Abstract: An electrophotographic photosensitive member has a selenium type photoconductive layer containing 8000 ppm or less oxygen based on selenium. The member is free from a fatigue due to repeated use.

Abstract: A layer of amorphous silicon containing H, preferably 10-40 atomic %H, is used as a photoconductive layer for electrophotographic photosensitive member.

Abstract: A photoconductive member comprising a support for photoconductive member and an amorphous layer exhibiting photoconductivity comprising an amorphous material containing silicon atoms as a matrix is characterized in that said amorphous layer has a first layer region containing, as constituent atoms, oxygen atoms in a distribution which is nonuniform and continuous in the direction of the layer thickness and a second layer region containing, as constituent atoms, the atoms (A) belonging to group III or group V of the periodic table in a distribution which is continuous in the direction of the layer thickness, said second layer existing internally beneath the surface of said amorphous layer.

Abstract: A photoconductive member comprises a support for photoconductive member and an amorphous layer comprising an amorphous material containing silicon atoms as a matrix and exhibiting photoconductivity, said amorphous layer having a first layer region containing, as constituent atoms, oxygen atoms and a second layer region containing, as constituent atoms, the atoms belonging to the group V of the periodic table in a distribution which is continuous in the direction of the layer thickness and more enriched toward the side of said support.

Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer containing an amorphous material comprising silicon atom as a matrix and having photoconductivity, said amorphous layer comprising a first layer region containing oxygen atom as a constituent atom, the oxygen atom being distributed continuously in the direction of the layer thickness and enriched at the support side, and a second layer region containing an atom of the group III of the periodic table as a constituent atom, said first layer region being internally present at the support side in the amorphous layer, and the layer thickness T.sub.B of said second layer region and a layer thickness T resulted from subtracting T.sub.B from the layer thickness of the amorphous layer satisfying the relation, T.sub.B /T.ltoreq.1.

Abstract: Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.

Abstract: A photoconductive member comprises a support for a photoconductive member, an interface layer comprising an amorphous material containing silicon atoms and nitrogen atoms as constituent atoms, a rectifying layer comprising an amorphous material containing atoms (A) belonging to the group III or the group V of the periodic table as constituent atoms in a matrix of silicon atoms, a first amorphous layer exhibiting photoconductivity and comprising an amorphous material containing at least one member selected from the group consisting of hydrogen atoms and halogen atoms as constituent atoms in a matrix of silicon atoms, and a second amorphous layer containing an amorphous material represented by any of the formulas:Si.sub.a C.sub.1-a (0.4<a<1) . . . (1)(Si.sub.b C.sub.1-b).sub.c H.sub.1-c (0.5<b<1, 0.6 .ltoreq.c<1) . . . (2)(Si.sub.d C.sub.1-d).sub.e X.sub.1-e (0.47<d<1, 0.8.ltoreq.e<1) . . . (3)(Si.sub.f C.sub.1-f).sub.g (H+X).sub.1-g (0.47<f<1, 0.8.ltoreq.g<1) . . .

Abstract: A photoconductive member comprises a support for photoconductive member, an interface layer comprising an amorphous material represented by any of the formulas:Si.sub.a N.sub.1-a (0.57<a<1) (1)(Si.sub.b N.sub.1-b).sub.c H.sub.1-c (0.6<b<1, 0.65.ltoreq.c<1) (2)(Si.sub.d N.sub.1-d).sub.e (X, H).sub.1-e (0.6<d<1, 0.8.ltoreq.e<1) (3)(wherein X represents a halogen atom),a rectifying layer comprising an amorphous material containing atoms (A) belonging to the group III or the group V of the periodic table as constituent atoms in a matrix of silicon atoms, and an amorphous layer exhibiting photoconductivity comprising an amorphous material containing at least one of hydrogen atoms and halogen atoms as constituent atoms in a matrix of silicon atoms.

Abstract: A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.

Abstract: An electrophotographic photosensitive member comprising an electric charge injection layer, an amorphous photoconductive layer on said charge injection layer, and an insulating layer on said amorphous photoconductive layer, said charge injection layer containing halogen as an impurity.

Abstract: The invention concerns a screen photosensitive member, and an electrophotographic method using such screen photosensitive member, and relates to improvement in the screen constructed with an electrically conductive member, a photoconductive layer provided on the electrically conductive member, and a surface insulative layer constituting the screen surface at the side opposite to at least a modulating corona source. More particularly, the screen according to the present invention is further provided, at the side of the modulating corona source, with a potential holding layer which holds thereon corona ions applied to it and maintains the surface of the screen at the side of the modulating corona source at a predetermined potential.

Abstract: A layer of amorphous silicon containing H, preferably 10-40 atomic %H, is used as a photoconductive layer for electrophotographic photosensitive member.

Abstract: An electrophotographic photosensitive member having an amorphous deposition layer as a photoconductive layer, in which the amorphous deposition layer is formed by gradual increase in a substrate temperature during deposition of the photoconductive material.

Abstract: An electrophotographic photosensitive member having an insulating layer overlaid on the one side of an amorphous photoconductive layer is characterized in that said photosensitive member further comprises two layers: a charge injection layer and a subsidiary charge injection layer overlaid on the other side of the photoconductive layer with the subsidiary charge injection layer being interposed between the photoconductive layer and the charge injection layer, said subsidiary charge injection layer having a lower free charge density than that in the photoconductive layer and being able to make it easy to inject an amount of electric charge from the charge injection layer into the photoconductive layer whereas said charge injection layer has a higher free charge density than that in the photoconductive layer and serves as a main supply source of the electric charge to be injected into the photoconductive layer.