Abstract: A predoping method for a negative electrode active material to dope the negative electrode active material with lithium ions. The predoping method for a negative electrode active material includes: a predoping process and a post-doping modification process. In the predoping process, the negative electrode active material is doped with lithium ions, to thereby reduce a potential of the negative electrode active material relative to lithium metal. In the post-doping modification process, after the predoping process, reaction is caused between a reactive compound that is reactive with lithium ions and lithium ions doped into the negative electrode active material, to thereby increase the potential of the negative electrode active material relative to lithium metal. The potential of the negative electrode active material relative to lithium metal is 0.8 V or more at completion of the post-doping modification process.

Abstract: Provided is a doping system in which an active material in a strip-shaped electrode precursor having a layer including an active material is doped with alkali metal. The doping system includes a doping tank, a conveying unit, a counter electrode unit, a connection unit, and a porous insulating member. The doping tank accommodates a solution including alkali metal ions. The conveying unit conveys the electrode precursor along a path passing through the inside of the doping tank. The counter electrode unit is accommodated in the doping tank. The connection unit electrically connects the electrode precursor and the counter electrode unit. The porous insulating member is disposed between the electrode precursor and the counter electrode unit, and is not in contact with the electrode precursor.

Abstract: A predoping method for a negative electrode active material to dope the negative electrode active material with lithium ions using an electrolyte solution that includes lithium ions. The electrolyte solution includes at least one type of additive having a reduction potential higher than a reduction potential of a solvent contained in the electrolyte solution.

Abstract: A predoping method for a negative electrode active material to dope the negative electrode active material with lithium ions. The predoping method for a negative electrode active material includes: a predoping process and a post-doping modification process. In the predoping process, the negative electrode active material is doped with lithium ions, to thereby reduce a potential of the negative electrode active material relative to lithium metal. In the post-doping modification process, after the predoping process, reaction is caused between a reactive compound that is reactive with lithium ions and lithium ions doped into the negative electrode active material, to thereby increase the potential of the negative electrode active material relative to lithium metal. The potential of the negative electrode active material relative to lithium metal is 0.8 V or more at completion of the post-doping modification process.

Abstract: There is provided a means capable of suppressing generation of a lithium dendrite at the time of charging and discharging while sufficiently suppressing an amount of gas generated at the time of initial charging of an electric device. When a lithium ion is doped in advance to a negative electrode active material, which is used in an electric device including a positive electrode and a negative electrode, after performing a pre-doping step of doping the lithium ion to a negative electrode active material to be doped to reduce a potential (vs. Li+/Li) of the negative electrode active material to be doped with respect to a lithium metal, a dedoping step of dedoping the lithium ion from the negative electrode active material doped with the lithium ion in the pre-doping step to increase a potential (vs. Li+/Li) of the negative electrode active material with respect to the lithium metal is performed.

Abstract: Provided is a method for manufacturing an electrode material having a pressing step in which an irregularly shaped aggregate containing at least an active material is statically pressed in the presence of an alkali metal source and a solvent.

Abstract: A manufacturing method for an electrode material, the manufacturing method including, in a presence of an alkali metal supplying source and a solvent, dynamically pressurizing an amorphous aggregate including at least an active material in a dynamic pressurizer, sending out in a sending direction, and continuously discharging the aggregate in the sending direction from the dynamic pressurizer.

Abstract: Provided is a doping system in which an active material in a strip-shaped electrode precursor having a layer including an active material is doped with alkali metal. The doping system includes a doping tank, a conveying unit, a counter electrode unit, a connection unit, and a porous insulating member. The doping tank accommodates a solution including alkali metal ions. The conveying unit conveys the electrode precursor along a path passing through the inside of the doping tank. The counter electrode unit is accommodated in the doping tank. The connection unit electrically connects the electrode precursor and the counter electrode unit. The porous insulating member is disposed between the electrode precursor and the counter electrode unit, and is not in contact with the electrode precursor.

Abstract: Provided is a method for manufacturing an electrode material having a pressing step in which an irregularly shaped aggregate containing at least an active material is statically pressed in the presence of an alkali metal source and a solvent.

Abstract: A method of forming a trench isolation, comprising the steps of: applying a silicone resin composition comprising a silicone resin which is represented by the following rational formula (1) and is solid at 120° C.: (H2SiO)n(HSiO1.5)m(SiO2)k??(1) (wherein n, m and k are each a number, with the proviso that when n+m+k=1, n is 0 to 0.8, m is 0 to 1.0, and k is 0 to 0.2) and an organic solvent to a substrate having trenches in such a manner that the trenches of the substrate are filled with the silicone resin composition so as to form a coating film; and carrying out the step of bringing the coating film into contact with at least one selected from the group consisting of water, an alcohol and hydrogen peroxide and the step of subjecting the coating film to at least one treatment selected from the group consisting of a heat treatment and an optical treatment.

