Abstract: A semiconductor light-emitting element includes: an n-side contact electrode in contact with an n-type semiconductor layer; a p-side contact electrode in contact with a p-type semiconductor layer; an n-side first electrode in contact with the n-side contact electrode; a p-side first electrode in contact with the p-side contact electrode; a first insulating layer covering the n-side and p-side first electrodes; an n-side second electrode on the first insulating layer and in contact with the n-side first electrode; a p-side second electrode on the first insulating layer and in contact with the p-side first electrode; a second insulating layer covering the n-side and p-side second electrodes; an n-side pad electrode on the second insulating layer and in contact with the n-side second electrode; and a p-side pad electrode on the second insulating layer and in contact with the p-side second electrode.

Abstract: A semiconductor light-emitting element includes: an n-type contact layer; an n-side inserted layer provided on a first upper surface of the n-type contact layer, made of an AlGaN-based semiconductor material, and having a thickness equal to or smaller than 5 nm; an n-type clad layer provided on the n-side inserted layer; an active layer provided on the n-type clad layer and including a well layer and a barrier layer made of an AlGaN-based semiconductor material; a p-type clad layer provided on the active layer; a p-side inserted layer provided on the p-type clad layer, made of an AlGaN-based semiconductor material, and having a thickness equal to or smaller than 5 nm; and a p-type contact layer provided on the p-side inserted layer. An AlN composition of each of the n-side and p-side inserted layers is higher than an AlN composition of the barrier layer.

Abstract: A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; a p-side contact electrode made of Rh and in contact with the p-type semiconductor layer; a p-side electrode covering layer made of TiN that covers the p-side contact electrode; a dielectric protective layer that covers the n-type semiconductor layer, the active layer, the p-type semiconductor layer, and the p-side electrode covering layer; and a p-side pad electrode in contact with the p-side electrode covering layer in a p-side opening that extends through the dielectric protective layer on the p-side contact electrode.

Abstract: A semiconductor light emitting device includes a light extraction layer having a light extraction surface. Multiple cone-shaped parts formed in an array are provided on the light extraction surface of the semiconductor light emitting device. A proportion of an area occupied by the multiple cone-shaped parts per a unit area of the light extraction surface is not less than 65% and not more than 95% in a plan view of the light extraction surface, and an aspect ratio h/p defined as a proportion of a height h of the cone-shaped part relative to a distance p between apexes of adjacent cone-shaped parts is not less than 0.3 and not more than 1.0.

Abstract: A semiconductor light-emitting element is configured to emit ultraviolet light having a wavelength of 320 nm or shorter. Denoting a total area of a principal surface of a substrate as S0, an area on a p-type semiconductor layer in which a p-side contact electrode is formed as S1, an area on an n-type semiconductor layer in which an n-side contact electrode is formed as S2, a reflectivity of the p-side contact electrode for ultraviolet having a wavelength of 280 nm incident from a side of the p-type semiconductor layer as R1, and a reflectivity of the n-side contact electrode for ultraviolet light having a wavelength of 280 nm incident from a side of the n-type semiconductor layer as R2, (S1/S0)×R1+(S2/S0)×R2?0.5, S1>S2, and R1?R2.

Abstract: A nitride semiconductor light-emitting element includes an active layer including an AlGaN-based barrier layer, a p-type contact layer located on an upper side of the active layer, and an electron blocking stack body located between the active layer and the p-type contact layer. The electron blocking stack body includes a first electron blocking layer and a second electron blocking layer. The first electron blocking layer is located on the active layer side and has a higher Al composition ratio than an Al composition ratio in the barrier layer. The second electron blocking layer is located on the p-type contact layer side and has a lower Al composition ratio than an Al composition ratio in the barrier layer.

Abstract: A semiconductor light emitting element includes: an n-type semiconductor layer; an active layer provided in a first region on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; a first covering layer that is provided to cover a second region on the n-type semiconductor layer different from the first region, a side of the active layer, and the p-type semiconductor layer and that is made of aluminum oxide (Al2O3); an n-side contact electrode that extends through the first covering layer and is in contact with the n-type semiconductor layer; a p-side contact electrode that extends through the first covering layer and is in contact with the p-type semiconductor layer; and a second covering layer provided to cover the first covering layer, the n-side contact electrode, and the p-side contact electrode.

Abstract: A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; a p-side contact electrode made of Rh and in contact with the p-type semiconductor layer; a p-side electrode covering layer made of TiN that covers the p-side contact electrode; a dielectric protective layer that covers the n-type semiconductor layer, the active layer, the p-type semiconductor layer, and the p-side electrode covering layer; and a p-side pad electrode in contact with the p-side electrode covering layer in a p-side opening that extends through the dielectric protective layer on the p-side contact electrode.

Abstract: A semiconductor light-emitting element includes a p-side pad opening provided on a p-side contact electrode and an n-side pad opening provided on an n-side contact electrode, covers side surfaces of an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, covers the p-side contact electrode in a portion different from the p-side pad opening, and covers the n-side contact electrode in a portion different from the n-side pad opening. The protective layer includes a first dielectric layer made of SiO2, a second dielectric layer made of an oxide material different from a material of the first dielectric layer and covering the first dielectric layer, and a third dielectric layer made of SiO2 and covering the second dielectric layer. A carbon concentration of the first dielectric layer is smaller than a carbon concentration of the third dielectric layer.

