Patents by Inventor Teruyo Nagai

Teruyo Nagai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate
    Patent number: 6495894
    Abstract: A buffer layer with a composition of AlaGabIncN (a+b+c=1, a, b, c≧0) and a multilayered thin films with a composition of AlxGayInzN (x+y+z=1, x, y, z≧0) are formed in turn on a substrate. The Al component of the Al component-minimum portion of the buffer layer is set to be larger than that of at least the thickest layer of the multilayered thin films. The Al component of the buffer layer is decreased continuously or stepwise from the side of the substrate to the side of the multilayered thin films therein.
    Type: Grant
    Filed: May 14, 2001
    Date of Patent: December 17, 2002
    Assignee: NGK Insulators, Ltd.
    Inventors: Tomohiko Shibata, Keiichiro Asai, Teruyo Nagai, Mitsuhiro Tanaka
  • Method for manufacturing an A1xGayInzN film using a metal film for heat radiation
    Patent number: 6492191
    Abstract: A semiconductor device has a substrate body, an AlxGayInzN (x+y+z=1; x,y,z≧0) film epitaxially grown directly on the substrate body or epitaxially grown via a buffer layer on the substrate body, and a metal film provided on the lower surface of the substrate body. During manufacture of the semiconductor device, the substrate body is heated uniformly and efficiently by thermal radiation of a heater.
    Type: Grant
    Filed: March 20, 2001
    Date of Patent: December 10, 2002
    Assignee: NGK Insulators, Ltd.
    Inventors: Tomohiko Shibata, Keiichiro Asai, Teruyo Nagai, Mitsuhiro Tanaka
  • Semiconductor device, a method for manufacturing a semiconductor device and an epitaxial growth substrate for a semiconductor device
    Publication number: 20020028343
    Abstract: A semiconductor device has a substrate body, an AlxGayInzN (x+y+z=1,x,y,z≧0) film epitaxially grown direct on the substrate body or epitaxially grown via a buffer layer on the substrate body, and a metal film provided on the rear surface of the substrate body. In the case of the manufacturing the semiconductor device, the substrate body is heated, by a heater, uniformly and efficiently through the thermal radiation of the heater.
    Type: Application
    Filed: March 20, 2001
    Publication date: March 7, 2002
    Applicant: NGK Insulators, Ltd.
    Inventors: Tomohiko Shibata, Keiichiro Asai, Teruyo Nagai, Mitsuhiro Tanaka
  • Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate
    Publication number: 20020020850
    Abstract: A buffer layer with a composition of AlaGabIncN (a+b+c=1, a, b, c≧0) and a multilayered thin films with a composition of AlxGayInzN (x+y+z=1, x, y, z≧0) are formed in turn on a substrate. The Al component of the Al component-minimum portion of the buffer layer is set to be larger than that of at least the thickest layer of the multilayered thin films. The Al component of the buffer layer is decreased continuously or stepwise from the side of the substrate to the side of the multilayered thin films therein.
    Type: Application
    Filed: May 14, 2001
    Publication date: February 21, 2002
    Applicant: NGK Insulators, Ltd.
    Inventors: Tomohiko Shibata, Keiichiro Asai, Teruyo Nagai, Mitsuhiro Tanaka