Abstract: Provided is a composition for forming a protective layer which has an excellent acid resistance, an excellent cracking resistance and does not adversely affect semiconductor layers even when acid is used to remove deposits that arise during formation of separation trenches for separating a substrate into device units. Also provided is a method for manufacturing an optical semiconductor device using such a composition. The composition for forming a protective layer includes a siloxane polymer and an organic solvent. The method for manufacturing an optical semiconductor device includes the steps of: forming a protective layer 4 by coating a surface of semiconductor layers 2 and 3 formed on a substrate 1 with a composition for forming a protective layer; forming separation trenches 6 by irradiating the protective layer 4 from above with a laser; and removing deposits that arise during formation of the separation trenches 6.

Abstract: A method of forming an organic silica-based film, including: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment, wherein the composition includes organic silica sol having a carbon content of 11.8 to 16.7 mol %, and an organic solvent, the organic silica sol being a hydrolysis-condensation product produced by hydrolysis and condensation of a silane compound selected from compounds shown by the general formulae (1): R1Si(OR2)3, (2): Si(OR3)4, (3): (R4)2Si(OR5)2, and (4): R6b(R7O)3-bSi—(R10)d—Si(OR8)3-cR9c.

Abstract: A method of forming a trench isolation, comprising the steps of: applying a silicone resin composition comprising a silicone resin which is represented by the following rational formula (1) and is solid at 120° C.: (H2SiO)n(HSiO1.5)m(SiO2)k??(1) (wherein n, m and k are each a number, with the proviso that when n+m+k=1, n is 0 to 0.8, m is 0 to 1.0, and k is 0 to 0.2) and an organic solvent to a substrate having trenches in such a manner that the trenches of the substrate are filled with the silicone resin composition so as to form a coating film; and carrying out the step of bringing the coating film into contact with at least one selected from the group consisting of water, an alcohol and hydrogen peroxide and the step of subjecting the coating film to at least one treatment selected from the group consisting of a heat treatment and an optical treatment.

Abstract: A chemical vapor deposition material includes an organosilane compound shown by the following general formula (1). wherein R1 and R2 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, or a phenyl group, R3 and R4 individually represent an alkyl group having 1 to 4 carbon atoms, an acetyl group, or a phenyl group, m is an integer from 0 to 2, and n is an integer from 1 to 3.

Abstract: An insulating-film-forming composition for a semiconductor device comprising an organic silica sol with a carbon atom content of 11 to 17 atom % and an organic solvent is disclosed. The organic silica sol comprises a hydrolysis-condensation product P1 and a hydrolysis-condensation product P2. The hydrolysis-condensation product P1 is obtained by hydrolyzing and condensing (A) a silane monomer comprising a hydrolyzable group and (B) a polycarbosilane comprising a hydrolyzable group in the presence of (C) a basic catalyst, and the hydrolysis-condensation product P2 is obtained by hydrolyzing and condensing (D) a silane monomer comprising a hydrolyzable group.

Abstract: A method of producing a silicon compound shown by the following general formula (7) includes reacting an organomagnesium compound shown by the following general formula (1) with an organosilane compound shown by the following general formula (2) in a solvent that contains at least one compound selected from a compound shown by the following general formula (3), a compound shown by the following general formula (4), a compound shown by the following general formula (5), and a compound shown by the following general formula (6).

Abstract: A silicon-containing film-forming material includes at least one organosilane compound shown by the following general formula (1). wherein R1 to R6 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, a phenyl group, a halogen atom, a hydroxyl group, an acetoxy group, a phenoxy group, or an alkoxy group, provided that at least one of R1 to R6 represents a halogen atom, a hydroxyl group, an acetoxy group, a phenoxy group, or an alkoxy group, and n represents an integer from 0 to 3.

Abstract: Disclosed is a silicon-containing film-forming material which contains an organosilane compound represented by the following general formula (1). (In the formula, R1-R4 may be the same or different and represent a hydrogen atom, an alkyl group having 1-4 carbon atoms, a vinyl group or a phenyl group; R5 represents an alkyl group having 1-4 carbon atoms, an acetyl group or a phenyl group; n represents an integer of 1-3; and m represents an integer of 1-2.

Abstract: An insulating-film-forming composition for a semiconductor device comprising an organic silica sol with a carbon atom content of 11 to 17 atom % and an organic solvent is disclosed. The organic silica sol comprises a hydrolysis-condensation product P1 and a hydrolysis-condensation product P2. The hydrolysis-condensation product P1 is obtained by hydrolyzing and condensing (A) a silane monomer comprising a hydrolyzable group and (B) a polycarbosilane comprising a hydrolyzable group in the presence of (C) a basic catalyst, and the hydrolysis-condensation product P2 is obtained by hydrolyzing and condensing (D) a silane monomer comprising a hydrolyzable group.

Abstract: A laminate including: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming the laminate includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.