Patents by Inventor Teshiki Shin

Teshiki Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for dry etching a silicon nitride layer
    Patent number: 5180466
    Abstract: A silicon nitride layer, particularly on a silicon dioxide layer, is dry etched successfully by using an etching gas including SF.sub.6, preferably also CH.sub.2 F.sub.2. This dry etching provides a high selectivity of etching of Si.sub.3 N.sub.4 to SiO.sub.2 and may be used for the LOCOS (local oxidation of silicon) process to reduce the width of so-called "bird beaks.
    Type: Grant
    Filed: April 4, 1991
    Date of Patent: January 19, 1993
    Assignee: Fujitsu Limited
    Inventor: Teshiki Shin