Abstract: A battery simulator includes a circuit simulator that simulates an operation of an RC parallel circuit which is an equivalent circuit of a battery to be monitored and an RC parallel circuit optimization device that optimizes the RC parallel circuit based on a monitoring frequency of the battery, wherein the RC parallel circuit optimization device is configured to: delete a capacitance value of the RC parallel circuit when the monitoring frequency is determined to be a low frequency, and delete resistance and capacitance values of the RC parallel circuit when the monitoring frequency is determined to be a high frequency.

Abstract: A thin-film forming apparatus is provided capable of forming a thin-film by bringing ions of some degree in plasma into contact with the thin-film. This thin-film forming apparatus comprises a plasma generator disposed at a position corresponding to an opening of a vacuum chamber for producing plasma in the vacuum chamber, a base plate holder for holding a substrate in the vacuum chamber, and an ion quencher disposed between the plasma generator and the base plate holder. When the plasma generator is projected directly onto the base plate holder, the projection image of plasma generator shielded by the ion quencher has an area smaller than the residual image of plasma generator projected onto the base plate holder.

Abstract: A process for determination of blackening of a lamp in which the blackening of a lamp can be determined without visual inspection in real time or during operation is achieved by the spectral radiant energy which is emitted by the lamp bulb being measured and evaluated based on the difference that exists between when blackening occurs as compared to when blackening does not occur. Therefore, blackening of a lamp can be determined by determining the change of the spectral radiant energy emitted by the bulb. Furthermore, in a lamp in which the bulb temperature changes, the spectral radiant energy emitted by the bulb can be measured at two different wavelengths and blackening of the lamp can be determined based on the change of the ratio relative to each other.

Abstract: Treating of a workpiece which frequently undergoes heat-induced changes such as deformation, color changes and the like without using a cooling means for the workpiece is achieved by the fact that, of the light which was incident from a rod-shaped lamp on a trough-shaped cold mirror, the ultraviolet light (including some of the visible rays and infrared light) is reflected by the trough-shaped cold mirror and by at least one other cold mirror which is preferably plate-shaped. Furthermore, of the light which was emitted from the rod-shaped lamp and which was incident on the other cold mirror(s), the ultraviolet light (including some of the visible rays and infrared light) is reflected by the other cold mirror(s). The light reflected by the other cold mirrors is incident on the plate-shaped heat refraction filter and some of the visible rays are reflected and are incident on a workpiece. The light emitted by the rod-shaped lamp is not directly radiated onto the workpiece via the heat refraction filter.

Abstract: To cement UV radiation-transmitting substrates to one another without deformation and within a short time, and to cement them together with high efficiency without an aluminum film of an information recording layer melting, according to the invention, a device for bonding discs to one another is provided having a radiant light source which irradiates the discs with radiant light which contains ultraviolet radiation at least once in a flash; a wavelength selector which is placed in the optical path between the radiant light source and the discs at a distance from the discs, which transmits the ultraviolet rays and absorbs light in a range of wavelengths which are absorbed by the UV radiation-transmitting substrates of the discs; a cooling device which admits and discharges cooling air between the radiant light source and the wavelength selector.

Abstract: The object of the invention is to provide an ashing method and an asher in order to avoid damage to semiconductor components occurring during ashing of a photoresist resin film by active oxygen plasma and to avoid a long treatment time occurring in an ashing method using a low pressure mercury discharge lamp. According to the invention, this object is achieved by a method and an apparatus for ashing a photoresist resin film. In the method, a wafer provided with a photoresist resin film is placed in an ozone-containing atmosphere. An activated oxygen is produced through the radiation light of a discharge lamp, which emits a continuous spectrum in a wavelength range of 200 to 300 nm. The photoresist resin film is ashed by the activated oxygen.

Abstract: A method for exposing a peripheral part of a wafer according to the present invention is to expose the peripheral part, taking account of a correcting angle determined by calculating the amount of misalignment between a center of a wafer and a rotational center for the wafer from the amount of displacement of a sensor for detecting a peripheral edge. Therefore, any wafer-centering motion and mechanism are not required, and this method is higher in precision of exposing position.

