well layers made of a third compound semiconductor and one or more barrier layers made of a fourth compound semiconductor, and each of the quantum well layers and each of the barrier layers are alternately stacked.

Abstract: A quantum dot infrared detector includes a photoelectric conversion layer. The photoelectric conversion layer includes a quantum dot stacked structure in which quantum dot layers are stacked, each quantum dot layer including at least quantum dots, a underlayer for the quantum dots, and a partial cap layer at least partially covering the quantum dots. The underlayer is AlxGa1-xAs (0?x<1), and the partial cap layer is AlyGa1-yAs (0?y<1). When the lower of x and y is represented by z and a size of the quantum dots in a direction perpendicular to a stacking direction of the quantum dot stacked structure is represented by R (nm), z satisfies z?0.14×R?1.6, and the size of the quantum dots in the stacking direction is less than or equal to 0.5R.

Abstract: A nitride semiconductor device includes a GaN substrate in which an angle between a principal surface and an m-plane of GaN is ?5° or more and +5° or less, a first intermediate layer disposed on the principal surface of the substrate and made of AlzGa(1?z)N, 0?z?1, and a second intermediate layer disposed on a principal surface of the first intermediate layer, having an Al content different from that of the first intermediate layer, and made of Alx1Iny1Ga(1?x1?y1)N, 0?x1?1, 0?y1?1. A quantum cascade laser includes the nitride semiconductor device.

Abstract: A detector includes an active layer containing a quantum well or quantum dots and the detector can shift a detection wavelength by applying a voltage to the active layer. The detector has a reference wavelength to be referred to as a criterion for calibration or correction of the detection wavelength within a range in which the detection wavelength is shifted. A method of calibrating or correcting with the detector, a detection wavelength with the reference wavelength being defined as the criterion is provided.

Abstract: A photodetector including a substrate, a light absorption layer arranged over the substrate, the light absorption layer including a stack including a semiconductor layer that absorbs light of a wavelength having an electric field vector parallel to a normal direction of a substrate surface, a lower contact layer arranged on a first side of the light absorption layer, a lower electrode contacting with the lower contact layer, an upper contact layer arranged on a second side of the light absorption layer, and an upper electrode contacting with the upper contact layer. An uneven structure including polarization-selective shapes of projections or depressions on the second side of the upper contact layer is provided, the shapes of projections or depressions each having a size of a wavelength or less of incident light in the semiconductor layer and half the wavelength or greater and being periodically arranged in at least one direction.

Abstract: A quantum cascade laser includes a semiconductor substrate and an active layer having a cascade structure, in which unit layered bodies, each composed of a quantum well light emitting layer and an injection layer, are stacked, wherein the unit layered body has a subband level structure having an upper laser level, a lower laser level, and a relaxation miniband composed of at least two energy levels with an energy spacing smaller than the energy difference (EUL) between the upper laser level and the lower laser level, the energy width of the relaxation miniband is smaller than the energy (ELO?EUL) obtained by subtracting the energy difference (EUL) from the energy (ELO) of longitudinal optical phonons, and electrons subjected to the intersubband transition are relaxed in the relaxation miniband and are injected into a quantum well light emitting layer in a subsequent unit layered body.

Abstract: A nitride semiconductor device includes a GaN substrate in which an angle between a principal surface and an m-plane of GaN is ?5° or more and +5° or less, a first intermediate layer disposed on the principal surface of the substrate and made of AlzGa(1-z)N (0?z?1), and a second intermediate layer disposed on a principal surface of the first intermediate layer, having an Al content different from that of the first intermediate layer, and made of Alx1Iny1Ga(1-x1-y1) (0?x1?1, 0?y1?1). A quantum cascade laser includes the nitride semiconductor device.

Abstract: A QCL (10) includes a first electrode (15), a first contact layer (11) that is in contact with the first electrode (15) and is made of a first compound semiconductor, a second electrode (14) having a polarity opposite to that of the first electrode (15), a second contact layer (13) that is in contact with the second electrode (14) and is made of a second compound semiconductor, and an active layer (12) disposed between the first contact layer (11) and the second contact layer (13) and including two or more active layer units. Each of the active layer units includes one or more quantum well layers made of a third compound semiconductor and one or more barrier layers made of a fourth compound semiconductor, and each of the quantum well layers and each of the barrier layers are alternately stacked.

Abstract: An antireflective structure having a higher antireflective effect compared with those of conventional antireflective structures is produced by a simple process. The antireflective structure (10) includes a plurality of concavities (2a) each having a plurality of convexities (1a) thereon, and a pitch between the plurality of convexities (1a) and a pitch between the plurality of concavities (2a) are smaller than a wavelength of light incident to the antireflective structure (10).

