Abstract: An object of the present invention is to improve quality of a group-III nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal represented by the composition formula of InxAlyGa1-x-yN (satisfying 0?x?1, 0?y?1, 0?x+y?1), with a hardness exceeding 22.0 GPa as measured by a nanoindentation method using an indenter with a maximum load applied thereto being within a range of 1 mN or more and 50 mN or less.

Abstract: An object of the present invention is to improve quality of a group-III nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal represented by the composition formula of InxAlyGa1-x-yN (satisfying 0?x?1, 0?y?1, 0?x+y?1), with a hardness exceeding 22.0 GPa as measured by a nanoindentation method using an indenter with a maximum load applied thereto being within a range of 1 mN or more and 50 mN or less.

Abstract: A light emitting device has a light emitting layer having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a reflecting layer provided on a side of one surface of the light emitting layer, which reflects a light emitted from the active layer, a supporting substrate provided on an opposite side of the reflecting layer with respect to the light emitting layer, which supports the light emitting layer via an adhesion layer, an ohmic contact portion provided on a part of the reflecting layer, which electrically connects between the reflecting layer and the light emitting layer, and convexo-concave portions formed on other surface of the light emitting layer and side surfaces of the light emitting layer, respectively, and an insulating film configured to cover the convexo-concave portions.

Abstract: A light emitting device has a light emitting layer having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a reflecting layer provided on a side of one surface of the light emitting layer, which reflects a light emitted from the active layer, a supporting substrate provided on an opposite side of the reflecting layer with respect to the light emitting layer, which supports the light emitting layer via an adhesion layer, an ohmic contact portion provided on a part of the reflecting layer, which electrically connects between the reflecting layer and the light emitting layer, and convexo-concave portions formed on other surface of the light emitting layer and side surfaces of the light emitting layer, respectively, and an insulating film configured to cover the convexo-concave portions.