Abstract: A dielectric composition including a tungsten bronze type composite oxide as a main component represented by (Ba1-xSrx)aRbZrcTadO30+0.5e in terms of an atomic ratio. In the dielectric composition, c=(2a+3b?10)?e and d=(20?2a?3b)+e are satisfied. R includes at least one selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc. In the dielectric composition, 0.000?x?0.500, 5.100?a?5.860, 0.000?b?0.100, and ?0.150?e?0.150 are satisfied.

Abstract: In order to provide a dielectric composition having high density even when fired at a relatively low temperature, the main component of a dielectric composition includes tantalum and at least one of barium or strontium, and the subcomponent of the dielectric composition includes at least one element selected from the group consisting of vanadium, titanium, and aluminum.

Abstract: A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; a second electrode layer contacting the dielectric film without contacting the metal foil; and an insulating member provided on the upper surface of the metal foil to surround the first and second electrode layers. The metal foil has an outer peripheral area which is positioned outside an area surrounded by the insulating member and which is not covered with the first and second electrode layers. A height of the electrode layer is equal to or higher than a height of the insulating member. This makes the outer peripheral portion of the thin film capacitor have a step-like shape.

Abstract: To provide a thin film capacitor in which peeling-off of an electrode layer is less likely to occur. A thin film capacitor includes a metal foil having a roughened upper surface, a dielectric film covering the upper surface of the metal foil and having an opening for partly exposing the metal foil therethrough, a first electrode layer contacting the metal foil through the opening and further contacting the dielectric film, and a second electrode layer contacting the dielectric film without contacting the metal foil. With this configuration, both the first and second electrode layers can be disposed on the upper surface of the metal foil. In addition, the first electrode layer contacts not only the metal foil but also the dielectric film, making peeling of the first electrode layer less likely to occur.

Abstract: A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; a second electrode layer contacting the dielectric film without contacting the metal foil; and an insulating member separating the first and second electrode layers. The insulating member has a tapered shape in cross section. With the above configuration, both the first and second electrode layers can be disposed on the upper surface of the metal foil. In addition, since the insulating member has a tapered shape in cross section, adhesion performance of the insulating member can be enhanced, thus making it possible to prevent short-circuit between the first and second electrode layers.

Abstract: To provide a thin film capacitor in which warpage is less likely to occur. A thin film capacitor includes: a metal foil having roughened upper and lower surfaces; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a dielectric film covering the lower surface of the metal foil and made of a dielectric material having a thermal expansion coefficient smaller than that of the metal foil; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the first dielectric film without contacting the metal foil. The lower surface of the metal foil is thus covered with the dielectric film having a small thermal expansion coefficient, thereby making it possible to prevent the occurrence of warpage.

Abstract: To provide a thin film capacitor having high adhesion with respect to a circuit substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. An angle ?a formed by the other main surface of the metal foil and a side surface thereof is more than 20° and less than 80°. The side surface is thus tapered at an angle of more than 20° and less than 80°, so that it is possible to suppress warpage and to enhance adhesion with respect to a multilayer substrate when the thin film capacitor is embedded in the multilayer substrate.

Abstract: To provide a thin film capacitor having high flexibility. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. The particle diameter of crystal at a non-roughened center part of the metal foil is less than 15 ?m in the planar direction and less than 5 ?m in the thickness direction. This can not only enhance the flexibility of the metal foil to reduce a short-circuit failure in a state where the thin film capacitor is incorporated in a multilayer substrate but also enhance positional accuracy.

Abstract: To provide a thin film capacitor having high adhesion performance with respect to a circuit substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. The first and second electrode layers are formed in an area surrounded by an outer peripheral area of the upper surface of the metal foil so as not to cover the outer peripheral area. The outer peripheral area of the roughened upper surface of the metal foil is thus exposed, so that adhesion performance with respect to a circuit substrate can be enhanced.

Abstract: Provided is a dielectric composition containing: a main component expressed by {BaxSr(1-x)}mTa4O12; and a first subcomponent, m satisfying a relationship of 1.95?m?2.40. The first subcomponent includes silicon and magnesium. When the amount of the main component contained in the dielectric composition is set to 100 parts by mole, the amount of silicon contained in the dielectric composition is 7.5 to 15.0 parts by mole in terms of SiO2, and the amount of magnesium contained in the dielectric composition is 5.0 to 22.5 parts by mole in terms of MgO.

Abstract: A dielectric composition includes a main component containing tantalum and at least one of barium or strontium, and a subcomponent containing calcium and silicon.

