Patents by Inventor Tetsuhiro Morimoto

Tetsuhiro Morimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Combined semiconductor rectifying device and the electric power converter using the same
    Patent number: 8643345
    Abstract: A combined semiconductor rectifying device includes PN-junction silicon diode and Schottky barrier diode exhibiting a breakdown voltage higher than the breakdown voltage of PN-junction silicon diode, and Schottky barrier diode is made of a semiconductor, the band gap thereof is wider than the band gap of silicon. The combined semiconductor rectifying device exhibits a shortened reverse recovery time, low reverse leakage current characteristics and a high breakdown voltage, and is used advantageously in an electric power converter.
    Type: Grant
    Filed: March 5, 2010
    Date of Patent: February 4, 2014
    Assignee: Fuji Electric Co., Ltd.
    Inventor: Tetsuhiro Morimoto
  • COMBINED SEMICONDUCTOR RECTIFYING DEVICE AND THE ELECTRIC POWER CONVERTER USING THE SAME
    Publication number: 20100253312
    Abstract: A combined semiconductor rectifying device includes PN-junction silicon diode and Schottky barrier diode exhibiting a breakdown voltage higher than the breakdown voltage of PN-junction silicon diode, and Schottky barrier diode is made of a semiconductor, the band gap thereof is wider than the band gap of silicon. The combined semiconductor rectifying device exhibits a shortened reverse recovery time, low reverse leakage current characteristics and a high breakdown voltage, and is used advantageously in an electric power converter.
    Type: Application
    Filed: March 5, 2010
    Publication date: October 7, 2010
    Applicant: FUJI ELECTRIC SYSTEMS CO. LTD.
    Inventor: Tetsuhiro Morimoto
  • Over-current protection apparatus for transistor
    Patent number: 5621601
    Abstract: The disclosed invention is designed to prevent the oscillation which often occurs in an over-current protection apparatus for an insulated gate controlled transistor. The apparatus improves the response in current detection, to prevent oscillation, and improves protection speed against over-current.
    Type: Grant
    Filed: September 28, 1994
    Date of Patent: April 15, 1997
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Tatsuhiko Fujihira, Shin Kiuchi, Kazuhiko Yoshida, Yukio Yano, Kazunori Oyabe, Shoichi Furuhata, Tetsuhiro Morimoto