Abstract: An object of the present invention is to realize an optical gate switch of a monolithic integration type which can avoid problems of losses caused by light coupling of a phase modulation unit to a interferometer optical circuit unit, and can be minimized by integration. The optical gate switch according to the present invention includes an optical waveguide wafer in which a quantum well having a phase modulation effect which is generated by an intersubband transition is set as a core layer; a Michelson interferometer formed on the optical waveguide wafer; and a variable light intensity attenuation unit adjusting a light balance of an interferometer in one of reflection side arms of the Michelson interferometer reflection.

Abstract: An object of the present invention is to realize an optical gate switch of a monolithic integration type which can avoid problems of losses caused by light coupling of a phase modulation unit to a interferometer optical circuit unit, and can be minimized by integration. The optical gate switch according to the present invention includes an optical waveguide wafer in which a quantum well having a phase modulation effect which is generated by an intersubband transition is set as a core layer; a Michelson interferometer formed on the optical waveguide wafer; and a variable light intensity attenuation unit adjusting a light balance of an interferometer in one of reflection side arms of the Michelson interferometer reflection.

Abstract: An optical head using a refractive index distribution changeable lens by which light focused on a recording surface of an optical disc is precisely and positionally controlled. The refractive index distribution of this refractive index distribution changeable lens is changed by changing an electric field applied thereto so as to precisely displace the position of the focus point of the emitted light on the recording surface of the optical disc.

Abstract: A thick film thermistor composition is prepared by mixing metal oxide powders of at least two of Mn, Co and Ni, and oxide powder of Ru as a noble metal, firing the resulting mixture, thereby obtaining a compound oxide thermistor of spinel structure, pulverizing the resulting compound oxide thermistor, and mixing and kneading the resulting thermistor powder with glass powder and oxide powder of Ru for adjusting a resistance.

Abstract: A thermistor composition comprises oxide powder of at least two of Mn, Co, and Ni, and an oxide powder of Ru as a noble metal.

Abstract: This specification discloses a thermistor composition comprising a thermistor characteristic powder, a bismuth containing borosilicate glass frit and an electrically conductive powder comprising a mixture of a noble metal powder and ruthenium oxide powder which is selected from RuO.sub.2 + Ag and RuO.sub.2 + Au wherein the mixing ratio of the metal oxide thermistor characteristic powder, the glass and the electrically conductive powder is in the area of the quadrilateral ABCD in the triangular diagram of the accompanying FIG.