Abstract: A ceramic electronic device includes an element body including a ceramic layer and an internal electrode layer, and an external electrode formed on an end surface of the element body and electrically connected to at least one end of the internal electrode layer. The external electrode includes a baked electrode layer. The baked electrode layer includes a main component comprising copper and/or a copper alloy. The baked electrode layer includes a void. An inner wall surface defining the void is at least partly covered by a film comprising nickel and/or a nickel alloy.

Abstract: Provided is a dielectric composition containing: a main component expressed by {BaxSr(1-x)}mTa4O12; and a first subcomponent, m satisfying a relationship of 1.95?m?2.40. The first subcomponent includes silicon and manganese. When the amount of the main component contained in the dielectric composition is set to 100 parts by mole, the amount of silicon contained in the dielectric composition is 5.0 to 20.0 parts by mole in terms of SiO2, and the amount of manganese contained in the dielectric composition is 1.0 to 4.5 parts by mole in terms of MnO.

Abstract: In order to provide a dielectric composition having high relative permittivity at a wide range of temperatures, the main component of a dielectric composition includes strontium and tantalum.

Abstract: In order to provide a dielectric composition having high density even when fired at a relatively low temperature, the main component of a dielectric composition includes tantalum and at least one of barium or strontium, and the subcomponent of the dielectric composition includes at least one element selected from the group consisting of vanadium, titanium, and aluminum.

Abstract: A ceramic electronic device including a ceramic body having ceramic layers and internal electrode layers stacked in alternating manner and a terminal electrode formed at an end face of the ceramic body. The terminal electrode includes a base electrode including a metal component and a glass component, an intermediate electrode layer including Ni and formed at an outer face of the base electrode layer, and an upper electrode layer including Pd or Au and formed at an outer face of the intermediate electrode layer. Also, a surface roughness Ra1 of the base electrode layer in the terminal electrode is 5.0 ?m or less; or the surface roughness Ra1 of the base electrode layer, a surface roughness Ra2 of the intermediate electrode layer, and a surface roughness Ra3 of the upper electrode layer satisfy a relationship of Ra1>Ra3?Ra2.

Abstract: The present invention relates to a ceramic electronic device including a ceramic body having ceramic layers and internal electrode layers stacked in alternating manner and a terminal electrode formed at an end face of the ceramic body. The terminal electrode includes a base electrode including a metal component and a glass component, an intermediate electrode layer including Ni and formed at an outer face of the base electrode layer, and an upper electrode layer including Pd or Au and formed at an outer face of the intermediate electrode layer. Also, a surface roughness Ra1 of the base electrode layer in the terminal electrode is 5.0 ?m or less; or the surface roughness Ra1 of the base electrode layer, a surface roughness Ra2 of the intermediate electrode layer, and a surface roughness Ra3 of the upper electrode layer satisfy a relationship of Ra1>Ra3?Ra2.

Abstract: To improve a mounting reliability while maintaining a thickness of the external electrode at a side face of a multilayer electronic component thin. The multilayer electronic component includes ceramic body in which ceramic layers and an external electrode formed to an end face of the ceramic body. The upper electrode layer includes an element having higher standard electrode potential than Cu. The external electrode includes an external electrode end part and an external electrode extension part which is integrally formed with the external electrode end part. 1.20?t2/t1?4.50 is satisfied in which t1 is a total thickness of a thickness of the intermediate electrode layer thickness and t2 is a length from an end of the base electrode layer to an end of the upper electrode layer along the first axis of the external electrode extension part connected by the conductive adhesive.

Abstract: A dielectric composition comprising a main component expressed by a chemical formula of (A6-xBxCx+2D8-xO30, 0?x?5), wherein said “A” component is at least one element selected form the group consisting of Ba, Ca, and Sr, said “B” component is at least one element selected from the group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, said “C” component is at least one element selected from the group consisting of Ti, and Zr, said “D” component is at least one element selected from the group consisting of Nb, and Ta, and said dielectric composition comprises 2.50 mol or more and 20.00 mol or less of an oxide of Ge as a first sub component with respect to 100 mol of said main component.

Abstract: A dielectric composition is provided. The dielectric composition includes a tungsten bronze type complex oxide expressed by a chemical formula (K1-xNax)Sr2Nb5O15 as a main component, x satisfying 0?x?0.50, wherein the dielectric composition includes a secondary phase of at least one or more selected from: MgO.SiO2; BaO.2MgO.2SiO2; and 2MgO.B2O3; or the dielectric composition includes a tungsten bronze type complex oxide expressed by a chemical formula (K1-xNax)Sr2Nb5O15 as a main component, x satisfying 0?x?0.40, wherein the dielectric composition includes: MgO; BaO; B2O3; SiO2; and P2O5 as a first accessory component in a total content of 2.5 mol to 20.0 mol per 100 mol of the main component.