Abstract: A deep ultraviolet light emitting device includes: a light extraction surface; an n-type semiconductor layer provided on the light extraction surface; an active layer having a band gap of 3.4 eV or larger; and a p-type semiconductor layer provided on the active layer. Deep ultraviolet light emitted by the active layer is output outside from the light extraction surface. A side surface of the active layer is inclined with respect to an interface between the n-type semiconductor layer and the active layer, and an angle of inclination of the side surface is not less than 15° and not more than 50°.

Abstract: A semiconductor light emitting element includes: an n-type clad layer of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material; an active layer of an AlGaN-based semiconductor material provided on a first top surface of the n-type clad layer; and an n-side electrode provided on a second top surface of the n-type clad layer adjacent to the first top surface. The n-side electrode includes a first metal layer on the second top surface containing titanium (Ti) and a second metal layer on the first metal layer containing aluminum (Al). A root-mean-square roughness (Rq) of a top surface of the second metal layer is 5 nm or less.

Abstract: A nitride semiconductor light-emitting element includes an active layer that emits ultraviolet light, a p-type AlGaN-based electron blocking stack body that is located on the active layer and has a structure formed by sequentially stacking a first electron blocking layer, a second electron blocking layer and a third electron blocking layer from the active layer side, and a p-type contact layer located on the electron blocking stack body. An Al composition ratio in the second electron blocking layer is lower than an Al composition ratio in the first electron blocking layer, and an Al composition ratio in the third electron blocking layer decreases from the second electron blocking layer side toward the p-type contact layer side.

Abstract: A semiconductor light-emitting element includes: an n-type clad layer of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material provided on a substrate; an active layer of an AlGaN-based semiconductor material provided on the n-type clad layer and configured to emit deep ultraviolet light having a wavelength of not shorter than 300 nm and not longer than 360 nm; and a p-type semiconductor layer provided on the active layer. The n-type clad layer is configured such that a transmittance for deep ultraviolet light having a wavelength of 300 nm or shorter is 10% or lower.

Abstract: A semiconductor light emitting element includes: an n-type semiconductor layer made of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material provided on a substrate; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; and a covering layer made of a dielectric material that covers the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. Each of the active layer and the p-type semiconductor layer has a sloped surface that is sloped at a first angle with respect to the substrate and is covered by the covering layer. The n-type semiconductor layer has a sloped surface that is sloped at a second angle larger than the first angle with respect to the substrate and is covered by the covering layer.

Abstract: A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer provided on the n-type semiconductor layer and made of an AlGaN-based semiconductor material; a p-type semiconductor layer provided on the active layer; and a p-side contact electrode that includes an Rh layer in contact with an upper surface of the p-type semiconductor layer and having a thickness of 10 nm or smaller and an Al layer in contact with an upper surface of the Rh layer and having a thickness of 20 nm or larger.

Abstract: A semiconductor light emitting element includes: an n-type semiconductor layer made of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material provided on a substrate; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; and a covering layer made of a dielectric material that covers the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. Each of the active layer and the p-type semiconductor layer has a sloped surface that is sloped at a first angle with respect to the substrate and is covered by the covering layer. The n-type semiconductor layer has a sloped surface that is sloped at a second angle larger than the first angle with respect to the substrate and is covered by the covering layer.

Abstract: A device includes: an active layer provided in a first comb tooth region on an n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; an n-side contact electrode provided in a second comb tooth region on the n-type semiconductor layer; a p-side contact electrode provided in a third comb tooth region on the p-type semiconductor layer; a protective layer having a p-side pad opening provided in a fourth comb tooth region on the p-side contact electrode, having an n-side pad opening provided in a fifth comb tooth region on the n-side contact electrode, and made of a dielectric material; a p-side pad electrode connected to the p-side contact electrode in the p-side pad opening; and an n-side pad electrode connected to the n-side contact electrode in the n-side pad opening.

Abstract: A semiconductor light emitting device includes a light extraction layer having a light extraction surface. Multiple cone-shaped parts formed in an array are provided on the light extraction surface. The cone-shaped part has a first portion having a first angle of inclination of a side surface and a second portion having a second angle of inclination of a side surface smaller than the first angle. The second portion is closer to an apex of the cone-shaped part than the first portion and has a larger height than the first portion.

Abstract: A semiconductor light emitting element includes: an n-type semiconductor layer provided on a substrate; an active layer provided in a first region of the n-type semiconductor layer and made of an AlGaN-based semiconductor material; a p-type semiconductor layer provided on the active layer; a first protective layer provided on the p-type semiconductor layer and made of silicon oxide (SiO2) or silicon oxynitride (SiON); a second protective layer provided to cover a top of the first protective layer, a second region on the n-type semiconductor layer different from the first region, and a lateral surface of the active layer and made of aluminum oxide (Al2O3), aluminum oxynitride (AlON), or aluminum nitride (AlN); a p-side electrode provided contiguously on the p-type semiconductor layer; and an n-side electrode provided contiguously on the n-type semiconductor layer.

Abstract: A nitride semiconductor light-emitting element includes a light-emitting layer comprising a well layer comprising AlGaN and emitting ultraviolet light; an electron blocking layer being located on the light-emitting layer and comprising AlGaN with a first Al composition ratio higher than an Al composition ratio of the well layer; and a p-type cladding layer being located on the electron blocking layer, comprising AlGaN with a second Al composition ratio higher than the Al composition ratio of the well layer and lower than the first Al composition ratio, and being doped with a predetermined concentration of a p-type dopant. An interface between the electron blocking layer and the p-type cladding layer is doped with not less than a predetermined amount of an n-type dopant.