Abstract: A lithographic method and a lithographic apparatus ar disclosed in which the height of a silicon wafer making up an object of lithography is accurately measured. A lithographic apparatus such as an electron beam apparatus having a height-measuring instrument built therein is effectively used for forming a pattern on the order of submicrons.

Abstract: An electron beam lithography apparatus, comprising an electron beam source for irradiating an electron beam on a specimen surface, a deflectional controller of the electron beam, a focal controller of the electron beam on the specimen surface, a light source which irradiates two monochromatic lights on the surface having wavelengths which are different a half thereof each other, a signal processor for obtaining correction values in a height direction of the beam based on the reflected lights from the surface, and a means for adjusting the focal controller according to the correction values in the height direction. As the wavelengths of the two monochromatic lights on the surface are different in a half wavelength each other, an interference caused by a photo-resist on the specimen is prevented.

Abstract: A shaping aperture used in a charged particle forming system and provided with a slit for shaping the cross section of a charged beam emitted is disclosed in which at least two thin plates each provided with a through-hole for passing the charged particle beam therethrough are piled so as to form a shaping slit of a desired form by the through-holes.