Abstract: Provided is a method that allows for firm joining of power module components even if a joining area is large. The method includes: forming an oxygen ion conductor layer on a surface of one of a first member to be joined containing metal and a second member to be joined containing ceramic; arranging the first member to be joined and the second member to be joined so that they are in contact with each other via the oxygen ion conductor layer; connecting the first member to be joined to one of a positive electrode side and a negative electrode side of a voltage application device and the second member to be joined to the other; and applying a voltage between the first member to be joined and the second member to be joined to join the first member to be joined and the second member to be joined together.

Abstract: A motor is stably driven under an extremely low temperature. A control unit controls an inverter to extract a pulse-like direct current from a battery, in case where a temperature Temp of the battery is below a predetermined value TH at which a power that can drive a motor is continuously extractable, by cyclically repeating an on-period to extract the direct current that can drive the motor from the battery and an off-period in which, after the on-period, the power is not extracted from the battery until the direct current that can drive the motor becomes extractable from the battery again. The inverter converts, to a phase current, the direct current extracted from the battery in the on-period.

Abstract: A method allows for firm joining of power module components even if a joining area is large. The method includes: forming an oxygen ion conductor layer on a surface of one of a first member to be joined containing metal and a second member to be joined containing ceramic and a metal plating layer on a surface of the other; arranging them so that they are in contact with each other; connecting one of the first member to be joined and the second member to be joined on which the metal plating layer is provided to the negative electrode side of the voltage application device and the other to the positive electrode side; and applying a voltage between the first member to be joined and the second member to be joined to join them together.

Abstract: A state estimation unit estimates an OCV upon charging a battery. Pulse charging units applies a charging pulse voltage to the battery when the OCV is larger than a first predetermined value. The state estimation unit estimates the OCV by sequentially calculating a coefficient of a transmission function based on an equivalent circuit model of the battery each time the pulse charging units apply the charging pulse voltage. The pulse charging units compare the OCV to a second predetermined value that is larger than the first predetermined value. The pulse charging units determine to apply the next pulse voltage in the pulse charging units when the estimated OCV is smaller than the second predetermined value, and determine to end charging the battery when the OCV is larger than the second predetermined value.

Abstract: A method for bonding a solid electrolyte layer and electrodes used a fuel cell includes: laminating the solid electrolyte layer and the electrodes so that the electrodes sandwich the solid electrolyte layer therebetween; applying a first voltage of a first polarity between the electrodes sandwiching the solid electrolyte layer; and applying a second voltage of a second polarity that is the reverse of the first polarity between the electrodes sandwiching the solid electrolyte layer.

Abstract: An energy management system comprises a battery, a heat storage unit, a cold storage unit and a control device. The control device distributes electric power (electric energy) inputted into the energy management system 1 among the battery, the heat storage unit and the cold storage unit by referring to a charging state (SOC and SOP) of the battery, a heat storage state to the heat storage unit and a cold storage state to the cold storage unit. The inputted electric energy is converted into chemical energy to be stored in the battery, and on the other hand, is converted into thermal energy to be stored in the heat storage unit and the cold storage unit.

Abstract: A bonding method in which more variety of materials can be bonded than a conventional anodic bonding method includes: a disposing step of disposing an oxygen ion conductor and a bonded material to be bonded to the oxygen ion conductor such that they are brought in contact with each other; a connecting step of connecting the oxygen ion conductor to a negative side of a voltage application device and connecting the bonded material to a positive side of the voltage application device; and a voltage applying step of applying a voltage between the oxygen ion conductor and the bonded material so as to bond the oxygen ion conductor and the bonded material, wherein abutting surfaces of the oxygen ion conductor and the bonded material are processed such that they are in close contact with each other.

Abstract: A bonding method is capable of firmly bonding a greater variety of materials using an electrochemical reaction. The bonding method includes a placement step of placing an oxygen ion conductor and a conductive member that includes an oxide layer on a surface thereof in contact with each other via the oxide layer, a connection step of connecting the oxygen ion conductor to the positive electrode side of a voltage application device and connecting the conductive member to the negative electrode side of the voltage application device, and a voltage application step of applying voltage between the oxygen ion conductor and the conductive member to bond the oxygen ion conductor and the conductive member.

Abstract: A motor is stably driven under an extremely low temperature. A control unit controls an inverter to extract a pulse-like direct current from a battery, in case where a temperature Temp of the battery is below a predetermined value TH at which a power that can drive a motor is continuously extractable, by cyclically repeating an on-period to extract the direct current that can drive the motor from the battery and an off-period in which, after the on-period, the power is not extracted from the battery until the direct current that can drive the motor becomes extractable from the battery again. The inverter converts, to a phase current, the direct current extracted from the battery in the on-period.

Abstract: A method for bonding a solid electrolyte layer and electrodes used a fuel cell includes: laminating the solid electrolyte layer and the electrodes so that the electrodes sandwich the solid electrolyte layer therebetween; applying a first voltage of a first polarity between the electrodes sandwiching the solid electrolyte layer; and applying a second voltage of a second polarity that is the reverse of the first polarity between the electrodes sandwiching the solid electrolyte layer.

