Abstract: A semiconductor device including a nonvolatile memory unit and a variable logic unit mounted on a chip is configured to achieve higher speed operation at a lower voltage. The semiconductor device includes a nonvolatile memory unit comprising a plurality of rewritable nonvolatile memory cells and a variable logic unit whose logical functions are determined, according to logic constitution definition data to be loaded into storage cells thereof. A nonvolatile memory cell essentially has a split gate structure composed of a selecting MOS transistor and a memory MOS transistor and constructed such that the dielectric withstand voltage of the gate of the selecting MOS transistor is lower than that of the memory MOS transistor or the gate insulation layer of the selecting MOS transistor is thinner than that of a high-voltage-tolerant MOS transistor. Because the selecting MOS transistor has a high Gm, a sufficiently great current for reading can be obtained.

Abstract: A semiconductor device including a nonvolatile memory unit and a variable logic unit mounted on a chip is configured to achieve higher speed operation at a lower voltage. The semiconductor device includes a nonvolatile memory unit comprising a plurality of rewritable nonvolatile memory cells and a variable logic unit whose logical functions are determined, according to logic constitution definition data to be loaded into storage cells thereof. A nonvolatile memory cell essentially has a split gate structure composed of a selecting MOS transistor and a memory MOS transistor and constructed such that the dielectric withstand voltage of the gate of the selecting MOS transistor is lower than that of the memory MOS transistor or the gate insulation layer of the selecting MOS transistor is thinner than that of a high-voltage-tolerant MOS transistor. Because the selecting MOS transistor has a high Gm, a sufficiently great current for reading can be obtained.

Abstract: A semiconductor device including a nonvolatile memory unit and a variable logic unit mounted on a chip is configured to achieve higher speed operation at a lower voltage. The semiconductor device includes a nonvolatile memory unit comprising a plurality of rewritable nonvolatile memory cells and a variable logic unit whose logical functions are determined, according to logic constitution definition data to be loaded into storage cells thereof. A nonvolatile memory cell essentially has a split gate structure composed of a selecting MOS transistor and a memory MOS transistor and constructed such that the dielectric withstand voltage of the gate of the selecting MOS transistor is lower than that of the memory MOS transistor or the gate insulation layer of the selecting MOS transistor is thinner than that of a high-voltage-tolerant MOS transistor. Because the selecting MOS transistor has a high Gm, a sufficiently great current for reading can be obtained.

Abstract: A semiconductor device including a nonvolatile memory unit and a variable logic unit mounted on a chip is configured to achieve higher speed operation at a lower voltage. The semiconductor device includes a nonvolatile memory unit comprising a plurality of rewritable nonvolatile memory cells and a variable logic unit whose logical functions are determined, according to logic constitution definition data to be loaded into storage cells thereof. A nonvolatile memory cell essentially has a split gate structure composed of a selecting MOS transistor and a memory MOS transistor and constructed such that the dielectric withstand voltage of the gate of the selecting MOS transistor is lower than that of the memory MOS transistor or the gate insulation layer of the selecting MOS transistor is thinner than that of a high-voltage-tolerant MOS transistor. Because the selecting MOS transistor has a high Gm, a sufficiently great current for reading can be obtained.

Abstract: A semiconductor integrated circuit device formed on a single chip or a microcomputer integrated on a semiconductor chip includes a central processing unit (CPU), an interface circuit (or an input/output port), a bus coupled to the CPU and the interface circuit (or the input/output port) and a variable logic circuit (or a subprocessor). The variable logic circuit (or the subprocessor) includes non-volatile memory elements storing instructions, a control circuit generating control signals in accordance with the stored instructions, and an arithmetic logic unit controlled by the generated control signals. Information can be written into the non-volatile memory elements from outside to construct the variable logic circuit or the subprocessor with any desired logical functions.

Abstract: The present invention discloses an integrated circuit having a data bus, an address bus, a processor and a memory each connected to the data bus and the address bus, a first transmitter for transmitting data inputted to a data terminal to the data bus, a second transmitter for transmitting data on the data bus to the data terminal, a third transmitter for transmitting an address inputted to an address terminal to the address bus, and signal generate means for generating signals to set the respective outputs from the first and third transmitters to the high impedance in response to a memory read request supplied from the processor, for generating signals to set the respective outputs from a data output of memory module to transmit data from the memory to the data bus, the first transmitter, and the third transmitter to the high impedance in response to a memory write request, for generating signals to set the respective outputs from a data output of processor module and an address output of processor module to

Abstract: In developing the function of a data processing system using a semiconductor integrated circuit for data processing, comprising a non-volatile logical function block to which data is written electrically and a logical operation block utilizing the logical function block to execute the logic operation, data corresponding to the required specification and function of the system is written in the logical function block. Thereby, flexibility is obtained for setting and changing the required function to the semiconductor integrated circuit. The semiconductor integrated circuit also has an operation specification written to the logical block by a writing device designed to write to a non-volatile semiconductor storage device thereby improving the convenience of setting the functions required of the semiconductor integrated circuit.

Abstract: A logic circuit built in a single-chip microprocessor is configured of electrically-programmable memory elements, and information is written into the memory elements from outside, whereby the logic circuit having any desired logical functions can be constructed. The writing operation of the memory elements can be executed in a short time, and a user can obtain the single-chip microprocessor having hardware of peculiar prescribed specifications, in a short period.

Abstract: A typical single chip microcomputer disclosed in the present application comprises a control circuit, a processing circuit and a plurality of address register--status register pairs. A logical unit formed within the control circuit comprises an electrically writable non-volatile-semiconductor memory device. Information can be externally written into the non-volatile semiconductor memory included in the logical unit, and the above described plurality of address register--status register pairs can be arbitrarily selected. As a result, logic function of the logical unit can be arbitrarily established in accordance with externally supplied information. Demanded specifications of various users can be satisfied by the logic function thus arbitrarily formed.

