Abstract: A composition that includes a high-valent compound of copper, silver or indium; a linear, branched or cyclic C1-18 alcohol; and a Group VIII metal catalyst forms a metal film of copper, silver or indium on a substrate when the composition is coated on the substrate and heated to reduce the high-valent compound. The composition may alternatively include metal particles of silver, copper or indium in which the surface layer of the particle includes a high-valent compound of copper, silver or indium. A metal film of copper, silver or indium may also be formed on a substrate by coating a substrate with the composition including the metal particles, and heating to reduce the high-valent compound in the same manner as above.

Abstract: A phenyl-substituted 1,3,5-triazine compound represented by the general formula (1): wherein Ar1 and Ar2 independently represent substituted or unsubstituted phenyl, naphthyl or biphenylyl group; R1, R2 and R3 independently represent hydrogen atom or methyl group; X1 and X2 independently represent substituted or unsubstituted phenylene, naphthylene or pyridylene group; p and q independently represent an integer of 0 to 2; and Ar3 and Ar4 independently represent substituted or unsubstituted pyridyl or phenyl group. This compound is suitable for an organic electroluminescent device.

Abstract: A phenyl-substituted 1,3,5-triazine compound represented by the general formula (1): wherein Ar1 and Ar2 independently represent substituted or unsubstituted phenyl, naphthyl or biphenylyl group; R1, R2 and R3 independently represent hydrogen atom or methyl group; X1 and X2 independently represent substituted or unsubstituted phenylene, naphthylene or pyridylene group; p and q independently represent an integer of 0 to 2; and Ar3 and Ar4 independently represent substituted or unsubstituted pyridyl or phenyl group. This compound is suitable for an organic electroluminescent device.

Abstract: A phenyl-substituted 1,3,5-triazine compound represented by the general formula (1); wherein Ar1 and Ar2 independently represent substituted or unsubstituted phenyl, naphthyl or biphenylyl group; R1, R2 and R3 independently represent hydrogen atom or methyl group; X1 and X2 independently represent substituted or unsubstituted phenylene, naphthylene or pyridylene group; p and q independently represent an integer of 0 to 2; and Ar3 and Ar4 independently represent substituted or unsubstituted pyridyl or phenyl group. This compound is suitable for an organic electroluminescent device.

Abstract: Since the conventional electron transporters have low thermal stability, the organic electroluminescent devices using them are not sufficient in terms of the compatibility of their luminance and luminous efficiency with device lifetime. A 1,3,5-triazine derivative of formula (1) is obtained by a metal catalyst-aided coupling reaction of a compound of formula (2) with a compound of formula (3), and this is used as a composing component of an organic electroluminescent device. [In the formulae, Ar1 and Ar2 represent phenyl group or the like, R1 and R2 represent hydrogen atom or the like, R3 represents methyl or the like, m is an integer of 0 to 2, X represents 2,4-pyridylene or the like, p is 1 or 2, a and b are 1 or 2, a+b is 3, q is 0 or an integer of p or less, M represents —MgR4 group or the like, R4 represents chlorine atom or the like, r is p-q, and Y represents a leaving group.

Abstract: To provide a composition with which a metal film can be directly produced from a high-valent metal compound, a method for producing a metal film, and a method for producing a metal powder. Using a composition for production of a metal film of copper, silver or indium, which comprises a high-valent compound of copper, silver or indium, a linear, branched or cyclic C1-18 alcohol and a Group VIII metal catalyst, a coating film is formed, followed by reduction by heating to produce a metal film of copper, silver or indium. Further, using metal particles of silver, copper of indium having a surface layer comprising a high-valent compound of copper, silver or indium, instead of the high-valent compound of copper, silver or indium, a metal film of copper, silver or indium is produced in the same manner as above.

Abstract: Provided is a reaction reagent for trifluoromethylation with high general versatility and good efficiency. The reaction reagent for trifluoromethylation contains an iron compound, trifluoromethyl iodide, a sulfoxide and a peroxide, and may further contain an acid. The iron compound is, for example, iron(II) sulfate, ammonium iron(II) sulfate, iron(II) tetrafluoroborate, ferrocene, bis(?5-pentamethylcyclopentadienyl)iron or an iron powder; the sulfoxide is, for example, dimethyl sulfoxide; the peroxide is, for example, hydrogen peroxide or hydrogen peroxide-urea composite; and the acid is, for example, sulfuric acid, tetrafluoroboric acid or trifluoromethanesulfonic acid.

Abstract: Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

Abstract: Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

Abstract: Nucleobases are perfluoroalkylated in a one step process with a perfluoroalkyl halide in the presence of a sulfoxide, a peroxide and an iron compound. Compounds so produced are useful as medicinal drugs, intermediates for medicinal drugs and agricultural chemicals.