Abstract: The disclosure relates to a photoconductive ignition system including a photoconductor configured to contact an oxidant-fuel gas mixture, and a light source providing irradiating light to a surface of the photoconductor. The photoconductor absorbs at least some of the light from the light source, which causes a variation in electrical potential at the surface of the photoconductor, thereby igniting the oxidant-fuel gas mixture. The disclosure further relates to a method of activating an oxidant-fuel gas mixture by exposing a photoconductor surface to the gas mixture and irradiating the surface with a light source emitting light at a wavelength corresponding to an energy level greater than a band gap energy level of the photoconductor, thereby activating the gas mixture in a combustion reaction.

Abstract: The present invention-provides a tunnel-injection device which encompasses, a reception layer made of a first semiconductor, a barrier-forming layer made of a second semiconductor having a bandgap-narrower than the first semiconductor, being in metallurgical contact with the reception layer, a gate insulating film disposed on the barrier-forming layer. The gate electrode controls the width of the barrier generated at the heterojunction interface between the reception layer and the barrier-forming layer so as to change the tunneling probability of carriers through the barrier. The device further encompasses a carrier receiving region being contact with the reception layer and a carrier-supplying region being contact with the barrier-forming layer.

Abstract: A high reverse voltage diode includes a hetero junction made up from a silicon carbide base layer, which constitutes a first semiconductor base layer, and a polycrystalline silicon layer, which constitutes a second semiconductor layer, and whose band gap is different from that of the silicon carbide base layer. A low concentration N type polycrystalline silicon layer is deposited on a first main surface side of the silicon carbide base layer, and a metal electrode is formed on a second main surface side of the silicon carbide base layer which is opposite to the first main surface side thereof.

Abstract: The present invention-provides a tunnel-injection device which encompasses, a reception layer made of a first semiconductor, a barrier-forming layer made of a second semiconductor having a bandgap-narrower than the first semiconductor, being in metallurgical contact with the reception layer, a gate insulating film disposed on the barrier-forming layer. The gate electrode controls the width of the barrier generated at the heterojunction interface between the reception layer and the barrier-forming layer so as to change the tunneling probability of carriers through the barrier. The device further encompasses a carrier receiving region being contact with the reception layer and a carrier-supplying region being contact with the barrier-forming layer.

Abstract: A high reverse voltage diode includes a hetero junction made up from a silicon carbide base layer, which constitutes a first semiconductor base layer, and a polycrystalline silicon layer, which constitutes a second semiconductor layer, and whose band gap is different from that of the silicon carbide base layer. A low concentration N type polycrystalline silicon layer is deposited on a first main surface side of the silicon carbide base layer, and a metal electrode is formed on a second main surface side of the silicon carbide base layer which is opposite to the first main surface side thereof.

Abstract: A semiconductor structure having a plurality of drivers in and on the same semiconductor substrate is arranged to increase the density of integrated components and reduce the on resistance. The semiconductor structure employs a double layer interconnection structure having source and drain electrodes at two different levels, and an insulated gate electrode in a groove formed the semiconductor substrate. Each drain lead region having a low resistivity material extends from the upper surface of the substrate to a low resistivity buried layer. Each drain opening is surrounded by a source zone formed with a series of source holes or a long and narrow source slot, and this basic pattern is regularly repeated in a plane.

Abstract: A semiconductor device having a surge input detecting circuit is provided with the driving circuit for, for example, reversible motor. To prevent MOS power transistors constituting the power driving circuit from their destructive breakdowns (failures), when the surge input detecting circuit block detects the surge voltage input through the driving circuit which exceeds a predetermined voltage, namely, a maximum rated power supply voltage of the power driving circuit, the surge input detecting circuit outputs the signal to turn the MOS power transistors in off-states. These circuit elements are integrally mounted on a semiconductor chip. The surge input detecting circuit block detects such a surge input through a power supply terminal in terms of either of its voltage, its current, or the temperature rise in the semiconductor chip. The breakdown voltage per power transistor can be half the maximum rated power supply voltage.

Abstract: A lateral double-diffused MOSFET has a semiconductor substrate, a drain region formed on the substrate, a gate insulation film formed on the drain region, a gate electrode formed on the gate insulation film, source and drain openings formed through the gate electrode, a first conductive region formed under the drain region, a source electrode formed on the source openings, a drain electrode formed on the drain openings, and second conductive regions for connecting the drain electrode to the first conductive region. The source and drain openings are cyclically arranged so that at least two rows of source openings are arranged between adjacent drain openings, to reduce the ON resistance of the MOSFET.

Abstract: In a radar target position detecting apparatus, beams (, for example, light beams) irradiated from a transmitter(, for example, LED) have a predetermined divergence angle, a plurality of light (beam) receiving elements such as photodiode arrays each having a different receiving angle (directivity) are arranged in an array form, and a direction of a reflected wave (beam) is identified according to a position of the arrayed beam (wave) receiving elements in the array at which the reflected wave (beam) is captured.

Abstract: A method of manufacturing semiconductor devices by forming a U-shaped insulated gate on a substrate, etching the substrate to expose a sidewall of the U-shaped insulated gate, covering the exposed part with a masking material, forming the sidewall of the masking material only adjoining to the exposed U-shaped insulated gate, etching the substrate vertically to form a groove, forming a semiconductor region on the groove and burying a metal into the groove.