Patents by Inventor Teruo Tamama

Teruo Tamama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4460417
    Abstract: An insulating film is prepared by oxidizing an amorphous silicon layer containing boron or boron and germanium. The amorphous silicon layer is partially oxidized inwardly from the surface of the amorphous silicon layer to form the insulating film, while the unoxidized portion of the amorphous silicon layer is used as a conductive layer. The amorphous silicon layer may contain boron or boron and an element of Group IV, for example germanium. The insulating film is utilized to fabricate a bipolar transistor.
    Type: Grant
    Filed: October 22, 1982
    Date of Patent: July 17, 1984
    Assignee: Nippon Telegraph & Telephone Public Corporation
    Inventors: Katsumi Murase, Teruo Tamama, Yoshihito Amemiya, Yoshihiko Mizushima