Abstract: In a process for producing 1-substituted-3-fluoroalkyl-pyrazole-4-carboxylate (3) by a reaction of 2-alkoxymethylenefluoroacylacetate (1) and hydrazine (2), the reaction is conducted in the presence of a base and water, to produce 1-substituted-3-fluoroalkylpyrazole-4-carboxylate (3) with high selectivity and yield. This novel process enables to produce 1-substituted-3-fluoroalkylpyrazole-4-carboxylate (3), which is useful as an intermediate for pharmaceuticals and agrochemicals, with high selectivity and yield by simple and safe operations.

Abstract: A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] Mp(NR4R5)q(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R1 and R3 each represents C1-6 alkyl, etc.; R2 represents C1-6 alkyl, etc.; R4 and R5 each represents C1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases).

Abstract: A phenyl-substituted 1,3,5-triazine compound represented by the general formula (1); wherein Ar1 and Ar2 independently represent substituted or unsubstituted phenyl, naphthyl or biphenylyl group; R1, R2 and R3 independently represent hydrogen atom or methyl group; X1 and X2 independently represent substituted or unsubstituted phenylene, naphthylene or pyridylene group; p and q independently represent an integer of 0 to 2; and Ar3 and Ar4 independently represent substituted or unsubstituted pyridyl or phenyl group. This compound is suitable for an organic electroluminescent device.

Abstract: Provided is a reaction reagent for trifluoromethylation with high general versatility and good efficiency. The reaction reagent for trifluoromethylation contains an iron compound, trifluoromethyl iodide, a sulfoxide and a peroxide, and may further contain an acid. The iron compound is, for example, iron(II) sulfate, ammonium iron(II) sulfate, iron(II) tetrafluoroborate, ferrocene, bis(?5-pentamethylcyclopentadienyl)iron or an iron powder; the sulfoxide is, for example, dimethyl sulfoxide; the peroxide is, for example, hydrogen peroxide or hydrogen peroxide-urea composite; and the acid is, for example, sulfuric acid, tetrafluoroboric acid or trifluoromethanesulfonic acid.

Abstract: A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] Mp(NR4R5)q(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R1 and R3 each represents C1-6 alkyl, etc.; R2 represents C1-6 alkyl, etc.; R4 and R5 each represents C1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases.

Abstract: Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

Abstract: Objects of the present invention are to provide a novel titanium complex that has good vaporization characteristics and an excellent thermal stability, and becomes a raw material for forming a titanium-containing thin film by methods such as CVD method or ALD method, its production method, a titanium-containing thin film formed using the same, and its formation method. In the invention, a titanium complex represented by the general formula (1) is produced by reacting a diimine represented by the general formula (2) and metallic lithium, and then reacting a tetrakisamide complex represented by the general formula (3). (In the formulae, R1 and R4 represent an alkyl group having from 1 to 6 carbon atoms. R2 and R3 each independently represents a hydrogen atom or an alkyl group having from 1 to 3 carbon atoms. R5 and R6 each independently represents an alkyl group having from 1 to 4 carbon atoms.).

Abstract: Since the conventional electron transporters have low thermal stability, the organic electroluminescent devices using them are not sufficient in terms of the compatibility of their luminance and luminous efficiency with device lifetime. A 1,3,5-triazine derivative of formula (1) is obtained by a metal catalyst-aided coupling reaction of a compound of formula (2) with a compound of formula (3), and this is used as a composing component of an organic electroluminescent device. [In the formulae, Ar1 and Ar2 represent phenyl group or the like, R1 and R2 represent hydrogen atom or the like, R3 represents methyl or the like, m is an integer of 0 to 2, X represents 2,4-pyridylene or the like, p is 1 or 2, a and b are 1 or 2, a+b is 3, q is 0 or an integer of p or less, M represents —MgR4 group or the like, R4 represents chlorine atom or the like, r is p-q, and Y represents a leaving group.

Abstract: A novel tantalum compound, a method for producing the novel tantalum compound, and a method for stably forming a tantalum-containing thin film which contains the desired element. The tantalum compound enables one to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element.

Abstract: Provided is a simple and efficient production process of a nucleobase having a perfluoroalkyl group. A nucleobase (for example, uracils, cytosines, adenines, guanines, hypoxanthines, xanthines, or the like) is reacted with a perfluoroalkyl halide in the presence of a sulfoxide, a peroxide and an iron compound to produce a perfluoroalkyl-substituted nucleobase, which is useful as an intermediate for medical drugs, economically.