Abstract: An active matrix substrate includes a plurality of thin film transistors including an oxide semiconductor layer, an interlayer insulating layer, a plurality of pixel electrodes arranged above the interlayer insulating layer, a common electrode arranged between the pixel electrode and the interlayer insulating layer and also configured to function as a touch sensor electrode, a first dielectric layer arranged between the interlayer insulating layer and the common electrode, a second dielectric layer arranged between the common electrode and the pixel electrode, a plurality of touch wiring lines arranged between the interlayer insulating layer and the common electrode and formed of a third conductive film, and a plurality of pixel contact portions, in which each of the plurality of pixel contact portions includes a drain electrode of the thin film transistor, a connection electrode formed of the third conductive film and electrically connected to the drain electrode in a lower opening formed in the interlayer i

Abstract: A vector that includes a nucleic acid sequence encoding protelomerase, a pair of nucleic acid sequences recognized by the protelomerase, and a nucleic acid sequence located between the pair of nucleic acid sequences and encoding a protein.

Abstract: The present invention relates to [1] an aqueous composition for ink-jet printing, containing a carbodiimide compound, a polyester resin and water; [2] a ink set for ink-jet printing containing an aqueous composition a containing a carbodiimide compound and water, and an aqueous composition b containing a polyester resin; [3] an ink set for ink-jet printing, containing the aforementioned aqueous composition for ink-jet printing and a water-based ink containing a colorant; and [4] an ink-jet printing method including the step 1 of ejecting a carbodiimide compound, a polyester resin, a colorant and water onto a surface of a printing medium by an ink-jetting method to print characters or images thereon; and the step 2 of subjecting the resulting printed characters or images to heat treatment at a temperature of 50 to 200° C. According to the aqueous composition of the present invention, it is possible to obtain a printed material that is excellent in rub fatness.

Abstract: An active matrix substrate includes a plurality of thin film transistors including an oxide semiconductor layer, an interlayer insulating layer, a plurality of pixel electrodes arranged above the interlayer insulating layer, a common electrode arranged between the pixel electrode and the interlayer insulating layer and also configured to function as a touch sensor electrode, a first dielectric layer arranged between the interlayer insulating layer and the common electrode, a second dielectric layer arranged between the common electrode and the pixel electrode, a plurality of touch wiring lines arranged between the interlayer insulating layer and the common electrode and formed of a third conductive film, and a plurality of pixel contact portions, in which each of the plurality of pixel contact portions includes a drain electrode of the thin film transistor, a connection electrode formed of the third conductive film and electrically connected to the drain electrode in a lower opening formed in the interlayer i

Abstract: A power conditioner that suppresses distortion in a waveform of a sinusoidal generated voltage includes a first and second group including two switches each connected in inverse parallel and in series. The power conditioner alternately turns on and off both switches in the first group at a prescribed chopping frequency and alternately turns on and off both switches in the second group at a PWM frequency higher than the chopping frequency. If control is performed with a dead-time provided in the on/off timing for both switches in each group, the power conditioner adjusts and controls the on/off duty for the second group switches to correspond to the effective on drive in one switch by each diode during the dead-time for each switch in the first group.

Abstract: A power conditioner that suppresses generation of voltage spikes in a part of a generated sinusoidal voltage waveform. An offset between the timing of chopping, which depends on whether the voltage difference between the voltage of a third pulse voltage series and a sinusoidal voltage is positive or negative, and the timing of the switching between on/off duty cycles of a seventh and eighth switch is calculated, and the on/off duty cycles of the seventh and eighth switches are controlled on the basis of the timing offset.

Abstract: There is provided a power transistor, as well as a semiconductor integrated circuit using the power transistor, in which malfunctions of parasitic PNP transistor and circuit malfunctions due to latch-up of peripheral circuits can be prevented. In a power transistor composed of a plurality of vertical PNP transistors arrayed on a P-type silicon substrate, a singularity or plurality of electrode portions of an N+ type buried layer formed to isolate the P-type silicon substrate and collectors of the plurality of vertical PNP transistors from each other are provided in an active region of the power transistor.

Abstract: A unit transistor forming a power transistor includes a collector region, a base region, and an emitter region. A base contact portion is formed at a prescribed portion on the base region. The base region has a convex portion, which projects in the direction toward the emitter region, at a portion where the base contact portion is formed. The emitter region has, at a portion where the base region projects, a convex portion projecting in the same direction as the direction in which the base region projects. The base region has, at a portion where the emitter region projects, a concave portion. A base resistor region is expanded by the convex portion provided at the emitter region, thereby increasing the resistance value of the base resistor R.sub.B. Consequently, a power transistor having a wide area of safety operation and capable of performing operation in a stable manner can be obtained without an increase in size of the transistor.