Abstract: A method of treating positive photoresist materials applied on a semiconductor wafer placed on a support, which meets the demand for high-speed treatment and improvement in heat-resistance and plasma-resistance of the developed positive photoresist image. The developed positive photoresist image is exposed to radiant lights including ultraviolet rays in an chamber filled with gas in which oxygen and/or moisture are reduced or not included.

Abstract: Ultraviolet radiation process applies to manufacture semiconductor devices in order to enhance the thermal stability of the developed positive photoresist film on semiconductor wafers.A method, in ultraviolet radiation process, and an apparatus enabling the high-speed and effective treatment of the positive photoresist empolying ultraviolet irradiation by preventing the deformation of the developed positive photoresist image which is caused by the light radiated from a discharge lamp such as high pressure mercury vapor lamp. These method and apparatus employ ultraviolet irradiation, in which ultraviolet rays are applied to the developed positive photoresist image, placed in a chamber filled with gas of lower pressure than 1 atmospheric pressure using a means to intercept or reduce selectively all or part of the wavelengths in the spectral response region of the positive photoresist out of radiant lights obtained from the discharge lamp.

Abstract: Ultraviolet radiation process applies to manufacture to semiconductor devices in order to enhance the thermal stability of the developed positive photoresist film on semiconductor's wafers.A method, in ultraviolet radiation process, and an apparatus enabling the high-speed and effective treatmnent of the positive photoresist employing ultraviolet irradiation by preventing the deformation of the positive photoresist which is caused by the light radiated form the microwave-excited electrodeless discharge lamp. These method and apparatus employ ultraviolet irradiation, in which ultraviolet rays are applied to the developed positive photoresist image placed under lower or pressure than 1 atmospheric pressure, using a means to intercept or reduce selectively all or part of the wavelengths in the spectral response region of the positive photoresist out of radiant lights obtained from the microwave-excited electrodeless discharge lamp.

Abstract: Ultraviolet radiation process applies to manufacture semiconductor devices in order to enhance the thermal stability of the photoresist film on semiconductors wafers.A method of treating photoresist materials applied in order to enhance the thermal stability of the photoresist film on semiconductor wafer employing heating and ultraviolet irradiation, which meets the demand for improvement in heat resistance and plasma resistance of the photoresists. The initial heating temperature of the photoresist is set to be a little higher than the initial flow temperature, and the temperature of the photoresist is raised in proportion as the flow temperature of the photoresist is increased by exposing the photoresist to ultraviolet radiation and/or heating.

Abstract: An ultraviolet radiation method of treating positive photoresist materials to enhance the thermal stability of positive photoresist film on a semiconductor wafer employing heating and ultraviolet irradiation. The process improves the heat-resistance and plasma-resistance of the photoresist image. The initial heating temperature of the photoresist is set to be a little higher than the initial flow temperature of the photoresist, and the temperature of the developed positive photoresist image is raised in proportion as the flow temperature of said photoresist image is increased by exposing the photoresist placed in gas of a lower atmospheric pressure to ultraviolet radiation and/or heating.

Abstract: Ultraviolet radiation process applicable in the manufacture of semiconductor devices to enhance the thermal stability of a photoresist film on a semiconductor wafer.A method, in ultraviolet radiation process, and an apparatus enabling the high-speed and effective treatment of a photoresist pattern employing ultraviolet irradiation by preventing the deformation of the photoresist which is caused by the light radiated from a discharge lamp such as high pressure mercury vapor lamp. This method and apparatus employ ultraviolet irradiation, in which ultraviolet rays are applied to the photoresist pattern, using a means to intercept or reduce selectively all or part of the wavelengths in the spectral response region of the photoresist out of radiant energy obtained from the discharge lamp.

Abstract: Disclosed herein is a process for forming a single crystal silicon layer by heating a wafer, which is made of a single crystal silicon substrate and a starting silicon layer made of amorphous or polycrystalline silicon and provided on the silicon substrate, in accordance with the epitaxial growth technique.

