Abstract: Provided is a sample observation apparatus including: a microscope that irradiates a sample with a probe, detects a signal from the sample, and outputs a detection signal; and a system that generates an image based on the detection signal received from the microscope. The system receives designation executed by a user for one or more trained models in a model database storing data of a plurality of trained models for estimating a high-quality image based on a low-quality image. The system generates and displays a current low-quality observation image based on the detection signal, and estimates and displays a high-quality image based on the current low-quality observation image according to each of the one or more trained models.

Abstract: Provided is a technique capable of removing a damaged layer of a sample piece generated through an FIB fabrication sufficiently but at the minimum. A charged particle beam device includes a first element ion beam optical system unit (110) which performs a first FIB fabrication to form a sample piece from a sample, a second element ion beam optical system unit (120) which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece, and a first element detector (140) which detects an first element existing in the damaged layer. A termination of the second FIB fabrication is determined if an amount of the first element existing in the damaged layer becomes smaller than a predefined threshold value.

Abstract: Provided is a charged particle beam device with high sensitivity, capable of detecting charged particles emitted from a sample at high resolution. An absorption current detector arranged to contact with the sample makes an absorption current generated in the sample by an irradiated charged particle beam flow through the detector, thereby to detect the current. The charged particle beam scans the sample and the charged particle beam device acquires an absorption current image. In case the absorption current detector is arranged separated from the sample, the absorption current detector detects the incident charged particle beam as a signal current dependent on an angle ? formed in a direction from the irradiation position on the sample toward the absorption current detector relative to at least one of the normal line direction of the front surface of the sample and the incident direction of the charged particle beam.

Abstract: Provided is a charged particle beam device with high sensitivity, capable of detecting charged particles emitted from a sample at high resolution. An absorption current detector arranged to contact with the sample makes an absorption current generated in the sample by an irradiated charged particle beam flow through the detector, thereby to detect the current. The charged particle beam scans the sample and the charged particle beam device acquires an absorption current image. In case the absorption current detector is arranged separated from the sample, the absorption current detector detects the incident charged particle beam as a signal current dependent on an angle ? formed in a direction from the irradiation position on the sample toward the absorption current detector relative to at least one of the normal line direction of the front surface of the sample and the incident direction of the charged particle beam.

Abstract: Provided is a technique to perform FIB milling, in spite of its sample dependency, effectively into a desired shape without influences of individual differences among operators. A charged particle beam device includes an ion beam optical system device configured to irradiate a sample with an ion beam generated at an ion source; a controller thereof; an element detector configured to detect elements constituting the sample; a controller thereof; and a central processor configured to automatically set conditions for the sample based on the element specified by the element detector.

Abstract: A charged particle beam apparatus of the present invention comprises a transmission electron detector (113; 206) having a detection portion divided into multiple regions (201 to 205; 301 to 305), wherein a film thickness of a sample is calculated by detecting a transmission electron beam (112) generated from the sample when the sample is irradiated with an electron beam (109), as a signal of each of the regions in accordance with scattering angles of the transmission electron beam, and thereafter calculating the intensities of the individual signals. According to the above, there is provided a charged particle beam apparatus capable of performing accurate film thickness monitoring while suppressing an error due to an external condition and also capable of processing a thin film sample into a sample having an accurate film thickness, which makes it possible to improve the accuracy in structure observations, element analyses and the like.

Abstract: Provided is a technique to perform FIB milling, in spite of its sample dependency, effectively into a desired shape without influences of individual differences among operators. A charged particle beam device includes an ion beam optical system device configured to irradiate a sample with an ion beam generated at an ion source; a controller thereof; an element detector configured to detect elements constituting the sample; a controller thereof; and a central processor configured to automatically set conditions for the sample based on the element specified by the element detector.

Abstract: A precision of removal of a damaged layer of a sample created by machining with an FIB machining device depends on a skill of an operator. During removal machining of the damaged layer generated by an ion beam, transmitted electrons which are generated by irradiating an electron beam formed in an electron beam optics system onto a sample are detected by a two-dimensional detector, and a moment for finishing the removal machining of the damaged layer is determined based on the amount of blur of a diffraction pattern acquired with the two-dimensional detector.

Abstract: Provided is a technique capable of removing a damaged layer of a sample piece generated through an FIB fabrication sufficiently but at the minimum. A charged particle beam device includes a first element ion beam optical system unit (110) which performs a first FIB fabrication to form a sample piece from a sample, a second element ion beam optical system unit (120) which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece, and a first element detector (140) which detects an first element existing in the damaged layer. A termination of the second FIB fabrication is determined if an amount of the first element existing in the damaged layer becomes smaller than a predefined threshold value.

Abstract: A charged particle beam apparatus of the present invention comprises a transmission electron detector (113; 206) having a detection portion divided into multiple regions (201 to 205; 301 to 305), wherein a film thickness of a sample is calculated by detecting a transmission electron beam (112) generated from the sample when the sample is irradiated with an electron beam (109), as a signal of each of the regions in accordance with scattering angles of the transmission electron beam, and thereafter calculating the intensities of the individual signals. According to the above, there is provided a charged particle beam apparatus capable of performing accurate film thickness monitoring while suppressing an error due to an external condition and also capable of processing a thin film sample into a sample having an accurate film thickness, which makes it possible to improve the accuracy in structure observations, element analyses and the like.