Patents by Inventor Terushige Hino

Terushige Hino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing displays and apparatus for manufacturing displays
    Patent number: 7527658
    Abstract: A method of manufacturing displays, includes at least forming a metal pattern on a surface of an insulating substrate, forming an insulating film on the metal pattern, forming a pattern of a photosensitive resin on the insulating film, and forming a contact hole in the insulating film with the film of a photosensitive resin used as a mask. The forming a contact hole is a dry etching method in which an electric field is generated between a pair of opposed electrodes after an insulating substrate has been mounted on one electrode that includes aluminum in at least a surface thereof. The dry etching method includes forming a contact hole in the insulating film with an outer circumferential portion, which surrounds a region on which the insulating substrate is mounted, of the one electrode covered with an insulating material.
    Type: Grant
    Filed: July 13, 2005
    Date of Patent: May 5, 2009
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Terushige Hino, Kazuaki Tanoue, Eiji Shibata, Takuji Oda
  • Method of manufacturing displays and apparatus for manufacturing displays
    Publication number: 20060014395
    Abstract: A method of manufacturing displays, includes at least forming a metal pattern on a surface of an insulating substrate, forming an insulating film on the metal pattern, forming a pattern of a photosensitive resin on the insulating film, and forming a contact hole in the insulating film with the film of a photosensitive resin used as a mask. The forming a contact hole is a dry etching method in which an electric field is generated between a pair of opposed electrodes after an insulating substrate has been mounted on one electrode that includes aluminum in at least a surface thereof. The dry etching method includes forming a contact hole in the insulating film with an outer circumferential portion, which surrounds a region on which the insulating substrate is mounted, of the one electrode covered with an insulating material.
    Type: Application
    Filed: July 13, 2005
    Publication date: January 19, 2006
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Terushige Hino, Kazuaki Tanoue, Eiji Shibata, Takuji Oda