Abstract: A single-chip microcomputer includes a microprocessor, a subprocessor for performing peripheral functions, an external port for controlling an input/output operation from/to an external device and a multi-functional logic-in-memory for inputting a plurality of data from at least one of the microprocessor, the subprocessor and the external port and selecting write data from among the plurality of data in accordance with predetermined priorities.

Abstract: The inventive microprocessor includes a first section which runs a microprogram pertinent to a macroinstruction and a second section which runs microprograms that are independent of the macroinstruction, with the first and second sections being operated selectively under time-division control.

Abstract: A semiconductor integrated circuit has a semiconductor output device (3) , a sensor (5) generating an electric signal (7) relevant to heat generation (6) of the output device (3) and a microprocessor unit MPU 2, inside a chip (1). The MPU (2) is constructed of a memory (20) and CPU (22). The electric signal (7) generated from the sensor (5) is processed by the CPU (22) in accordance with a stored program of the memory (20). Accordingly, the drivability of the semiconductor output device (3) can be set in an optimum state corresponding to changes in chip temperature including changes that are only momentary.

Abstract: A logic circuit built in a single-chip microprocessor is configured of electrically-programmable memory elements, and information is written into the memory elements from outside, whereby the logic circuit having any desired logical functions can be constructed. The writing operation of the memory elements can be executed in a short time, and a user can obtain the single-chip microprocessor having hardware of peculiar prescribed specifications, in a short period.

Abstract: A single chip microprocessor 1 includes a CPU 2 and a sub-processor 5 for software implementation of peripheral functions of the microprocessor 1. Sub-processor 5 includes electrically writable internal storage devices microprogram memory unit 13 and sequence control memory unit 62 for storing the software. Peripheral functions are defined and/or modified by writing software into the memory units 13 and 62. Accordingly, the time it takes to define and/or modify the peripheral functions is the time it takes to program the memory units 13 and 62. The sub-processor 5 also includes an execution unit 16 for executing a plurality of tasks and an address control circuit 14 for providing addresses to the microprogram memory unit 13. Additionally, the microprogram memory unit 13 provides microinstructions to the execution unit 16. The sequence control memory unit 62 is part of the address control circuit 14 which also includes a plurality of address registers MAR0 to MAR11.

Abstract: Easy testability and data security of an electrically erasable programmable read only memory (EEPROM) can be accomplished by disposing pads and an input/output (I/O) circuit providing addresses, data and control signals necessary for the EEPROM test on a semiconductor substrate and by disposing a two-level test I/O interception circuit consisting of an EEPROM device on the substrate such that once the testing is completed, unauthorized accessing is prevented from outside the semiconductor substrate as a result of having a built-in data security function. A microcomputer having this capability is provided with a central processing unit (CPU) for processing data, a memory, such as an EEPROM, which is internally communicating through a common bus (which transmits data, address and control signals) with the CPU, other than during a test mode, and first and second inhibition circuits which provide the security.

Abstract: The present invention discloses an integrated circuit having a data bus, an address bus, a processor and a memory each connected to the data bus and the address bus, a first transmitter for transmitting data inputted to a data terminal to the data bus, a second transmitter for transmitting data on the data bus to the data terminal, a third transmitter for transmitting an address inputted to an address terminal to the address bus, and signal generate means for generating signals to set the respective outputs from the first and third transmitters to the high impedance in response to a memory read request supplied from the processor, for generating signals to set the respective outputs from a data output of memory module to transmit data from the memory to the data bus, the first transmitter, and the third transmitter to the high impedance in response to a memory write request, for generating signals to set the respective outputs from a data output of processor module and an address output of processor module to

Abstract: A semiconductor logic device having arrays of logic elements and chains of logic cells alternately arranged in a direction substantially perpendicular to the direction of the chains of logic cells in a surface portion of a semiconductor substrate. Each of the logic element arrays has input and output leads extending from the array in the above-mentioned direction substantially perpendicular to the direction of the chains of logic cells so that each of said logic cell chains is in an electrical connection with two adjacent logic element arrays via the input and output leads.

Abstract: A microcomputer with a non-volatile memory has a plurality of nonvolatile data memory elements arranged in a matrix and a means for reading data from the memory elements in accordance with an address signal which specifies a position in the matrix. A protecting data memory element for storing at least one-bit protection data is disposed in the matrix. Whether a programming (writing), erasing or reading operation with respect to the data memory elements is to be allowed or inhibited is determined in accordance with the contents of the protecting data memory element which are read out in response to the address signal.

Abstract: A semiconductor integrated circuit with a non-volatile memory has a plurality of nonvolatile data memory elements arranged in a matrix and a means for reading data from the memory elements in accordance with an address signal which specifies a position in the matrix. A protecting data memory element for storing at least one-bit protection data is disposed in the matrix. Whether operations such as programming (i.e., writing), erasing or reading with respect to the data memory elements will be allowed or inhibited is determined in accordance with the contents of the protecting data memory element. In other words, data security in an arbitrary area of the matrix can be accomplished based on the content of the protecting data memory element.

Abstract: A semiconductor integrated circuit with a nonvolatile memory has a plurality of nonvolatile data memory elements arranged in a matrix and a means for reading data from the memory elements in accordance with an address signal which specifies a position in the matrix. A protecting data memory element for storing at least one-bit protection data is disposed in the matrix. Whether operations such as a programming (i.e., writing), erasing or reading with respect to the data memory elements will be allowed or inhibited is determined in accordance with the contents of the protecting data memory element. In other words, data security in an arbitrary area of the matrix can be accomplished based on the content of the protecting data memory element.