Abstract: A film thickness measurement device 1A includes a light emission unit 10 for emitting light onto a measurement object 100, a light detection unit 20A for detecting the wavelength-dependent intensity of reflected light, and a film thickness calculation unit 30A for determining the film thickness of a first film 102 by comparing measured spectral reflectance obtained based on the detection result in the light detection unit 20A with theoretical spectral reflectance that takes into account front surface reflectance, front surface transmissivity, and back surface reflectance. The film thickness calculation unit 30A compares the measured spectral reflectance with a plurality of values of the theoretical spectral reflectance obtained by changing the front surface reflectance value, the front surface transmissivity value, and the back surface reflectance value, and determines the film thickness of the first film 102 based on the theoretical spectral reflectance closest to the measured spectral reflectance.

Abstract: A film thickness measurement device 1A includes a light emission unit 10 for emitting light onto a measurement object 100, a light detection unit 20A for detecting the wavelength-dependent intensity of reflected light, and a film thickness calculation unit 30A for determining the film thickness of a first film 102 by comparing measured spectral reflectance obtained based on the detection result in the light detection unit 20A with theoretical spectral reflectance that takes into account front surface reflectance, front surface transmissivity, and back surface reflectance. The film thickness calculation unit 30A compares the measured spectral reflectance with a plurality of values of the theoretical spectral reflectance obtained by changing the front surface reflectance value, the front surface transmissivity value, and the back surface reflectance value, and determines the film thickness of the first film 102 based on the theoretical spectral reflectance closest to the measured spectral reflectance.

Abstract: A film thickness measurement apparatus includes a measurement light source which supplies measurement light containing wavelength components over a predetermined band to a semiconductor film, a spectroscopic optical system and a photodetector which detect intensities of output light formed by superimposing reflected light components from an upper surface and a lower surface of the semiconductor film at each time point by wavelength, and a film thickness analysis section which obtains a temporal change in film thickness of the semiconductor film. The film thickness analysis section obtains a value corresponding to a peak wavelength where the intensity of interfering light generated by the reflected light from the upper surface and the reflected light from the lower surface interfering with each other is maximized or minimized or an interval of the adjacent peak wavelengths based on spectral waveforms of the output light detected at mutually different time points.

Abstract: A reflectivity measuring device 1 includes a measurement light source 30 that supplies irradiation light L1 to a measurement object, a spectroscopic detection unit 80 that detects, at multi-wavelength, intensity of the irradiation light L1 and intensity of reflected light L2 from the measurement object, a coefficient recording unit 92 that records a conversion coefficient K(?) for converting a detected value of each wavelength's intensity of the irradiation light L1 into a value corresponding to a detected value of each wavelength's intensity of reflected light L2 from a reference measurement object, and a reflectivity calculation unit 93 that calculates each wavelength's reflectivity based on the value corresponding to the each wavelength's intensity of the reflected light L2 from the reference measurement object obtained from the detected value of the each wavelength's intensity of the irradiation light L1 and the conversion coefficient K(?).

Abstract: A film thickness measurement apparatus includes a measurement light source that supplies measurement light containing a measurement light component with a first wavelength and a measurement light component with a second wavelength to a measuring object, a spectroscopic optical system that decomposes interfering light of reflected light from the upper surface and reflected light from the lower surface of the measuring object into an interfering light component with the first wavelength and an interfering light component with the second wavelength, photodetectors that detect intensities of the first and second interfering light components at each time point, and a film thickness analysis section that obtains a temporal change in film thickness of the measuring object based on a phase difference between a first phase in a temporal change in detected intensity of the first interfering light component and a second phase in a temporal change in detected intensity of the second interfering light component.

Abstract: A reflectivity measuring device 1 includes a measurement light source 30 that supplies irradiation light L1 to a measurement object, a spectroscopic detection unit 80 that detects, at multi-wavelength, intensity of the irradiation light L1 and intensity of reflected light L2 from the measurement object, a coefficient recording unit 92 that records a conversion coefficient K(?) for converting a detected value of each wavelength's intensity of the irradiation light L1 into a value corresponding to a detected value of each wavelength's intensity of reflected light L2 from a reference measurement object, and a reflectivity calculation unit 93 that calculates each wavelength's reflectivity based on the value corresponding to the each wavelength's intensity of the reflected light L2 from the reference measurement object obtained from the detected value of the each wavelength's intensity of the irradiation light L1 and the conversion coefficient K(?).

Abstract: A film thickness measurement apparatus 1A includes a measurement light source 28 which supplies measurement light containing wavelength components over a predetermined band to a semiconductor film 15, a spectroscopic optical system 30 and a photodetector 31 which detect intensities of output light formed by superimposing reflected light components from an upper surface and a lower surface of the semiconductor film 15 at each time point by wavelength, and a film thickness analysis section 40 which obtains a temporal change in film thickness d of the semiconductor film 15.

Abstract: A film thickness measurement apparatus 1A includes a measurement light source 28 that supplies measurement light containing a measurement light component with a first wavelength ?1 and a measurement light component with a second wavelength ?2 to a measuring object 15, a spectroscopic optical system 30 that decomposes interfering light of reflected light from the upper surface and reflected light from the lower surface of the measuring object 15 into an interfering light component with the first wavelength ?1 and an interfering light component with the second wavelength ?2, photodetectors 31 and 32 that detect intensities of the first and second interfering light components at each time point, and a film thickness analysis section 40.