Patents by Inventor Tetsuhiro Tanaka

Tetsuhiro Tanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210210518
    Abstract: A display device includes a polycrystalline semiconductor including a channel, a first electrode, and a second electrode of a driving transistor, a first gate insulating layer, a gate electrode of a driving transistor, a first electrode of a boost capacitor, a second gate insulating layer, a first interlayer insulating layer, an oxide semiconductor including a channel, a first electrode, and a second electrode of a second transistor, a channel, a first electrode, and a second electrode of a third transistor, and a second electrode of a boost capacitor, a third gate insulating layer disposed on the oxide semiconductor, a gate electrode of the second transistor overlapping the channel of the second transistor, a gate electrode of the third transistor overlapping the channel of the third transistor, and a second interlayer insulating layer disposed on the gate electrode of the second transistor and the gate electrode of the third transistor.
    Type: Application
    Filed: August 6, 2020
    Publication date: July 8, 2021
    Applicant: Samsung Display Co., LTD.
    Inventors: Tetsuhiro TANAKA, Yeong-Gyu KIM, Ki Seong SEO, Seung Hyun LEE, Chang Ho YI
  • Patent number: 11049974
    Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.
    Type: Grant
    Filed: March 30, 2020
    Date of Patent: June 29, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hideomi Suzawa, Tetsuhiro Tanaka, Hirokazu Watanabe, Yuhei Sato, Yasumasa Yamane, Daisuke Matsubayashi
  • Publication number: 20210184042
    Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.
    Type: Application
    Filed: February 4, 2021
    Publication date: June 17, 2021
    Inventors: Tetsuhiro TANAKA, Mitsuhiro ICHIJO, Toshiya ENDO, Akihisa SHIMOMURA, Yuji EGI, Sachiaki TEZUKA, Shunpei YAMAZAKI
  • Patent number: 10971491
    Abstract: A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.
    Type: Grant
    Filed: May 29, 2018
    Date of Patent: April 6, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuhiro Tanaka, Yutaka Okazaki
  • Patent number: 10950734
    Abstract: A semiconductor device includes a semiconductor, a first conductor, a second conductor, a third conductor, a fourth conductor, a first insulator, a second insulator, a third insulator, and a fourth insulator. The first conductor and the semiconductor partly overlap with each other with the first insulator positioned therebetween. The second conductor and the third conductor have regions in contact with the semiconductor. The semiconductor has a region in contact with the second insulator. The fourth insulator has a first region and a second region. The first region is thicker than the second region. The first region has a region in contact with the second insulator. The second region has a region in contact with the third insulator. The fourth conductor and the second insulator partly overlap with each other with the fourth insulator positioned therebetween.
    Type: Grant
    Filed: January 16, 2019
    Date of Patent: March 16, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Sachiaki Tezuka, Tetsuhiro Tanaka, Toshiya Endo, Mitsuhiro Ichijo
  • Patent number: 10944014
    Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: March 9, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akihisa Shimomura, Yuhei Sato, Yasumasa Yamane, Yoshitaka Yamamoto, Hideomi Suzawa, Tetsuhiro Tanaka, Yutaka Okazaki, Naoki Okuno, Takahisa Ishiyama
  • Publication number: 20210057587
    Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.
    Type: Application
    Filed: August 31, 2020
    Publication date: February 25, 2021
    Inventors: Yutaka OKAZAKI, Akihisa SHIMOMURA, Naoto YAMADE, Tomoya TAKESHITA, Tetsuhiro TANAKA
  • Patent number: 10923600
    Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: February 16, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuhiro Tanaka, Mitsuhiro Ichijo, Toshiya Endo, Akihisa Shimomura, Yuji Egi, Sachiaki Tezuka, Shunpei Yamazaki
  • Patent number: 10763373
    Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.
    Type: Grant
    Filed: March 28, 2019
    Date of Patent: September 1, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yutaka Okazaki, Akihisa Shimomura, Naoto Yamade, Tomoya Takeshita, Tetsuhiro Tanaka
  • Publication number: 20200243669
    Abstract: To provide a semiconductor device including an oxide semiconductor layer with high and stable electrical characteristics, the semiconductor device is manufactured by forming a first insulating layer, forming oxide over the first insulating layer and then removing the oxide n times (n is a natural number), forming an oxide semiconductor layer over the first insulating layer, forming a second insulating layer over the oxide semiconductor layer, and forming a conductive layer over the second insulating layer. Alternatively, the semiconductor device is manufactured by forming the oxide semiconductor layer over the first insulating layer, forming the second insulating layer over the oxide semiconductor layer, forming the oxide over the second insulating layer and then removing the oxide n times (n is a natural number), and forming the conductive layer over the second insulating layer.
    Type: Application
    Filed: January 31, 2020
    Publication date: July 30, 2020
    Inventors: Tetsuhiro Tanaka, Ryo Tokumaru, Yasumasa Yamane, Akihisa Shimomura, Naoki Okuno
  • Publication number: 20200227566
    Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.
    Type: Application
    Filed: March 30, 2020
    Publication date: July 16, 2020
    Inventors: Shunpei YAMAZAKI, Hideomi SUZAWA, Tetsuhiro TANAKA, Hirokazu WATANABE, Yuhei SATO, Yasumasa YAMANE, Daisuke MATSUBAYASHI
  • Patent number: 10672913
    Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.
