Abstract: Disclosed is a chemical suitable for use as a volatile precursor for vapor phase depositions of Mo or Cr containing materials, the chemical represented by one of the following formulae: Use of the chemical for vapor phase depositions is demonstrated.

Abstract: Disclosed are chemicals suitable for use as a volatile precursor for vapor phase depositions of Ru containing materials, the chemical represented by the formula (NACD)-Ru-Lx, where x=1-3 and NACD is a non-aromatizable cyclic diene.

Abstract: Disclosed is a chemical suitable for use as a volatile precursor for vapor phase depositions of Mo or Cr containing materials, the chemical represented by one of the following formulae: Use of the chemical for vapor phase depositions is demonstrated.

Abstract: Disclosed is a method for forming a metal-containing film on a substrate comprises the steps of: exposing the substrate to a vapor of a film forming composition that contains a metal-containing precursor; and depositing at least part of the metal-containing precursor onto the substrate to form the metal-containing film on the substrate through a vapor deposition process, wherein the metal-containing precursor is a pure M(alkyl-arene)2, wherein M is Cr, Mo, or W; arene is wherein R1, R2, R3, R4, R5 and R6 each is independently selected from H, C1-C6 alkyl, C1-C6 alkenyl, C1-C6 alkylphenyl, C1-C6 alkenylphenyl, or —SiXR7R8, wherein X is selected from F, Cl, Br, I, and R7, R8 each are selected from H, C1-C6 alkyl, C1-C6 alkenyl.