Abstract: A photodetector including a substrate, a light absorption layer arranged over the substrate, the light absorption layer including a stack including a semiconductor layer that absorbs light of a wavelength having an electric field vector parallel to a normal direction of a substrate surface, a lower contact layer arranged on a first side of the light absorption layer, a lower electrode contacting with the lower contact layer, an upper contact layer arranged on a second side of the light absorption layer, and an upper electrode contacting with the upper contact layer. An uneven structure including polarization-selective shapes of projections or depressions on the second side of the upper contact layer is provided, the shapes of projections or depressions each having a size of a wavelength or less of incident light in the semiconductor layer and half the wavelength or greater and being periodically arranged in at least one direction.

Abstract: A semiconductor light-emitting element according to the present invention includes an In(X0)Ga(1-X0)N (0.25?X?0.35) template and a quantum well active layer containing Al(X2)In(Y2)Ga(1-X2-Y2)N (0?X2?1, 0?Y2?1) as a well layer.

Abstract: A semiconductor light-emitting element according to the present invention includes an In(X0)Ga(1-X0)N (0.25?X?0.35) template and a quantum well active layer containing Al(X2)In(Y2)Ga(1-X2-Y2)N (0?X2?1, 0?Y2?1) as a well layer.

Abstract: A display control device (2) disclosed includes (i) a display/non-display video image determining section (70) that determines, on the basis of (i) video image information about a video image displayed by a display device (400) and (ii) viewing mode information indicative of a viewer's desired mode of viewing a video image, whether the video image displayed by the display device (400) is a display video image or a non-display video image and (ii) a shutter operation control section (80) that closes a right-eye shutter and a left-eye shutter of a liquid crystal shutter (500) when a video image determined as a non-display video image, which is unnecessary for the viewing mode and which is thus not to be displayed to the viewer, is displayed by the display device (400). The display control device (2) thus closes the right-eye shutter and the left-eye shutter of the liquid crystal shutter (500) when a non-display video image is displayed by the display device (400).

Abstract: An image watching glasses identification device 10 (or 20 or 30) is an image watching glasses identification device 10 (or 20 or 30) for identifying a pair of shutter glasses 400 through which to watch an image displayed on a display device 100, the image watching glasses identification device 10 (or 20 or 30) including: an identification information obtaining section 15 for obtaining an identification information item for identifying the pair of shutter glasses 400 and; a display control section 12 for causing the display device 100 to display an identification result associated with the identification information item obtained by the identification information obtaining section 15. This makes it possible to provide an image watching glasses identification device that is capable of causing, when a viewer watches through the pair of image watching glasses 400 the image displayed on the display device 100, the display device 100 to display the identification result.

Abstract: A heating cooking device 1 includes: a heating unit 5 which heats an object to be heated C; an electromagnetic wave generation unit 15 which radiates electromagnetic waves E having a frequency of 100 GHz to 120 THz towards the object to be heated C for determining a cooking state of the object to be heated C; an electromagnetic wave detection unit 16 which detects the electromagnetic waves E radiated by the electromagnetic wave generation unit 15; and a CPU 13 which determines a cooking state of the object to be heated C based on a signal output by the electromagnetic wave detection unit 16 which detects the electromagnetic waves E. The heating cooking device 1 detects the electromagnetic waves E, an intensity of which is changed by striking the object to be heated C and determine the cooking state of the object to be heated C.

Abstract: An information recording device in accordance with the present invention obtains drive information of a semiconductor laser which is included in a magnetic head by means of a drive information obtaining section and successively records the information in a drive information storing section. A magnetic head control section controls the magnetic head in accordance with a condition of the semiconductor laser on the basis of the drive information thus obtained by the drive information obtaining section.

Abstract: An antireflective structure having a higher antireflective effect compared with those of conventional antireflective structures is produced by a simple process. The antireflective structure (10) includes a plurality of concavities (2a) each having a plurality of convexities (1a) thereon, and a pitch between the plurality of convexities (1a) and a pitch between the plurality of concavities (2a) are smaller than a wavelength of light incident to the antireflective structure (10).

Abstract: View-switching glasses of the present invention are liquid crystal shutter glasses for switching how a viewer views through a left eye and a right eye, including an inclination sensor for detecting an amount of inclination of the liquid crystal shutter glasses when a face of a viewer wearing the liquid crystal shutter glasses is inclined.