Patents by Inventor Teruyuki Furuta

Teruyuki Furuta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Surface-emission laser diode operable in the wavelength band of 1.1-1.7 micrometers and optical telecommunication system using such a laser diode
    Patent number: 7590159
    Abstract: A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 ?m or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.
    Type: Grant
    Filed: June 7, 2007
    Date of Patent: September 15, 2009
    Assignee: Ricoh Company, Ltd.
    Inventors: Naoto Jikutani, Shunichi Sato, Takashi Takahashi, Akihiro Itoh, Takuro Sekiya, Akira Sakurai, Masayoshi Katoh, Teruyuki Furuta, Kazuya Miyagaki, Ken Kanai, Atsuyuki Watada, Koei Suzuki, Satoru Sugawara, Shinji Satoh, Shuuichi Hikichi
  • SURFACE-EMISSION LASER DIODE OPERABLE IN THE WAVELENGTH BAND OF 1.1-1.7 MICROMETERS AND OPTICAL TELECOMMUNICATION SYSTEM USING SUCH A LASER DIODE
    Publication number: 20080043796
    Abstract: A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 ?m or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.
    Type: Application
    Filed: June 7, 2007
    Publication date: February 21, 2008
    Inventors: Naoto JIKUTANI, Shunichi Sato, Takashi Takahashi, Akihiro Itoh, Takuro Sekiya, Akira Sakurai, Masayoshi Katoh, Teruyuki Furuta, Kazuya Miyagaki, Ken Kanai, Atsuyuki Watada, Koei Suzuki, Satoru Sugawara, Shinji Satoh, Shuuichi Hikichi
  • Surface-emission laser diode operable in the wavelength band of 1.1-1.7mum and optical telecommunication system using such a laser diode
    Patent number: 7245647
    Abstract: A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 ?m or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5–50 nm.
    Type: Grant
    Filed: October 31, 2003
    Date of Patent: July 17, 2007
    Assignee: Ricoh Company, Ltd.
    Inventors: Naoto Jikutani, Shunichi Sato, Takashi Takahashi, Akihiro Itoh, Takuro Sekiya, Akira Sakurai, Masayoshi Katoh, Teruyuki Furuta, Kazuya Miyagaki, Ken Kanai, Atsuyuki Watada, Koei Suzuki, Satoru Sugawara, Shinji Satoh, Shuuichi Hikichi
  • Surface-emission laser diode operable in the wavelength band of 1.1-1.7 um and optical telecommunication system using such a laser diode
    Publication number: 20060093010
    Abstract: A surface-emission laser diode includes a distributed Bragg reflector tuned to a wavelength of 1.
    Type: Application
    Filed: September 8, 2005
    Publication date: May 4, 2006
    Inventors: Takuro Sekiya, Akira Sakurai, Masayoshi Katoh, Teruyuki Furuta, Kazuya Miyagaki, Ken Kanai, Atsuyuki Watada, Shunichi Sato, Koei Suzuki, Satoru Sugawara, Shinji Satoh, Shuuichi Hikichi, Naoto Jikutani, Takashi Takahashi, Akihiro Itoh
  • Surface-emission laser diode operable in the wavelength band of 1.1-7?m and optical telecommunication system using such a laser diode
    Patent number: 6975663
    Abstract: A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 ?m or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.
    Type: Grant
    Filed: February 26, 2002
    Date of Patent: December 13, 2005
    Assignee: Ricoh Company, Ltd.
    Inventors: Takuro Sekiya, Akira Sakurai, Masayoshi Katoh, Teruyuki Furuta, Kazuya Miyagaki, Ken Kanai, Atsuyuki Watada, Shunichi Sato, Koei Suzuki, Satoru Sugawara, Shinji Satoh, Shuuichi Hikichi, Naoto Jikutani, Takashi Takahashi, Akihiro Itoh
  • Surface-emission laser diode operable in the wavelength band of 1.1-7mum and optical telecommunication system using such a laser diode
    Publication number: 20030053501
    Abstract: A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 &mgr;m or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.
    Type: Application
    Filed: February 26, 2002
    Publication date: March 20, 2003
    Inventors: Takuro Sekiya, Akira Sukurai, Masayoshi Katoh, Teruyuki Furuta, Kazuya Miyagaki, Ken Kanai, Atsuyuki Watada, Shunichi Sato, Koei Suzuki, Satoru Sugawara, Shinji Satoh, Shuuichi Hikichi, Naoto Jikutani, Takashi Takahashi, Akihiro Itoh