Patents by Inventor Tetsuhiro Iwashita

Tetsuhiro Iwashita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8981275
    Abstract: A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
    Type: Grant
    Filed: July 13, 2011
    Date of Patent: March 17, 2015
    Assignee: Sony Corporation
    Inventors: Yoshinori Toumiya, Keiji Tatani, Haruhiko Ajisawa, Yuji Inoue, Tetsuhiro Iwashita, Hideaki Kato
  • Patent number: 8525098
    Abstract: A solid-state image pickup device including a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
    Type: Grant
    Filed: June 17, 2011
    Date of Patent: September 3, 2013
    Assignee: Sony Corporation
    Inventors: Yoshinori Toumiya, Keiji Tatani, Haruhiko Ajisawa, Yuji Inoue, Tetsuhiro Iwashita, Hideaki Kato
  • Publication number: 20110267512
    Abstract: A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
    Type: Application
    Filed: July 13, 2011
    Publication date: November 3, 2011
    Applicant: SONY CORPORATION
    Inventors: Yoshinori Toumiya, Keiji Tatani, Haruhiko Ajisawa, Yuji Inoue, Tetsuhiro Iwashita, Hideaki Kato
  • Publication number: 20110248146
    Abstract: A solid-state image pickup device including a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
    Type: Application
    Filed: June 17, 2011
    Publication date: October 13, 2011
    Applicant: SONY CORPORATION
    Inventors: Yoshinori Toumiya, Keiji Tatani, Haruhiko Ajisawa, Yuji Inoue, Tetsuhiro Iwashita, Hideaki Kato
  • Patent number: 8003929
    Abstract: A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
    Type: Grant
    Filed: October 15, 2009
    Date of Patent: August 23, 2011
    Assignee: Sony Corporation
    Inventors: Yoshinori Toumiya, Keiji Tatani, Haruhiko Ajisawa, Yuji Inoue, Tetsuhiro Iwashita, Hideaki Kato
  • Patent number: 7973271
    Abstract: A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
    Type: Grant
    Filed: December 5, 2007
    Date of Patent: July 5, 2011
    Assignee: Sony Corporation
    Inventors: Yoshinori Toumiya, Keiji Tatani, Haruhiko Ajisawa, Yuji Inoue, Tetsuhiro Iwashita, Hideaki Kato
  • Publication number: 20100025571
    Abstract: A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
    Type: Application
    Filed: October 15, 2009
    Publication date: February 4, 2010
    Applicant: SONY CORPORATION
    Inventors: Yoshinori Toumiya, Keiji Tatani, Haruhiko Ajisawa, Yuji Inoue, Tetsuhiro Iwashita, Hideaki Kato
  • Publication number: 20080135732
    Abstract: A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
    Type: Application
    Filed: December 5, 2007
    Publication date: June 12, 2008
    Applicant: SONY CORPORATION
    Inventors: Yoshinori Toumiya, Keiji Tatani, Haruhiko Ajisawa, Yuji Inoue, Tetsuhiro Iwashita, Hideaki Kato