    Type: Grant
    Filed: July 2, 2018
    Date of Patent: June 2, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hideomi Suzawa, Tetsuhiro Tanaka, Hirokazu Watanabe, Yuhei Sato, Yasumasa Yamane, Daisuke Matsubayashi
  • Publication number: 20200152671
    Abstract: A miniaturized transistor with reduced parasitic capacitance and highly stable electrical characteristics is provided. High performance and high reliability of a semiconductor device including the transistor is achieved. A first conductor is formed over a substrate, a first insulator is formed over the first conductor, a layer that retains fixed charges is formed over the first insulator, a second insulator is formed over the layer that retains fixed charges, and a transistor is formed over the second insulator. Threshold voltage Vth is controlled by appropriate adjustment of the thicknesses of the first insulator, the second insulator, and the layer that retains fixed charges.
    Type: Application
    Filed: January 8, 2020
    Publication date: May 14, 2020
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Tetsuhiro TANAKA, Kazuki TANEMURA, Daisuke MATSUBAYASHI
  • Patent number: 10600918
    Abstract: Provided is a semiconductor device having a structure with which a decrease in electrical characteristics that becomes more significant with miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film, a gate electrode overlapping with the first oxide semiconductor film, a first gate insulating film between the first oxide semiconductor film and the gate electrode, and a second gate insulating film between the first gate insulating film and the gate electrode. In the first gate insulating film, a peak appears at a diffraction angle 2? of around 28° by X-ray diffraction. A band gap of the first oxide semiconductor film is smaller than a band gap of the first gate insulating film, and the band gap of the first gate insulating film is smaller than a band gap of the second gate insulating film.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: March 24, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuhiro Tanaka, Toshihiko Takeuchi, Yasumasa Yamane
  • Patent number: 10553690
    Abstract: A miniaturized transistor with reduced parasitic capacitance and highly stable electrical characteristics is provided. High performance and high reliability of a semiconductor device including the transistor is achieved. A first conductor is formed over a substrate, a first insulator is formed over the first conductor, a layer that retains fixed charges is formed over the first insulator, a second insulator is formed over the layer that retains fixed charges, and a transistor is formed over the second insulator. Threshold voltage Vth is controlled by appropriate adjustment of the thicknesses of the first insulator, the second insulator, and the layer that retains fixed charges.
    Type: Grant
    Filed: July 27, 2016
    Date of Patent: February 4, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuhiro Tanaka, Kazuki Tanemura, Daisuke Matsubayashi
  • Patent number: 10553704
    Abstract: To provide a semiconductor device including an oxide semiconductor layer with high and stable electrical characteristics, the semiconductor device is manufactured by forming a first insulating layer, forming oxide over the first insulating layer and then removing the oxide n times (n is a natural number), forming an oxide semiconductor layer over the first insulating layer, forming a second insulating layer over the oxide semiconductor layer, and forming a conductive layer over the second insulating layer. Alternatively, the semiconductor device is manufactured by forming the oxide semiconductor layer over the first insulating layer, forming the second insulating layer over the oxide semiconductor layer, forming the oxide over the second insulating layer and then removing the oxide n times (n is a natural number), and forming the conductive layer over the second insulating layer.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: February 4, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuhiro Tanaka, Ryo Tokumaru, Yasumasa Yamane, Akihisa Shimomura, Naoki Okuno
  • Patent number: 10522397
    Abstract: A miniaturized transistor is provided. A first layer is formed over a third insulator over a semiconductor; a second layer is formed over the first layer; an etching mask is formed over the second layer; the second layer is etched using the etching mask until the first layer is exposed to form a third layer; a selective growth layer is formed on a top surface and a side surface of the third layer; the first layer is etched using the third layer and the selective growth layer until the third insulator is exposed to form a fourth layer; and the third insulator is etched using the third layer, the selective growth layer, and the fourth layer until the semiconductor is exposed to form a first insulator.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: December 31, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuta Endo, Hideomi Suzawa, Sachiaki Tezuka, Tetsuhiro Tanaka, Toshiya Endo, Mitsuhiro Ichijo
  • Publication number: 20190341495
    Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.
    Type: Application
    Filed: July 17, 2019
    Publication date: November 7, 2019
    Inventors: Shunpei YAMAZAKI, Akihisa SHIMOMURA, Yuhei SATO, Yasumasa YAMANE, Yoshitaka YAMAMOTO, Hideomi SUZAWA, Tetsuhiro TANAKA, Yutaka OKAZAKI, Naoki OKUNO, Takahisa ISHIYAMA
  • Patent number: 10374097
    Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: August 6, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akihisa Shimomura, Yuhei Sato, Yasumasa Yamane, Yoshitaka Yamamoto, Hideomi Suzawa, Tetsuhiro Tanaka, Yutaka Okazaki, Naoki Okuno, Takahisa Ishiyama
  • Publication number: 20190237586
    Abstract: A miniaturized transistor is provided. A first layer is formed over a third insulator over a semiconductor; a second layer is formed over the first layer; an etching mask is formed over the second layer; the second layer is etched using the etching mask until the first layer is exposed to form a third layer; a selective growth layer is formed on a top surface and a side surface of the third layer; the first layer is etched using the third layer and the selective growth layer until the third insulator is exposed to form a fourth layer; and the third insulator is etched using the third layer, the selective growth layer, and the fourth layer until the semiconductor is exposed to form a first insulator.
    Type: Application
    Filed: March 15, 2019
    Publication date: August 1, 2019
    Inventors: Yuta ENDO, Hideomi SUZAWA, Sachiaki TEZUKA, Tetsuhiro TANAKA, Toshiya ENDO, Mitsuhiro ICHIJO