Abstract: A method for evaluating atomic vacancies in a silicon wafer surface layer includes: element formation in which a pair of comb-shaped electrodes are formed on the same surface of a silicon sample over piezoelectric thin films; detection during which the sample is cooled and an ultrasonic pulse generated from one electrode while an external magnetic field is applied, the ultrasonic pulse being propagated through the sample surface and received by the other electrode, and a phase difference being detected between the ultrasonic pulse generated by the one electrode and the ultrasonic pulse received by the other electrode; and evaluation during which the sample surface elastic constant is determined on the basis of the phase difference, and the atomic vacancies in the sample surface are evaluated on the basis of changes in the elastic constant according to temperature or changes in the elastic constant according to the magnetic field intensity.

Abstract: A quantitative evaluation method, a method for manufacturing a silicon wafer, and a silicon wafer manufactured by the method, enabling more efficient evaluation of the concentration of atomic vacancies existing in a silicon wafer. The quantitative evaluation method includes steps of: oscillating, in a state in which an external magnetic field is applied to a silicon wafer (26) while keeping the silicon wafer (26) at a constant temperature, an ultrasonic wave pulse and receiving a measurement wave pulse obtained after the ultrasonic wave pulse is propagated through the silicon wafer (26) for detecting a phase difference between the ultrasonic wave pulse and the measurement wave pulse; and calculating an elastic constant from the phase difference. The external magnetic field is changed to calculate the elastic constant corresponding to a change in the external magnetic field for evaluating a concentration of atomic vacancies in the silicon wafer (26).

Abstract: A quantitative evaluation device and method of an atomic vacancy, which are capable of efficiently and quantitatively evaluating an atomic vacancy existing in a silicon wafer. A quantitative evaluation device 1 is equipped with a detector 5 including an ultrasonic generator 27 and an ultrasonic receiver 28, a silicon sample 6 formed with the ultrasonic generator 27 and the ultrasonic receiver 28 on a silicon wafer 26 comprising perfect crystal silicon, a magnetic force generator 4 for applying an external magnetic field to the silicon sample 6, and a cooler 3 capable of cooling and controlling the silicon sample 6 to a range of temperatures lower than or equal to 50K.

Abstract: A quantitative evaluation method, a method for manufacturing a silicon wafer, and a silicon wafer manufactured by the method, enabling more efficient evaluation of the concentration of atomic vacancies existing in a silicon wafer. The quantitative evaluation method includes steps of: oscillating, in a state in which an external magnetic field is applied to a silicon wafer (26) while keeping the silicon wafer (26) at a constant temperature, an ultrasonic wave pulse and receiving a measurement wave pulse obtained after the ultrasonic wave pulse is propagated through the silicon wafer (26) for detecting a phase difference between the ultrasonic wave pulse and the measurement wave pulse; and calculating an elastic constant from the phase difference. The external magnetic field is changed to calculate the elastic constant corresponding to a change in the external magnetic field for evaluating a concentration of atomic vacancies in the silicon wafer (26).

Abstract: There is provided a quantitative evaluation device or the like of atomic vacancy existing in a silicon wafer in which the atomic vacancy concentration in the silicon wafer can be quantitatively evaluated by forming a rationalized thin-film transducer on a surface of a silicon sample without conducting an acceleration treatment for enhancing the concentration.

Abstract: A quantitative evaluation device and method of an atomic vacancy, which are capable of efficiently and quantitatively evaluating an atomic vacancy existing in a silicon wafer. A quantitative evaluation device 1 is equipped with a detector 5 including an ultrasonic generator 27 and an ultrasonic receiver 28, a silicon sample 6 formed with the ultrasonic generator 27 and the ultrasonic receiver 28 on a silicon wafer 26 comprising perfect crystal silicon, a magnetic force generator 4 for applying an external magnetic field to the silicon sample 6, and a cooler 3 capable of cooling and controlling the silicon sample 6 to a range of temperatures lower than or equal to 50K.

Abstract: A Si single crystal having no defect region is stably grown by clearly detecting a type of a defect region or a defect free region of Si single crystal grown at a certain pulling rate profile and feeding back the data to the subsequent pulling. In the production of Si single crystal ingot by a CZ method, a concentration distribution of atomic vacancy in a cross-section of a precedent grown Si single crystal is detected by the direct observation method of atomic vacancy and then fed back to the subsequent pulling treatment to adjust a pulling rate profile of the subsequent pulling.

Abstract: There is provided a quantitative evaluation device or the like of atomic vacancy existing in a silicon wafer in which the atomic vacancy concentration in the silicon wafer can be quantitatively evaluated by forming a rationalized thin-film transducer on a surface of a silicon sample without conducting an acceleration treatment for enhancing the concentration.