Abstract: A method for heating a semiconductor wafer having a first region to be heated and a second region requiring no heating thereof, which method comprises forming a film over at least one of the first and second regions so as to make the reflectivity of the surface of the first region smaller than the reflectivity of the surface of the second region, and then exposing the semiconductor wafer to a flash of light to heat same. The above method permits selectively heating the region which is required to be heated, and, at the same time, to avoid any overheating of the region where no heating is required. The above heating method is particularly effective for annealing a semiconductor wafer which has a large surface area.

Abstract: A flashlight-radiant apparatus is constructed of a housing defining an object-handling space and an irradiation space located adjacent to the object-handling space, a plurality of flash discharge lamps provided side by side in an upper part of the irradiation space, a gas-discharging member provided in the upper part of the irradiation space for controlling the atmosphere of the housing, and an object-supporting table movable reciprocally between the object-handling space and the irradiation space in the housing and equipped with built-in subsidiary heating. An object, for example, a silicon wafer is preheated on the object-supporting table while the object-supporting table is located in the object-handling space. The flashlight-radiant apparatus has a simple structure, enjoys a high level of handling safety, assures long service life for its flash discharge lamps, and is suitable particularly for annealing semiconductor wafers.

Abstract: A light-radiant heating furnace including a box-shaped container, having a transparent wall portion, adapted to receive an object to be treated, for example, a large-sized semiconductor wafer, a reflector arranged in the proximity of outer surfaces of the transparent wall portion of the container, a space formed between the reflector and the outer surface of the transparent wall portion of the container, tubular lamps provided in the space and an air duct equipped with a cooling fan and arranged in communication with the spacing only. The lamps and their adjacent reflector and container wall can be efficiently cooled by causing cooling air to pass through the air duct and space, thereby avoiding overheating of the lamps and thus prolonging the service lives of the lamps. The reflector may be provided with water conduits through which cooling water flows.

Abstract: Disclosed herein is a plane light source unit comprising a plurality of lamps disposed closely with each other in proximity to a mirror with the longitudinal axes of the lamps extending parallelly in a plane. Each of the lamps comprises an elongated sealed tubular body and a filament formed of alternating non-luminous portions and luminous portions and provided within the tubular body along the longitudinal axis of the tubular body. A radiant heating furnace comprising the above plane light source unit and a cooling system therefor is also disclosed. The plane light source unit and a radiant heating furnace incorporating the same light source unit can irradiate light onto a region of a large area with a uniform irradiation energy density. They are suitable for heat treatment of semiconductor wafers.

Abstract: Disclosed herein is a halogen lamp unit comprising a tubular halogen lamp having at its both ends sealed portions hermetically enclosing their respective conductive members. The halogen lamp is supported by holders at its tubular outer wall portions of the envelope adjacent to the sealed end portions without base shells which cover the sealed portions. The holders are cooled by a water-cooling system. The sealed end portions of the lamp are kept in a bare state, thereby avoiding the degradation of the conductive members due to the oxidation thereof. The sealed end portions may be exposed in air-paths to the cooling wind flowing along the tubular halogen lamp.

Abstract: Disclosed herein are a heater assembly and a method for heat-treating a semiconductor wafer using the same. The heater assembly is formed of a heating device having a ring-shaped portion and a holder combined with the heating device detachably each other. A wafer material such as a semiconductor wafer is held on the holder of the heater assembly. A heat-treatment is effected by heating the wafer material by means of application of light radiated from a light source, which is formed of one or more lamps, while heating or after having heated the circumferential portion of the wafer by the heating device of the heater assembly. Owing to the subsidiary heating of the circumferential portion, the wafer may be heat-treated at substantially the same temperature in its entirety. Thus, the heat-treatment does not develop such large "warping" impairing subsequent treatment and/or treatment of the wafer or "slip lines". The heater assembly may be used successfully and conveniently in effecting uniform heating.