Abstract: The present invention resides in a silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material in a quartz crucible based on a Czochralski method, wherein the method comprises the steps of: applying a DC voltage between an outer wall of the quartz crucible acts as a positive electrode and a pulling wire or pulling shaft for pulling up the silicon single crystal acts as a negative electrode; and fixing an electric current flowing through the silicon single crystal over a period of time for pulling up the single crystal, to grow the single crystal; as well as a pulling apparatus therefor.

Abstract: The present invention resides in a silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material in a quartz crucible based on a Czochralski method, wherein the method comprises the steps of: applying a DC voltage between an outer wall of the quartz crucible acts as a positive electrode and a pulling wire or pulling shaft for pulling up the silicon single crystal acts as a negative electrode; and fixing an electric current flowing through the silicon single crystal over a period of time for pulling up the single crystal, to grow the single crystal; as well as a pulling apparatus therefor. This allows for provision of the silicon single crystal growth method and the pulling apparatus therefor, capable of generating appropriately crystallized layers, i.e.

Abstract: In a Czochralski method for producing a silicon single crystal by growing the crystal, the pulling rate of the single crystal is gradually increased during formation of a tail part after formation of a predetermined or constant diameter part of the single crystal. The length t of the tail part is defined to be a or more, where a represents a distance from the tip end of the tail part to a position of an extraordinary oxygen precipitation area when the tail part is formed after the predetermined or constant diameter part is grown. Productivity and yield of the silicon single crystal are improved by preventing rapid change in temperature while the single crystal is separated from the melt in the tailing process, to suppress generation of an area where the amount of precipitated oxygen is extraordinarily large and an OSF ring due to rapid increase in temperature when the tail part is formed, in the predetermined or constant diameter part near the tail part.

Abstract: A method and a mechanism for lifting a gas flow-guide cylinder of a crystal pulling apparatus are disclosed. The crystal pulling apparatus includes a crucible for accommodating a crystalline material and for melting the crystalline material through heating, and a gas flow-guide cylinder capable of being moved upward/downward above the crucible. The crystal pulling apparatus is operated to grow a single crystal from the crystalline material by a pulling method. When a solid crystalline material is to be placed in the crucible, the gas flow-guide cylinder is moved upward to thereby separate the bottom end of the gas flow-guide cylinder away from the top portion of the crucible. This prevents the crystalline material from coming into contact with the gas flow-guide cylinder.

Abstract: A device for pulling a silicon single crystal is constructed so as to preclude deposition of a SiO-derived substance on graphite parts inside the device and prevent the graphite parts from deterioration, elongate the duration of continuous use of the device in a great measure, and simplify the disassembly and reassembly of the device.This device pulls a silicon single crystal in an atmosphere of inert gas by the Czochralski method, which device is chracterized by comprising a crucible 1 for accommodating a molten silicon mass 2, a heater 3 disposed round the periphery of the crucible 1, an outer member 14 forming a pulling chamber 6 for accomodating the crucible 1, an inert gas inlet part 15 disposed in the upper part of the pulling chamber 6, and an inert gas outlet part 16 separated from the inert gas inlet part 15 in the same upper part of the pulling chamber 6.

Abstract: A method of producing a Czochralski-grown silicon single crystal stably and efficiently with high production yield comprises the steps of setting pulling conditions such that at least a portion of a growing silicon single crystal having a temperature in excess of 1150.degree. C. is spaced upwardly from a surface of silicon melt by a distance greater than 280 mm; and pulling the growing silicon single crystal upward while maintaining the pulling conditions. The silicon single crystal produced by this method has an excellent oxide film dielectric breakdown strength. An apparatus for carrying out the method is also disclosed.

Abstract: A method for controlling an oxygen concentration of a single crystal which is pulled up in a Czochralski-method type single crystal pulling apparatus having a hermetical chamber in which the single crystal is pulled up and an inert gas supply and exhaust system by means of which an inert gas is supplied to the hermetical chamber and exhausted therefrom; the method being characterized in that the pneumatic pressure in the hermetical chamber and the supply rate of the inert gas are controlled in accordance with a prepared control pattern with respect to the proportion of the length of the as-grown crystal to the aimed final length thereof or with respect to the passage of time.